公开(公告)号：US20160161864A1

公开(公告)日：2016-06-09

申请号：US14906896

申请日：2014-07-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Scott Anderson MIDDLEBROOKS ,  Niels GEYPEN ,  Hendrik Jan Hidde SMILDE ,  Alexander STRAAIJER ,  Maurits VAN DER SCHAAR ,  Markus Gerardus Martinus Maria VAN KRAAIJ

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: Disclosed is a method of measuring a parameter of a litho-graphic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.

Abstract translation: 公开了一种测量光刻图形处理参数的方法和相关联的检查装置。 该方法包括使用多个不同的照明条件测量衬底上的至少两个目标结构，所述目标结构具有有意的覆盖偏移; 为每个目标结构获得表示总体不对称性的不对称测量，其包括由于（i）故意重叠偏差引起的贡献，（ii）在形成目标结构期间的覆盖误差，以及（iii）任何特征不对称性。 对不对称测量数据进行回归分析，通过将线性回归模型拟合到针对另一目标结构的不对称测量的一个目标结构的不对称测量的平面表示，线性回归模型不一定通过平面表示的原点拟合 。 然后可以从线性回归模型描述的梯度确定覆盖误差。

公开(公告)号：US20150338748A1

公开(公告)日：2015-11-26

申请号：US14816997

申请日：2015-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Christiaan Alexander HOOGENDAM ,  Antonius Theodorus Anna Maria DERKSEN ,  Sjoerd Nicolaas Lambertus DONDERS ,  Joeri LOF ,  Erik Roelof LOOPSTRA ,  Johannes Catharinus Hubertus MULKENS ,  Hans JANSEN ,  Jacobus Johannus Leonardus Hendricus VERSPAY ,  Alexander STRAAIJER ,  Bob STREEFKERK

IPC: G03F7/20

CPC classification number: G03F7/70866 ,  G03F7/70341 ,  G03F7/707 ,  G03F7/70716 ,  G03F7/70833 ,  G03F7/7085 ,  G03F7/70916 ,  G03F9/7088

Abstract: A lithographic projection apparatus includes a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a liquid supply system configured to provide liquid to a space between the projection system and the substrate; and a shutter configured to isolate the space from the substrate or a space to be occupied by a substrate.

Abstract translation: 光刻投影装置包括被配置为保持图案形成装置的支撑结构，所述图案形成装置被配置为根据期望的图案对辐射束进行图案化; 被配置为保持基板的基板台; 投影系统，被配置为将所述图案化的光束投影到所述基板的目标部分上; 液体供应系统，被配置为向所述投影系统和所述基板之间的空间提供液体; 以及快门，被配置为隔离所述基板的空间或被基板占据的空间。

公开(公告)号：US20150070668A1

公开(公告)日：2015-03-12

申请号：US14541037

申请日：2014-11-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Bob STREEFKERK ,  Antonius Theodorus Anna Maria DERKSEN ,  Joeri LOF ,  Klaus SIMON ,  Alexander STRAAIJER

IPC: G03F7/20

CPC classification number: G03F7/70875 ,  G03F7/70258 ,  G03F7/70341 ,  G03F7/70716 ,  G03F7/70891

Abstract: An immersion lithography apparatus comprises a temperature controller configured to adjust a temperature of a projection system, a substrate and a liquid towards a common target temperature. Controlling the temperature of these elements and reducing temperature gradients may improve imaging consistency and general lithographic performance. Measures to control the temperature may include controlling the immersion liquid flow rate and liquid temperature, for example, via a feedback circuit.

Abstract translation: 浸没式光刻设备包括温度控制器，该温度控制器被配置为朝向共同的目标温度调节投影系统，基板和液体的温度。 控制这些元件的温度并降低温度梯度可以提高成像的一致性和一般的光刻性能。 控制温度的措施可以包括例如经由反馈电路来控制浸没液体流速和液体温度。