-
-
公开(公告)号：KR1019970006614B1
公开(公告)日：1997-04-29
申请号：KR1019930027025
申请日：1993-12-09
IPC: H01L33/00
Abstract: A method of fabricating an avalanche photodiode for optical communications includes a step (a) of growing an n-InP buffer layer 2, In0.53Ga0.47As absorption layer 3 having a remaining impurity concentration of below 5X1015cm-3 and thickness of 1.5-3 m, undoped InGaAsP grading layer 8 in which the total thickness of layers having different bandgaps is 0.03-0.1 m, and n-InP charge sheet layer 9 having a doping concentration of 1-5X1017cm-3 and thickness of 0.1-0.2 m on an n+ InP substrate, to form a wafer, a step (b) of forming a charge plate layer 10 by dry or wet etching process using a dielectric material and photoresist, a step (c) of forming an n-- InP multiplication layer 11 having a doping concentration of below 5X1017cm-3 and thickness of 0.2-0.7 m and p+ InP layer 12 having a doping concentration of 2X1018cm-3 and thickness of 0.5-2 m using LPE on the charge plate layer 10, a step (d) of performing mesa etching using a dielectric material and photoresist, a step (e) of forming passivation layer and isolation layer using a polyimide 13, a step (f) of forming an anti-reflection layer 14 of SiNx, forming an opening for depositing a resistant metal on a predetermined portion of the p-InP layer 12 and depositing a p-metal 16, and a step (g) of carrying out lapping and depositing an n-metal 16.
Abstract translation: 制造用于光通信的雪崩光电二极管的方法包括：生长n-InP缓冲层2，剩余杂质浓度低于5×1015cm-3的In0.53Ga0.47As吸收层3和厚度为1.5-3的步骤（a） m，未掺杂的InGaAsP分级层8，其中具有不同带隙的层的总厚度为0.03-0.1μm，以及掺杂浓度为1-5×10 17 cm -3的n-InP电荷层9和厚度为0.1-0.2μm， n + InP衬底，以形成晶片;使用电介质材料和光致抗蚀剂通过干蚀刻或湿法蚀刻工艺形成电荷层10的步骤（b）;形成n-InP倍增层11的步骤（c） 掺杂浓度低于5X1017cm-3，厚度为0.2-0.7μm，p + InP层12的掺杂浓度为2×1018cm-3，厚度为0.5-2μm，使用LPE在电荷层10上，步骤（d） 使用介电材料和光致抗蚀剂进行台面蚀刻，形成p的步骤（e） 使用聚酰亚胺13的绝缘层和隔离层，形成SiNx的抗反射层14的步骤（f），在p-InP层12的预定部分上形成用于沉积耐金属的开口， 金属16，以及进行研磨和沉积n金属16的步骤（g）。
-
公开(公告)号：KR1019970006612B1
公开(公告)日：1997-04-29
申请号：KR1019930026785
申请日：1993-12-08
IPC: H01L33/00
Abstract: A light receiving device for optical communication is described that can improve the ability for receiving detection at a high speed operation and overcome the limit due to the resistance resulting from an ohmic contact. The light receiving device includes an n--InGaAs light absorbing layer 22 formed on an n+-InP substrate 21, an n--InP window layer 25 formed on the light absorbing layer 22, an n--InGaAs ohmic contact layer 26 formed on the n--InP window layer 25, an n--InP surface layer 27 and a p-n junction. The pn junction is formed when a p-type material diffusion layer 28 is diffused from a p+-InP surface layer 31 to the window layer 25. The p+-InP surface layer 31 is selectively etched so that a p-type metal electrode 16 contacts to a p+-InGaAs ohmic contact layer 30. The surface of the p-n junction has a part B exposed to InP which has a bigger band gap than InGaAs. Thereby, it is possible to improve the performance of the device and reliability and yield thereof.
Abstract translation: 描述了用于光通信的光接收装置，其可以提高在高速操作下接收检测的能力，并克服由于欧姆接触引起的电阻的极限。 光接收装置包括形成在n + InP衬底21上的n-InGaAs光吸收层22，形成在光吸收层22上的n-InP窗口层25，形成在n + InP衬底21上的n-InGaAs欧姆接触层26 n-InP窗口层25，n-InP表面层27和pn结。 当p型材料扩散层28从p + -InP表面层31扩散到窗口层25时，形成pn结。对p + -InP表面层31进行选择性蚀刻，使p型金属电极16接触 到p + -InGaAs欧姆接触层30.pn结的表面具有暴露于InP的部分B，其具有比InGaAs更大的带隙。 由此，可以提高装置的性能，可靠性和收率。
-
公开(公告)号：KR1019960014732B1
公开(公告)日：1996-10-19
申请号：KR1019920025018
申请日：1992-12-22
IPC: H01S5/20
CPC classification number: H01S5/22 , H01S5/0425 , H01S5/12 , H01S5/2081
Abstract: an active layer(32) of a strained quantum well structure and a waveguide layer(33) formed on an InP substrate(31); a p-electrode metal stripe(38) having a width of "r" formed on a ridge comprising a cladding layer(34) and an ohmic contact layer(35); and a dielectric material(39) having an ohmic contact window stripe of "w" where, "w" is smaller than "r", and a p-side bonding pad metal(40) formed on the p-electrode metal stripe(38) in sequence.
Abstract translation: 应变量子阱结构的有源层（32）和形成在InP衬底（31）上的波导层（33）; 在包括覆层（34）和欧姆接触层（35）的脊上形成宽度“r”的p电极金属条（38）; 以及电介质材料（39），其中“w”小于“r”的欧姆接触窗条“w”，以及形成在p电极金属条（38）上的p侧接合焊盘金属 ） 按顺序。
-
Patent Agency Ranking25.发明授权
公开(公告)号：KR1019960001467B1
公开(公告)日：1996-01-30
申请号：KR1019920025002
申请日：1992-12-22
IPC: H01L31/00
CPC classification number: B82Y20/00 , H01L31/035236 , H01L31/1075
Abstract: n+ type InP epitaxial layer formed as a buffer layer on a substrate and n+ type InP substrate; n type In1-xAlxAs layer formed on the epitaxial layer; n+ type In1-xAlxAs layer formed on the In1-xAlxAs layer; an amplifying layer having superlattice structure; p type In1-xAlxAs layer formed on the amplifying layer in the usual order; an absorbing layer; p type InP layer for diminishing the surface leakage current In0.53Ga0.47As layer for ohmic contact.
Abstract translation: n +型InP外延层，形成为衬底和n +型InP衬底上的缓冲层; n型In1-xAlxAs层，形成在外延层上; 在In1-xAlxAs层上形成n +型In1-xAlxAs层; 具有超晶格结构的放大层; p型In1-xAlxAs层以常规顺序形成在放大层上; 吸收层; p型InP层，用于减小表面漏电流In0.53Ga0.47As的欧姆接触层。
-
公开(公告)号：KR1019960001191B1
公开(公告)日：1996-01-19
申请号：KR1019930012201
申请日：1993-06-30
IPC: H01L31/107
Abstract: forming a buffer layer, an absorbing layer, and the first grading layer sequentially; forming the second grading layer by doping some parts of the grading layer; growing a charge sheet carrier layer in some thickness; forming a pattern by etching selectively the charge sheet layer; and growing an amplifying layer on the grading layer and forming a p+-n junction by diffusion method.
Abstract translation: 依次形成缓冲层，吸收层和第一分级层; 通过掺杂分级层的一些部分形成第二分级层; 生长一定厚度的电荷载体层; 通过选择性地蚀刻所述电荷薄片层来形成图案; 并在分级层上生长放大层，并通过扩散法形成p + -n结。
-
公开(公告)号：KR1019950021819A
公开(公告)日：1995-07-26
申请号：KR1019930026785
申请日：1993-12-08
IPC: H01L33/00
Abstract: 본 발명은 고속광통신용 수광소자에 관한 것으로서, 종래에 p
- 금속전극과 P
+ -lnP사이의 음접촉저항이 커서 소자의 면적을 줄이기 어렵고 고속동작에서 수신감도를 저하시키는 문제점을 해결하기 위하여 본 발명에서는 평면형 APD와 PIN수광소자의 제작에 있어 p
+ -InP 윈도우층위에 p-InGaAs층과 p-InP층을 형성하여 p-금속전극을 p-InGaAs층에 접합하도록 하여 음접촉저항을 적게하는 동시에 p-InP층으로 p-InGaAs층을 보호하여 표면누설 전류를 감소시키도록 함으로써, 수광소자의 저항을 감소시켜 고속동작시 성능향사응 기하고, 음접촉저항 성능의 향상으로 소자의 크기를 작게 할 수 있어 수광소자의 정전용량을 향상시켜 고속동작 특성을 향상시키고, 공정의 안정화를 통해 신뢰도와 수율을 향상시킬 수 있다.-
公开(公告)号：KR1019950021813A
公开(公告)日：1995-07-26
申请号：KR1019930027025
申请日：1993-12-09
IPC: H01L33/00
Abstract: 본 발명은 광통신용 애벌렌치 포토다이오드 재조방법에 관한 것으로서, 차아지 플레이트층(10)을 형성한 후, 증폭층의 재성장이 요구되는 SAGCM-APD에서 LPE 성장법으로 재성장하여 평탄화를 쉽게 제어하고, LPE 성장시 p-InP(12)를 증폭층(11)위에 성장함으로써 확산공정을 제거하여 APD공정의 난점중 하나인 증폭층의 두께를 쉽게 제어하는 것으로서 구성됨으로써 LPE재성장시 pn 접합을 형성함으로써 평탄화가 쉽게 이루어져 있으므로, 기술적으로 경제적이며, 증폭층 두께를 쉽게 조절함으로써 APD 특성을 나타내는 이득 대역폭을 향상시킬 수 있다.
-
-
-
-
-
-
-
-
Search Results
29
records
(took 0.02 seconds)
