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公开(公告)号：KR1020130113201A
公开(公告)日：2013-10-15
申请号：KR1020120035595
申请日：2012-04-05
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C23C28/34 , C01B32/186 , C01B2204/04 , C23C16/44
Abstract: PURPOSE: A metal corrosion prevention system is provided to prevent the corrosion of metal as highly corrosive metal ions cannot be distributed inside a metal layer such as an electrode, thereby preventing the corrosion of the metal. CONSTITUTION: A metal corrosion prevention system includes a solution including first metal ions, a metal layer, and a graphene layer. The metal layer includes a second metal partially dipped into the solution. The graphene layer is formed on the metal layer and formed with a chemical vapor deposition method. The first metal has a reducing power larger than that of the second metal. [Reference numerals] (AA) Voltage vs. Li/Li; (BB) Discharge; (CC) Charge; (DD) Capacity (μAh/cm^2)
Abstract translation: 目的：提供金属腐蚀防止系统，以防止金属腐蚀，因为高度腐蚀性的金属离子不能分布在诸如电极的金属层内，从而防止金属的腐蚀。 构成：金属腐蚀防止系统包括包含第一金属离子，金属层和石墨烯层的溶液。 金属层包括部分浸入溶液中的第二金属。 在金属层上形成石墨烯层，并用化学气相沉积法形成。 第一金属具有比第二金属更大的还原力。 （标号）（AA）电压对Li / Li; （BB）放电; （CC）费用; （DD）容量（μAh/ cm ^ 2）
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公开(公告)号：KR1020110138195A
公开(公告)日：2011-12-26
申请号：KR1020110059746
申请日：2011-06-20
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: C01B31/02 , B82B1/00 , H01L21/328 , H01L51/50
CPC classification number: H01L29/778 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/28255 , H01L29/1606 , H01L29/4908 , H01L29/7317 , H01L29/7613 , H01L29/78684 , Y10T428/30 , C01B32/182 , C01B2204/02
Abstract: PURPOSE: An alkali metal containing monolayer graphene and an electronic device including the same are provided to maintain the inherent characteristic of the graphene by forming high band gap in the graphene through the localization of charges based on non-chemical bonds. CONSTITUTION: Alkali metals are prepared by being selected from lithium, sodium, potassium, rubidium, cesium, and francium. The alkali metals are placed on at least one surface of a monolayer graphene. The alkali metals are in second dimensional thin film structure. About 30-99% of the entire surface area of the monolayer graphene is occupied by the alkali metals. The band gap of the monolayer graphene is more than or equal to 0.4eV. The area of the monolayer graphene is more than or equal to 1cm^2.
Abstract translation: 目的：提供含有碱金属的单层石墨烯及其电子装置，以通过基于非化学键的电荷定位在石墨烯中形成高带隙来维持石墨烯的固有特性。 构成：碱金属是通过选自锂，钠，钾，铷，铯和are制成的。 碱金属被放置在单层石墨烯的至少一个表面上。 碱金属处于二维薄膜结构中。 单层石墨烯的整个表面积的约30-99％被碱金属占据。 单层石墨烯的带隙大于或等于0.4eV。 单层石墨烯的面积大于或等于1cm ^ 2。
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公开(公告)号：KR1020110074357A
公开(公告)日：2011-06-30
申请号：KR1020090131294
申请日：2009-12-24
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L21/84
Abstract: PURPOSE: A method of forming an oxide film is provided to remove an SiOC film between an SiC substrate and an SiO2 oxide film by projecting beam on an SiO2 oxide film after forming the SiO2 oxide. CONSTITUTION: In a method of forming an oxide film, an SiC substrate(110) is prepared. An SiO2 oxide film(120) is formed on the SiC substrate. The SiO2 oxide film is formed through thermal oxidation method using water and oxygen. The SiOC film(130) is formed between the SiC substrate and the SiO2 oxide film. An electron beam is researched on the SiO2 oxide film.
Abstract translation: 目的：提供形成氧化膜的方法，以在形成SiO 2氧化物之后，通过在SiO 2氧化物膜上投射光束来除去SiC衬底和SiO 2氧化物膜之间的SiOC膜。 构成：在形成氧化膜的方法中，制备SiC衬底（110）。 在SiC衬底上形成SiO 2氧化物膜（120）。 通过使用水和氧的热氧化法形成SiO 2氧化物膜。 在SiC衬底和SiO 2氧化物膜之间形成SiOC膜（130）。 研究了SiO2氧化膜的电子束。
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24.发明公开
公开(公告)号：KR1020090128708A
公开(公告)日：2009-12-16
申请号：KR1020080054588
申请日：2008-06-11
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L51/002 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/15 , G01N21/65 , H01L51/0048 , H01L51/0049
Abstract: PURPOSE: A carbon nanotube, a device containing the carbon nanotube, and a method for controlling the optical inter-band transition of the carbon nanotube are provided to improve the sensitivity and selectivity (purity) of a device. CONSTITUTION: A carbon nanotube is a p-doped carbon nanotube, wherein the carbon nanotube shows the optical inter-band transition in the VIS-NIR range, and only one optical inter-band transition appears at the corresponding p-doped state of the carbon nanotube. The carbon nanotube is p-doped by using an oxidant having a reduction potential of 0.8eV or more based on a standard hydrogen electrode. The carbon nanotube is p-doped by using an oxidant which is a metal salt or a nitronium compound.
Abstract translation: 目的：提供碳纳米管，含有碳纳米管的装置以及控制碳纳米管的光学带间转变的方法，以提高装置的灵敏度和选择性（纯度）。 构成：碳纳米管是p掺杂的碳纳米管，其中碳纳米管显示VIS-NIR范围内的光学带间转变，并且在碳的相应p掺杂状态下仅出现一个光学带间转变 纳米管。 通过使用基于标准氢电极的还原电位为0.8eV以上的氧化剂，对碳纳米管进行p掺杂。 通过使用作为金属盐或硝鎓化合物的氧化剂对碳纳米管进行p掺杂。
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公开(公告)号：KR100931962B1
公开(公告)日：2009-12-15
申请号：KR1020070072673
申请日：2007-07-20
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: B82Y40/00 , B82Y10/00 , B82Y30/00 , C01B32/168 , H01L51/0048
Abstract: 환원제를 이용하여 전자가 주입된 탄소 나노튜브(CNT)를 제조하는 방법과 이러한 방법을 통하여 제조된 탄소 나노튜브 및 그를 포함하는 전기 소자를 개시한다. 환원제를 이용하여 전자가 주입된 탄소 나노튜브는 환원제 처리 조건을 변화시킴으로써 탄소 나노튜브의 도핑 정도와 띠 간격 등의 전자적 특성을 광범위하고 용이하게 조절할 수 있는 특징이 있다.
탈도핑, 탄소 나노튜브, 환원제Abstract translation: 本发明公开了用于根据所述方法制造具有用还原剂处理的电子的碳纳米管（CNT）的制造方法，以及根据该方法制造的CNT和包含该CNT的电子器件的方法。 通过改变还原剂的处理条件，可以广泛且容易地调整电子注入其中的CNT的掺杂水平和带隙等电子特性。
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Patent Agency Ranking
公开(公告)号：KR1020090119823A
公开(公告)日：2009-11-20
申请号：KR1020090107171
申请日：2009-11-06
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: B82B1/00 , B82B3/00 , B82Y15/00 , H01L29/775
Abstract: PURPOSE: A method for producing carbon nano tube by injecting an electron into a nano tube which is doped with p-type is provided. CONSTITUTION: A method for producing CNT(carbon nano tube) composition in which an electron is injected comprises: a step of reacting the CNT with a reductant to obtain the CNT in which an electron with more than 1 of S11/S22 optical extinction ratio is injected; a step of centrifuging the CNT from the reacted mixture. The reductant is selected from metal hydride, organic reduction solvent or hydrogen gas.
Abstract translation: 目的：提供一种通过向掺杂有p型的纳米管注入电子来生产碳纳米管的方法。 构成：其中注入电子的CNT（碳纳米管）组合物的制造方法包括：使CNT与还原剂反应的步骤，得到其中S11 / S22光消光比大于1的电子为 注射; 从反应混合物中离心CNT的步骤。 还原剂选自金属氢化物，有机还原溶剂或氢气。
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公开(公告)号：KR1020090011540A
公开(公告)日：2009-02-02
申请号：KR1020070075211
申请日：2007-07-26
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L31/022466 , B82Y20/00 , G02B2207/101
Abstract: A manufacturing method of a CNT thin film processed by a chemical substance having a functional group receiving electronics is provided to decrease a constant resistance between CNTs and to improve a conductivity of an electrode including a CNT thin film. A manufacturing method of a CNT thin film comprises steps of: preparing a CNT; processing the CNT with a chemical substance having a functional group receiving electronics; preparing a CNT dispersed solution by mixing the CNT processed by the chemical substance with a dispersing agent or a dispersion solvent; and forming the CNT thin film by using the CNT dispersed solution. A number of functional groups of the chemical substance having a functional group receiving the electronics is one or greater.
Abstract translation: 提供由具有官能团接收电子器件的化学物质处理的CNT薄膜的制造方法，以减小CNT之间的恒定电阻并提高包括CNT薄膜的电极的导电性。 CNT薄膜的制造方法包括以下步骤：制备CNT; 用具有接收电子学功能的化学物质处理CNT; 通过将由化学物质处理的CNT与分散剂或分散溶剂混合来制备CNT分散溶液; 并使用CNT分散溶液形成CNT薄膜。 具有接收电子器件的官能团的化学物质的许多官能团是一个或多个。
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