公开(公告)号：US20220196581A1

公开(公告)日：2022-06-23

申请号：US17559950

申请日：2021-12-22

Applicant: ASML Netherlands B.V.

Inventor： Marco Jan-Jaco WIELAND ,  Albertus Victor Gerardus MANGNUS

IPC: G01N23/2251 ,  H01J37/244 ,  H01J37/10 ,  G01N23/203

Abstract: The embodiments of the present disclosure provide various techniques for detecting backscatter charged particles, including accelerating charged particle sub-beams along sub-beam paths to a sample, repelling secondary charged particles from detector arrays, and providing devices and detectors which can switch between modes for primarily detecting charged particles and modes for primarily detecting secondary particles.

公开(公告)号：US20220148842A1

公开(公告)日：2022-05-12

申请号：US17430307

申请日：2020-02-04

Applicant: ASML Netherlands B.V.

Inventor： Shakeeb Bin HASAN ,  Yan REN ,  Maikel Robert GOOSEN ,  Albertus Victor Gerardus MANGNUS ,  Erwin Paul SMAKMAN

IPC: H01J37/04

Abstract: Disclosed among other aspects is a charged particle inspection system including an absorbing component and a programmable charged-particle mirror plate arranged to modify the energy distribution of electrons in a beam and shape the beam to reduce the energy spread of the electrons and aberrations of the beam, with the absorbing component including a set of absorbing structures configured as absorbing structures provided on a transparent conductive layer and a method using such an absorbing component and with the programmable charged-particle mirror plate including a set of pixels configured to generate a customized electric field to shape the beam and using such a programmable charged-particle mirror plate.

公开(公告)号：US20210055660A1

公开(公告)日：2021-02-25

申请号：US16977503

申请日：2019-02-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexey Olegovich POLYAKOV ,  Erwin Paul SMAKMAN ,  Andrey NIKIPELOV ,  Albertus Victor Gerardus MANGNUS

IPC: G03F7/20 ,  G01N23/2251 ,  H01L21/67

Abstract: An inspection system that include a selective deposition tool configured to receive a sample and selectively deposit a material onto the sample, an inspection tool configured to perform an inspection process on the sample provided with the deposited material, and an enclosure configured to enclose the selective deposition tool and the inspection tool.

公开(公告)号：US20200312619A1

公开(公告)日：2020-10-01

申请号：US16830204

申请日：2020-03-25

Applicant: ASML Netherlands B.V.

Inventor： Albertus Victor Gerardus MANGNUS ,  Maikel Robert GOOSEN ,  Erwin Paul SMAKMAN

IPC: H01J37/317 ,  H01J37/244 ,  H01J37/24 ,  H01J37/304

Abstract: Systems and methods of measuring beam current in a multi-beam apparatus are disclosed. The multi-beam apparatus may include a charged-particle source configured to generate a primary charged-particle beam, and an aperture array. The aperture array may comprise a plurality of apertures configured to form a plurality of beamlets from the primary charged-particle beam, and a detector including circuitry to detect a current of at least a portion of the primary charged-particle beam irradiating the aperture array. The method of measuring beam current may include irradiating the primary charged-particle beam on the aperture array and detecting an electric current of at least a portion of the primary charged-particle beam.

公开(公告)号：US20200249181A1

公开(公告)日：2020-08-06

申请号：US16652231

申请日：2018-10-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Erwin Paul SMAKMAN ,  Albertus Victor Gerardus MANGNUS ,  Thomas Jarik HUISMAN

IPC: G01N23/2251 ,  G01B15/00 ,  H01J37/065 ,  H01J37/073 ,  H01J37/22 ,  H01J37/28 ,  G03F7/20

Abstract: An inspection method for a substrate, the inspection method including: providing an electron beam having a first polarization state to a sample of the semiconductor substrate; detecting a first response signal of the sample caused by interaction of the electron beam having the first polarization state with the sample; providing an electron beam having a second polarization state to the sample of the semiconductor substrate; detecting a second response signal of the sample caused by interaction of the electron beam having the second polarization state with the sample; and determining a geometric or material property of the sample, based on the first response signal and the second response signal.