公开(公告)号：KR1020130055813A

公开(公告)日：2013-05-29

申请号：KR1020110121435

申请日：2011-11-21

Applicant: 한국과학기술원

Inventor： 정희태 ,  전환진 ,  정현수

IPC: B82B3/00 ,  B82B1/00 ,  B82Y40/00

CPC classification number: B81C1/00111 ,  B82Y40/00

Abstract: PURPOSE: A manufacturing method of a three dimensional multicomponent nanostructure is provided to obtain high aspect ratio and uniformity by simple processes by applying an ion bombardment phenomenon through a physical ion etching. CONSTITUTION: A manufacturing method of a three dimensional multicomponent nanostructure comprises a step of forming a first target material layer(120) and a first polymer layer(130) in order on a substrate(110); a step of forming a first polymer structure by conducting a lithography process on the first polymer layer; a step of ion etching the first target material layer and forming a first target material-polymer composite structure on a substrate; a step of obtaining a first nanostructure(200) by removing a first polymer of the first target material-polymer layer; a step of forming a second polymer layer on the first nanostructure and forming a second polymer structure patternized by conducting a lithography process; a step of forming a second target material layer(160) in the second polymer structure; a step of forming a second target material-polymer composite structure on a substrate by ion etching the whole second target material layer; a step of forming a second nanostructure(250) by removing the second polymer; and a step of repeating the previous steps to manufacture the three dimensional multicomponent nanostructure.

Abstract translation: 目的：提供三维多组分纳米结构的制造方法，通过物理离子蚀刻施加离子轰击现象，通过简单的工艺获得高纵横比和均匀性。 构成：三维多组分纳米结构的制造方法包括在衬底（110）上依次形成第一靶材料层（120）和第一聚合物层（130）的步骤; 通过在第一聚合物层上进行光刻工艺来形成第一聚合物结构的步骤; 离子蚀刻第一靶材料层并在基板上形成第一靶材料 - 聚合物复合结构的步骤; 通过去除第一目标材料 - 聚合物层的第一聚合物获得第一纳米结构（200）的步骤; 在第一纳米结构上形成第二聚合物层并形成通过进行光刻工艺图案化的第二聚合物结构的步骤; 在第二聚合物结构中形成第二靶材料层（160）的步骤; 通过离子蚀刻整个第二靶材料层在基板上形成第二目标材料 - 聚合物复合结构的步骤; 通过除去第二聚合物形成第二纳米结构（250）的步骤; 以及重复前述步骤以制造三维多组分纳米结构的步骤。

公开(公告)号：KR1020120001694A

公开(公告)日：2012-01-04

申请号：KR1020110064090

申请日：2011-06-29

Applicant: 한국과학기술원

Inventor： 정희태 ,  전환진 ,  김경환 ,  백연경

IPC: B82B3/00 ,  B82B1/00 ,  B82Y40/00

CPC classification number: B22F7/04 ,  B81C1/00031 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C03C17/006 ,  C03C2217/42 ,  C03C2218/34 ,  C23C14/221 ,  G03F7/0002 ,  G03F7/0037 ,  Y10T428/24479 ,  Y10T428/24612

Abstract: PURPOSE: A three dimensional nano-structure and a method for manufacturing the same are provided to improve the aspect ratio and the uniformity of the three dimensional nano-structure based on an ion bombardment phenomenon. CONSTITUTION: An object material layer(120) and a polymer layer(130) are successively formed on a substrate(110). A pattered polymer structure(135) is formed in the polymer layer through a lithography process. The object material layer is ion-etched to form an object material-polymer complex structure. Ion etched objected materials(125) are attached on the outer circumference of the polymer structure in the object material-polymer complex structure. The object material-polymer complex structure is eliminated.

Abstract translation: 目的：提供三维纳米结构及其制造方法，以改善基于离子轰击现象的三维纳米结构的纵横比和均匀性。 构成：在基板（110）上依次形成物体层（120）和聚合物层（130）。 通过光刻工艺在聚合物层中形成图案化聚合物结构（135）。 对象材料层被离子蚀刻以形成目标材料 - 聚合物复合结构。 离子蚀刻的被摄体材料（125）以目标材料 - 聚合物复合结构附着在聚合物结构的外圆周上。 消除了目标材料 - 聚合物复合结构。