公开(公告)号：US20220293389A1

公开(公告)日：2022-09-15

申请号：US17636344

申请日：2020-08-15

Applicant: ASML Netherlands B.V.

Inventor： Thomas Jarik HUISMAN ,  Shakeeb Bin HASAN

IPC: H01J37/22 ,  H01J37/28 ,  G06T5/00

Abstract: Systems and methods for image enhancement are disclosed. A method for enhancing an image may include acquiring a scanning electron microscopy (SEM) image. The method may also include simulating diffused charge associated with a position of the SEM image. The method may further include providing an enhanced SEM image based on the SEM image and the diffused charge.

公开(公告)号：US20230021320A1

公开(公告)日：2023-01-26

申请号：US17957997

申请日：2022-09-30

Applicant: ASML Netherlands B.V.

Inventor： Maxim PISARENCO ,  Scott Anderson MIDDLEBROOKS ,  Thomas Jarik HUISMAN

IPC: G06T5/50 ,  G03F7/20 ,  G06T5/00 ,  G06T7/00 ,  H01J37/22

Abstract: An inspection tool comprises an imaging system configured to image a portion of a semiconductor substrate. The inspection tool may further comprise an image analysis system configured to obtain an image of a structure on the semiconductor substrate from the imaging system, encode the image of the structure into a latent space thereby forming a first encoding. the image analysis system may subtract an artifact vector, representative of an artifact in the image, from the encoding thereby forming a second encoding; and decode the second encoding to obtain a decoded image.

公开(公告)号：US20250003899A1

公开(公告)日：2025-01-02

申请号：US18708929

申请日：2022-10-14

Applicant: ASML Netherlands B.V.

Inventor： Tim HOUBEN ,  Maxim PISARENCO ,  Thomas Jarik HUISMAN ,  Lingling PU ,  Jian ZHOU ,  Liangjiang YU ,  Yi-Hsin CHANG ,  Yun-Ling YEH

IPC: G01N23/2251 ,  G06T7/00

Abstract: Systems and methods for image analysis include obtaining a plurality of simulation images and a plurality of non-simulation images both associated with a sample under inspection, at least one of the plurality of simulation images being a simulation image of a location on the sample not imaged by any of the plurality of non-simulation images; and training an unsupervised domain adaptation technique using the plurality of simulation images and the plurality of non-simulation images as inputs to reduce a difference between first intensity gradients of the plurality of simulation images and second intensity gradients of the plurality of non-simulation images.

公开(公告)号：US20250166960A1

公开(公告)日：2025-05-22

申请号：US18829231

申请日：2024-09-09

Applicant: ASML Netherlands B.V.

Inventor： Wei FANG ,  Lingling PU ,  Thomas Jarik HUISMAN ,  Erwin Paul SMAKMAN

IPC: H01J37/22 ,  G02B21/00 ,  G02B21/36 ,  G06N20/00 ,  G06T5/50 ,  G06T7/00 ,  G06V10/44 ,  G06V10/82 ,  G06V20/69

Abstract: Systems and methods for image enhancement are disclosed. A method for enhancing an image may include acquiring a first scanning electron microscopy (SEM) image at a first resolution. The method may also include acquiring a second SEM image at a second resolution. The method may further include providing an enhanced image by using the first SEM image as a reference to enhance the second SEM image. The enhanced image may be provided by using one or more features extracted from the first image to enhance the second SEM image, or using the first SEM image as a reference to numerically enhance the second SEM image.

公开(公告)号：US20240297013A1

公开(公告)日：2024-09-05

申请号：US18661389

申请日：2024-05-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Jasper Frans Mathijs VAN RENS ,  Thomas Jarik HUISMAN ,  Willem Louis VAN MIERLO ,  Hermanus Adrianus DILLEN

IPC: H01J37/22 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/1477 ,  H01J37/28

Abstract: Disclosed herein is a non-transitory computer readable medium that has stored therein a computer program, wherein the computer program comprises code that, when executed by a computer system, instructs the computer system to perform a method of determining the charging induced distortion of a SEM image, the method comprising: determining, at each of a plurality of locations in a SEM image of at least part of a sample, a deflection of an illuminating charged particle beam caused by a charging of the sample at the location; and determining the charging induced distortion of the SEM image in dependence on the determined deflections at each of the plurality of locations in the SEM image.

公开(公告)号：US20240054669A1

公开(公告)日：2024-02-15

申请号：US18266792

申请日：2021-11-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Tim HOUBEN ,  Thomas Jarik HUISMAN ,  Maxim PISARENCO ,  Scott Anderson MIDDLEBROOKS ,  Chrysostomos BATISTAKIS ,  Yu CAO

IPC: G06T7/593 ,  G06T5/50 ,  G06T7/13

CPC classification number: G06T7/593 ,  G06T5/50 ,  G06T7/13 ,  G06T2207/10061 ,  G06T2207/20084 ,  G06T2207/10012 ,  G06T2207/20212 ,  G06T2207/20081 ,  G06T2207/30148

Abstract: A system, method, and apparatus for determining three-dimensional (3D) information of a structure of a patterned substrate. The 3D information can be determined using one or more models configured to generate 3D information (e.g., depth information) using only a single image of a patterned substrate. In a method, the model is trained by obtaining a pair of stereo images of a structure of a patterned substrate. The model generates, using a first image of the pair of stereo images as input, disparity data between the first image and a second image, the disparity data being indicative of depth information associated with the first image. The disparity data is combined with the second image to generate a reconstructed image corresponding to the first image. Further, one or more model parameters are adjusted based on the disparity data, the reconstructed image, and the first image.

公开(公告)号：US20220107571A1

公开(公告)日：2022-04-07

申请号：US17467441

申请日：2021-09-06

Applicant: ASML Netherlands B.V.

Inventor： Thomas Jarik HUISMAN ,  Ruben Cornelis MAAS ,  Hermanus Adrianus DILLEN

IPC: G03F7/20 ,  G01B9/04 ,  G03F1/84 ,  G06T7/12 ,  G03F1/86

Abstract: Disclosed is a method of, and associated apparatus for, determining an edge position relating to an edge of a feature comprised within an image, such as a scanning electron microscope image, which comprises noise. The method comprises determining a reference signal from said image; and determining said edge position with respect to said reference signal. The reference signal may be determined from the image by applying a 1-dimensional low-pass filter to the image in a direction parallel to an initial contour estimating the edge position.

公开(公告)号：US20240212108A1

公开(公告)日：2024-06-27

申请号：US18596540

申请日：2024-03-05

Applicant: ASML Netherlands B.V.

Inventor： Thomas Jarik HUISMAN ,  Jasper Frans Mathijs VAN RENS

IPC: G06T5/50 ,  G06T5/80 ,  G06T7/33 ,  H01J37/22

CPC classification number: G06T5/50 ,  G06T5/80 ,  G06T7/33 ,  H01J37/222 ,  G06T2207/10061 ,  H01J2237/2809

Abstract: Disclosed herein is a method of reducing a sample charging effect in a scanning electron microscope (SEM) image, the method comprising: obtaining a first SEM image of a target feature on a sample from a first electron beam scan in a first scanning direction; obtaining a second SEM image of the target feature on the sample from a second electron beam scan in a second scanning direction different from the first scanning direction; aligning the first SEM image and the second SEM image; and generating an output image based a combination of the first SEM image and the second SEM image.

公开(公告)号：US20210003521A1

公开(公告)日：2021-01-07

申请号：US17019149

申请日：2020-09-11

Applicant: ASML Netherlands B.V.

Inventor： Thomas Jarik HUISMAN ,  Sander Frederik WUISTER ,  Hermanus Adrianus DILLEN ,  Dorothea Maria Christina OORSCHOT

IPC: G01N23/2251 ,  G03F1/84 ,  G03F7/20 ,  G06T7/62 ,  G06T7/00

Abstract: Apparatuses, systems, and methods for inspecting a semiconductor sample are disclosed. In some embodiments, the sample may comprise a structure having a plurality of openings in a top layer of the structure. In some embodiments, the method may comprise generating an image of the structure using a SEM; inspecting an opening of the plurality of openings by determining a dimension of the opening based on the image and determining an open-state of the opening, based on a contrast of the image; and determining a quality of the opening based on both the determined dimension and the determined open-state of the opening.

公开(公告)号：US20200249181A1

公开(公告)日：2020-08-06

申请号：US16652231

申请日：2018-10-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Erwin Paul SMAKMAN ,  Albertus Victor Gerardus MANGNUS ,  Thomas Jarik HUISMAN

IPC: G01N23/2251 ,  G01B15/00 ,  H01J37/065 ,  H01J37/073 ,  H01J37/22 ,  H01J37/28 ,  G03F7/20

Abstract: An inspection method for a substrate, the inspection method including: providing an electron beam having a first polarization state to a sample of the semiconductor substrate; detecting a first response signal of the sample caused by interaction of the electron beam having the first polarization state with the sample; providing an electron beam having a second polarization state to the sample of the semiconductor substrate; detecting a second response signal of the sample caused by interaction of the electron beam having the second polarization state with the sample; and determining a geometric or material property of the sample, based on the first response signal and the second response signal.