Abstract:
PURPOSE: A method for manufacturing a flexible optical device for skin therapy, and a flexible optical device manufactured by the same are provided to allow the flexible optical device to be adhered to skin. CONSTITUTION: A flexible optical device for skin therapy comprises a flexible substrate(500) and an LED element which is formed on the flexible substrate. The flexible substrate and LED element touch skin to be treated. The LED element is GaN LED element or a GaAs LED element. A method for manufacturing a flexible optical device for skin therapy comprises a step of separating the LED element from a sacrificial substrate and a step of transcribing the separated LED element to a plastic substrate.
Abstract:
PURPOSE: A manufacturing method for a GaN(gallium nitride) LED array device for an optogenetics and the GaN LED array device manufactured thereby are provided to easily clarify a nerve circuit by allowing on-off stimulation of a nerve cell through an LED array which independently becomes on/off. CONSTITUTION: A bonding layer(501) is coated on a plastic substrate(500). A first passivation layer(310) is laminated on the bonding layer. A second passivation layer(320) is laminated on the first passivation layer. A third passivation layer(330) is laminated on the second passivation layer. A first contact line(502) is connected to a contact metal on an n-GaN layer. A second metal line(503) is connected to a contact metal on a p-GaN layer.
Abstract:
An instrument for having fun with interactive shadows is provided to commercialize a traditional shadow play with digital concept and to add moving images and sound effects to a new instrument of play while keeping the basic frame of the traditional play. A fun instrument with interactive shadow comprises: a body(100) which is in a form of hemisphere being vacant inside, of which flat disc screen(10) is upward, and a convex point on the hemisphere lies on the floor, and the surface(20) lying on the floor has a pad to balance, and plural hand holes(40) are formed along with the circumference of the hemisphere; a sensor(30) for sensing a movement of hands coming in through the hand holes; a light emitting device(50) for emitting different lights according to the hand movements; a sound device(70) for creating sound effects based on the hand position.
Abstract:
유연성 질화갈륨 발광다이오드 소자 제조방법 및 이에 따라 제조된 유연성 질화갈륨 발광다이오드 소자가 제공된다. 본 발명에 따른 유연성 질화갈륨 발광다이오드 소자 제조방법은 희생기판 상에 질화갈륨 발광다이오드 소자를 제조하는 단계; 상기 희생기판으로부터 상기 질화갈륨 발광다이오드 소자를 화학적으로 분리하는 단계를 포함하며, 여기에서 상기 화학적 분리는 상기 희생기판과 질화갈륨 발광다이오드 소자 사이의 희생층을 화학적으로 제거하는 방식으로 진행되는 것을 특징으로 하며, 본 발명에 따른 유연성의 GaN LED 소자는 구 형태의 두개골이나 두개골 뼈 바로 아래에 위치하는 주름진 대뇌피질(인지, 사고, 언어, 기억 등의 역할, 특히 파킨슨 병은 표면에 위치하는 신경세포에 의한 증상) 등과 같이 구불구불한 표면의 인체 내에 이식가능하다. 또한 복수 개로 구성되며, 각각이 독립적으로 온/오프되는 LED 어레이를 통해 여러 부위에 신경세포의 빛 온-오프 자극이 가능하므로 신경 회로의 규명이 용이해진다.
Abstract:
PURPOSE: A method for manufacturing a GaN LED device and a GaN LED device manufactured by the same are provided to easily verify a nerve circuit by using an LED array. CONSTITUTION: A gallium nitride light emitting diode element is formed on a sacrificial substrate(100). A gallium nitride light emitting diode element is chemically separated from the sacrificial substrate. A silicon oxide layer(200) is laminated on the sacrificial substrate. A patterning process is performed on the silicon oxide layer. A first gallium nitride film(201a) is grown up in a space between silicon oxide layers.
Abstract:
광역학 치료용 광소자가 제공된다. 본 발명에 따른 광역학 치료용 광소자는플렉서블 기판; 및 상기 플렉서블 기판 상에 형성된 LED 소자를 포함하며, 여기에서 상기 플렉서블 기판 및 LED 소자는 인체 내로 삽입된 후, 인체 기관에 빛을 조사하는 것을 특징으로 하며, 본 발명에 따른 플렉서블 광소자는 생체친화적인 플렉서블LED소자를 이용하여 광원을 광역학 치료 대상이 되는 조직에 직접 조사할 수 있다. 특히 평면이 아닌 조직에도 본 발명에 따른 플렉서블 광소자는 효과적으로 접착되며, 이로써 주변 조직에 대한 물리적인 손상을 줄일 수 있다. 아울러, 얇은 기판 두께에 따라 작은 공간에서도 활용가능하며, 무거운 무게로 인한 생체 손상을 방지할 수 있다. 더 나아가, 저전력으로도 효과적인 광역학 치료가 가능하다.
Abstract:
PURPOSE: A flexible gallium nitride light-emitting diode element production method and a flexible gallium nitride light-emitting diode element produced thereby are provided to facilitate an establishment of neural circuit as light on-and-off stimulation of the neural circuit is enabled in various parts through an LED array which is turned on and off independently. CONSTITUTION: A gallium nitride light-emitting diode unit element is equipped on a substrate (100) and contains an n-gallium nitride layer (202) laminated in an order, a light-emitting layer (203), and a p-gallium nitride layer. A metal contact is laminated on the n-gallium nitride layer and a p-gallium nitride layer of the gallium nitride light-emitting diode unit element. A first metal line and a second metal line connect the metal contact laminated on the n-gallium nitride layer and the p-gallium nitride layer of the gallium nitride light-emitting diode unit element. The metal contact is laminated on the first metal line and the second metal line.
Abstract:
PURPOSE: A flexible optical device is provided to be manufactured according to the flexible fabrication method of optical chip for the photo dynamic therapy is effectively inserted into the inside human body or the outside and it is easily used for the disease treating including the cancer etc. CONSTITUTION: An optical device for the photo dynamic therapy comprises flexible printed circuit board and the LED element formed on the flexible printed circuit board. After the flexible printed circuit board and LED element are inserted within the human body light is irradiated in the human organ. The light-emitting layer of the LED element is changed according to the photosensitizer kind for the photo dynamic therapy. The LED element is the GaN LED element or the GaAs LED element. A fabrication method of optical chip for the photo dynamic therapy comprises the steps of: a step of separating to the sacrificial substrate the LED element manufactured on the sacrificial substrate; a step transcribing the above-mentioned separated LED element to the plastic substrate.
Abstract:
PURPOSE: A GaN LED device for optogenetics is provided to be used in a narrow space by controlling a size and reducing a weight. CONSTITUTION: A plurality of GaN LED unit device arrays are laminated on a plastic substrate(500). A contact line is connected to a plurality of GaN LED unit devices. A passivation layer(330) is laminated on the plurality of GaN LED unit devices. A part of the contact line is exposed to the outside through the passivation layer. The GaN LED unit device array for the optogenetics generates blue light of a wavelength band less than 470 nm and activates protein.