公开(公告)号：US20220057192A1

公开(公告)日：2022-02-24

申请号：US17519641

申请日：2021-11-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve BHATTACHARYYA ,  Henricus Wilhelmus Maria VAN BUEL ,  Christophe David FOUQUET ,  Hendrik Jan Hidde SMILDE ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF ,  Richard Johannes Franciscus VAN HAREN ,  Xing Lan LIU ,  Johannes Marcus Maria BELTMAN ,  Andreas FUCHS ,  Omer Abubaker Omer ADAM ,  Michael KUBIS ,  Martin Jacobus Johan JAK

IPC: G01B11/14 ,  G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

公开(公告)号：US20200057386A1

公开(公告)日：2020-02-20

申请号：US16539208

申请日：2019-08-13

Applicant: ASML Netherlands B.V.

Inventor： Seyed Iman MOSSAVAT ,  Remco DIRKS ,  Hendrik Jan Hidde SMILDE

IPC: G03F7/20 ,  G01N23/20066 ,  G01N23/201

Abstract: A method of determining an estimated intensity of radiation scattered by a target illuminated by a radiation source, has the following steps: obtaining and training (402) a library REFLIB of wavelength-dependent reflectivity as a function of the wavelength, target structural parameters and angle of incidence R(λ,θ,x,y); determining (408) a wide-band library (W-BLIB) of integrals of wavelength-dependent reflectivity R of the target in a Jones framework over a range of radiation source wavelengths λ; training (TRN) (410) the wide-band library; and determining (412), using the trained wide-band library, an estimated intensity (INT) of radiation scattered by the target illuminated by the radiation source.

公开(公告)号：US20140204397A1

公开(公告)日：2014-07-24

申请号：US14224532

申请日：2014-03-25

Applicant: ASML Netherlands B.V.

Inventor： Hendrik Jan Hidde SMILDE ,  Patrick WARNAAR

IPC: G03F9/00

CPC classification number: G03F9/00 ,  G03F7/70483 ,  G03F7/70633

Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application. A second type of correction may be applied to reduce the influence of asymmetry between the first and second modes of illumination or imaging, for example to permit a more accurate overly measurement in a semiconductor device manufacturing process.

Abstract translation: 公开了用于测量由基板上的光刻工艺形成的目标结构的方法。 目标内的光栅或其他结构小于测量光学系统的照明点和视场。 组件结构的图像的位置在测量之间变化，并且应用第一类型的校正以减少由与来自不同位置的光路的差异引起的对测量的强度的影响。 可以在光学系统的视野内同时成像多个结构，并且每个结构被校正为其各自的位置。 测量可以包括在不同照明和/或成像模式下的相同目标的第一和第二图像，例如在暗场测量应用中。 可以应用第二类型的校正来减少第一和第二照明模式或成像之间的不对称性的影响，例如以允许在半导体器件制造过程中更准确地过度测量。

公开(公告)号：US20170052454A1

公开(公告)日：2017-02-23

申请号：US15240781

申请日：2016-08-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Martin Jacobus Johan JAK ,  Hendrik Jan Hidde SMILDE ,  Te-Chih HUANG ,  Victor Emanuel CALADO ,  Henricus Wilhelmus Maria VAN BUEL ,  Richard Johannes Franciscus VAN HAREN

IPC: G03F7/20

CPC classification number: G03F7/7065 ,  G03F7/70633 ,  G03F7/70683

Abstract: A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.

Abstract translation: 衬底具有通过光刻工艺在其上形成的多个覆盖光栅。 每个覆盖光栅具有已知的叠加偏置。 叠加偏置的值包括例如在以P为中心的区域中的零点和两个值的区域中的两个值，其中P是光栅的间距。 使用不同覆盖偏差值的知识，对光栅的不对称测量计算叠加，每个整体不对称测量由相应的权重因子加权。 每个权重因子表示相应覆盖光栅内的特征不对称的度量。 该计算用于提高测量过程和/或光刻过程的后续性能。 另外可以通过第二加权因子来加权一些不对称测量值，以消除或减少相位不对称对叠加层的贡献。

公开(公告)号：US20160291481A1

公开(公告)日：2016-10-06

申请号：US15038535

申请日：2014-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Hendrik Jan Hidde SMILDE ,  Arie Jeffrey DEN BOEF ,  Omer Abubaker Omer ADAM ,  Martin Jacobus Johan JAK

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: A substrate has three or more overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values and an assumed non-linear relationship between overlay and target asymmetry, thereby to correct for feature asymmetry. The periodic relationship in the region of zero bias and P/2 has gradients of opposite sign. The calculation allows said gradients to have different magnitudes as well as opposite sign. The calculation also provides information on feature asymmetry and other processing effects. This information is used to improve subsequent performance of the measurement process, and/or the lithographic process.

Abstract translation: 衬底具有通过光刻工艺在其上形成的三个或更多个覆盖光栅。 每个覆盖光栅具有已知的叠加偏置。 叠加偏置的值包括例如在以P为中心的区域中的零点和两个值的区域中的两个值，其中P是光栅的间距。 使用不同覆盖偏差值的知识以及覆盖和目标不对称之间的假设非线性关系，对光栅的不对称测量计算叠加，从而校正特征不对称性。 零偏置区域和P / 2区域的周期关系具有相反符号梯度。 该计算允许所述梯度具有不同的幅度以及相反的符号。 该计算还提供了有关特征不对称性和其他处理效果的信息。 该信息用于改进随后的测量过程和/或光刻过程的性能。

公开(公告)号：US20160179019A1

公开(公告)日：2016-06-23

申请号：US15057651

申请日：2016-03-01

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Patrick WARNAAR ,  Kaustuve BHATTACHARYYA ,  Hendrik Jan Hidde SMILDE ,  Michael KUBIS

IPC: G03F9/00

CPC classification number: G03F9/7042 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683 ,  H01L23/544 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

公开(公告)号：US20130258310A1

公开(公告)日：2013-10-03

申请号：US13799673

申请日：2013-03-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Hendrik Jan Hidde SMILDE ,  Omer Abubaker Omer Adam

IPC: G01N21/956 ,  G03F9/00

CPC classification number: G01N21/956 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7019 ,  Y10T428/24802

Abstract: A lithographic process is used to form a plurality of target structures (T) on a substrate (W). Each target structure comprises overlaid gratings each having a specific overlay bias. Asymmetry (A) of each grating, measured by scatterometry, includes contributions due to (i) the overlay bias, (ii) an overlay error (OV) in the lithographic process and (iii) bottom grating asymmetry within the overlaid gratings. Asymmetry measurements are obtained for three or more target structures having three or more different values of overlay bias (e.g., −d, 0, +d). Knowing the three different overlay bias values and a theoretical curve relationship between overlay error and asymmetry, overlay error (OV) can be calculated while correcting the effect of bottom grating asymmetry. Bias schemes with three and four different biases are disclosed as examples. Gratings with different directions and biases can be interleaved in a composite target structure.

Abstract translation: 使用光刻工艺在衬底（W）上形成多个靶结构（T）。 每个目标结构包括各自具有特定覆盖偏压的重叠光栅。 通过散射测量，每个光栅的不对称（A）包括由于（i）叠加偏压，（ii）光刻工艺中的覆盖误差（OV）和（iii）覆盖光栅内的底部光栅不对称引起的贡献。 对于具有三个或更多个不同重叠偏置值（例如，-d，0，+ d）的三个或更多个目标结构，获得不对称测量。 知道三种不同的叠加偏差值和叠加误差与不对称性之间的理论曲线关系，可以计算出叠加误差（OV），同时校正底​​部光栅不对称的影响。 作为示例公开了具有三种和四种不同偏差的偏置方案。 具有不同方向和偏差的光栅可以在复合目标结构中交错。

公开(公告)号：US20190278190A1

公开(公告)日：2019-09-12

申请号：US16421697

申请日：2019-05-24

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson MIDDLEBROOKS ,  Niels GEYPEN ,  Hendrik Jan Hidde SMILDE ,  Alexander STRAAIJER ,  Maurits VAN DER SCHAAR ,  Markus Gerardus Martinus Maria VAN KRAAIJ

IPC: G03F7/20

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.

公开(公告)号：US20170176871A1

公开(公告)日：2017-06-22

申请号：US15118440

申请日：2015-01-29

Applicant: ASML Netherlands B.V.

Inventor： Henricus Wilhelmus Maria VAN BUEL ,  Johannes Marcus Maria BELTMAN ,  Xing Lan LIU ,  Hendrik Jan Hidde SMILDE ,  Richard Johannes Franciscus VAN HAREN

IPC: G03F7/20 ,  G01N21/956 ,  G01N21/93

CPC classification number: G03F7/70683 ,  G01N21/93 ,  G01N21/956 ,  G03F7/70633

Abstract: A method of devising a target arrangement, and associated target and reticle. The target includes a plurality of gratings, each grating having a plurality of substructures. The method includes: defining a target area; locating the substructures within the target area so as to form the gratings; and locating assist features at the periphery of the gratings, the assist features being configured to reduce measured intensity peaks at the periphery of the gratings. The method may include an optimization process including modelling a resultant image obtained by inspection of the target using a metrology process; and evaluating whether the target arrangement is optimized for detection using a metrology process.

公开(公告)号：US20170068173A1

公开(公告)日：2017-03-09

申请号：US15355334

申请日：2016-11-18

Applicant: ASML Netherlands B.V.

Inventor： Martin Jacobus Johan JAK ,  Armand Eugene Albert KOOLEN ,  Hendrik Jan Hidde SMILDE

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/70483 ,  G03F7/70633 ,  G03F7/70683

Abstract: A metrology target formed by a lithographic process on a substrate includes a plurality of component gratings. Images of the target are formed using +1 and −1 orders of radiation diffracted by the component gratings. Regions of interest (ROIs) in the detected image are identified corresponding the component gratings. Intensity values within each ROI are processed and compared between images, to obtain a measurement of asymmetry and hence overlay error. Separation zones are formed between the component gratings and design so as to provide dark regions in the image. In an embodiment, the ROIs are selected with their boundaries falling within the image regions corresponding to the separation zones. By this measure, the asymmetry measurement is made more tolerant of variations in the position of the ROI. The dark regions also assist in recognition of the target in the images.

Abstract translation: 由基板上的光刻工艺形成的测量目标包括多个分量光栅。 使用由分量光栅衍射的+1和-1次辐射来形成目标的图像。 识别检测到的图像中的感兴趣区域（ROI）对应于分量光栅。 在每个ROI内的强度值被处理并在图像之间进行比较，以获得不对称性的测量并因此获得覆盖误差。 在分量光栅之间形成分离区并设计成在图像中提供暗区。 在一个实施例中，选择其边界落入对应于分离区域的图像区域内的ROI。 通过这种措施，使不对称测量更加容忍ROI的位置的变化。 黑暗的地区也有助于识别图像中的目标。