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    METHOD FOR PROVIDING AN ORDERED LAYER OF SELF-ASSEMBLABLE POLYMER FOR USE IN LITHOGRAPHY
    21.
    发明申请
    METHOD FOR PROVIDING AN ORDERED LAYER OF SELF-ASSEMBLABLE POLYMER FOR USE IN LITHOGRAPHY 审中-公开
    用于提供自组装聚合物的订购层的方法用于LITHOGRAPHY

    公开(公告)号：WO2011128120A1

    公开(公告)日：2011-10-20

    申请号：PCT/EP2011/050668

    申请日：2011-01-19

    Applicant: ASML NETHERLANDS B.V. ,  PEETERS, Emiel ,  WUISTER, Sander ,  KOOLE, Roelof

    Inventor： PEETERS, Emiel ,  WUISTER, Sander ,  KOOLE, Roelof

    IPC: G03F7/00

    CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

    Abstract: A method for providing an ordered polymer layer at a surface of a substrate includes depositing a self-assemblable polymer layer directly onto a primer layer on a substrate to provide an interface between the self-assemblable polymer layer and the primer layer, and treating the self-assemblable polymer layer to provide self-assembly into an ordered polymer layer, such as a block copolymer, having first and second domain types at the interface. The primer layer is adapted to improve its chemical affinity to each domain type at the interface, in response to the presence of the respective domain type in the self-assembled polymer at the interface during the self-assembly of the self-assemblable polymer layer into the ordered polymer layer. This may lead to reduction in defect levels and/or improved persistence length for the ordered polymer layer. The method may be useful for forming resist layers for use in device lithography.

    Abstract translation: 在衬底的表面提供有序聚合物层的方法包括将可自组装的聚合物层直接沉积在基底上的底漆层上，以提供可自组装的聚合物层和底漆层之间的界面，以及处理自身 可以将聚合物层自组装成有序聚合物层，例如在界面处具有第一和第二域类型的嵌段共聚物。 响应于在自组装聚合物层的自组装期间在界面处的自组装聚合物中存在相应的畴型，引物层适于改善其在界面处对每种畴型的化学亲和力 有序聚合物层。 这可能导致有序聚合物层的缺陷水平和/或改善的持续长度的降低。 该方法可用于形成用于器件光刻的抗蚀剂层。

    METHODS FOR PROVIDING LITHOGRAPHY FEATURES ON A SUBSTRATE BY SELF-ASSEMBLY OF BLOCK COPOLYMERS
    22.
    发明申请
    METHODS FOR PROVIDING LITHOGRAPHY FEATURES ON A SUBSTRATE BY SELF-ASSEMBLY OF BLOCK COPOLYMERS 审中-公开
    通过嵌段共聚物自组装提供基板上的刻蚀特征的方法

    公开(公告)号：WO2014139793A1

    公开(公告)日：2014-09-18

    申请号：PCT/EP2014/053692

    申请日：2014-02-26

    Applicant: ASML NETHERLANDS B.V.

    Inventor： WUISTER, Sander ,  PEETERS, Emiel

    IPC: H01L21/027 ,  B81C1/00

    CPC classification number: H01L21/31058 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/76802

    Abstract: Causing a self-assemblable block copolymer (BCP) having first and second blocks to migrate from a region surrounding a lithography recess of the substrate and a dummy recess on the substrate to within the lithography recess and the dummy recess, causing the BCP to self-assemble into an ordered layer within the lithography recess, the layer having a first block domain and a second block domain, and selectively removing the first domain to form a lithography feature having the second domain within the lithography recess, wherein a width of the dummy recess is smaller than the minimum width required by the BCP to self-assemble, the dummy recess is within the region of the substrate surrounding the lithography recess from which the BCP is caused to migrate, and the width between portions of a side-wall of the lithography recess is greater than the width between portions of a side-wall of the dummy recess.

    Abstract translation: 引起具有第一和第二嵌段的自组装嵌段共聚物（BCP）从基板的光刻凹槽周围的区域和基板上的虚设凹槽迁移到光刻凹槽和虚设凹槽内，使BCP自对准， 组装成光刻凹槽内的有序层，该层具有第一块区域和第二块区域，并且选择性地去除第一区域以形成在光刻凹槽内具有第二区域的光刻特征，其中虚设凹槽 小于BCP自组装所需的最小宽度，虚拟凹槽位于围绕光刻凹槽的基底的区域内，BCP从其移动，并且侧壁的部分之间的宽度 光刻凹槽大于虚拟凹槽的侧壁的部分之间的宽度。

    METHODS AND COMPOSITIONS FOR PROVIDING SPACED LITHOGRAPHY FEATURES ON A SUBSTRATE BY SELF-ASSEMBLY OF BLOCK COPOLYMERS
    23.
    发明申请
    METHODS AND COMPOSITIONS FOR PROVIDING SPACED LITHOGRAPHY FEATURES ON A SUBSTRATE BY SELF-ASSEMBLY OF BLOCK COPOLYMERS 审中-公开
    通过块状共聚物自组装提供基板上的间距平面特征的方法和组合

    公开(公告)号：WO2013160027A1

    公开(公告)日：2013-10-31

    申请号：PCT/EP2013/055689

    申请日：2013-03-19

    Applicant: ASML NETHERLANDS B.V.

    Inventor： WUISTER, Sander ,  PEETERS, Emiel

    IPC: G03F7/00

    CPC classification number: G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  G03F7/0002

    Abstract: A method is disclosed to form a row of mutually spaced elongate lithography features along an axis on a substrate, for instance for use as contact electrodes for a NAND device. The method involves directing alignment of self-assemblable block copolymer (BCP) composition in a trench in a resist layer on the substrate, having the substrate as base, with an epitaxy feature in the trench to cause the ordered BCP layer to have elongate domains stretching across the trench width, substantially parallel to each other and to the substrate. The ordered BCP layer is then used as a resist to pattern the substrate. A BCP composition adapted to assemble with spaced discontinuous elongate elliptical domains is disclosed. The method may allow for sub-resolution contact arrays to be formed using UV lithography.

    Abstract translation: 公开了一种形成沿衬底上的轴线的相互间隔的细长光刻特征行的方法，例如用作NAND器件的接触电极。 该方法包括将自组装嵌段共聚物（BCP）组合物定向在衬底上的抗蚀剂层中的沟槽中，其具有衬底作为基底，在沟槽中具有外延特征，以使有序的BCP层具有伸长的畴伸长 横跨沟槽宽度，基本上彼此平行并且与基底平行。 然后将有序的BCP层用作抗蚀剂以对基底进行图案化。 公开了适于与间隔不连续的细长椭圆域组装的BCP组合物。 该方法可以允许使用UV光刻形成亚分辨率接触阵列。

    SELF-ASSEMBLABLE POLYMER AND METHOD FOR USE IN LITHOGRAPHY
    25.
    发明申请
    SELF-ASSEMBLABLE POLYMER AND METHOD FOR USE IN LITHOGRAPHY 审中-公开
    自组装聚合物和方法用于光刻

    公开(公告)号：WO2012175342A2

    公开(公告)日：2012-12-27

    申请号：PCT/EP2012/060783

    申请日：2012-06-07

    Applicant: ASML NETHERLANDS B.V. ,  BRIZARD, Aurelie ,  KETELAARS, Wilhelmus ,  WUISTER, Sander ,  KOOLE, Roelof ,  PEETERS, Emiel ,  VAN HEESCH, Chris ,  BOOTS, Henri ,  NGUYEN, Thanh

    Inventor： BRIZARD, Aurelie ,  KETELAARS, Wilhelmus ,  WUISTER, Sander ,  KOOLE, Roelof ,  PEETERS, Emiel ,  VAN HEESCH, Chris ,  BOOTS, Henri ,  NGUYEN, Thanh

    IPC: G03F7/00

    CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  C08F299/02 ,  C08F299/04 ,  H01L51/0043

    Abstract: A BCP having first block of first monomer and second block of second monomer, adapted to undergo a transition from disordered state to ordered state at a temperature less than T0D, further including a bridging moiety having a functional group to provide hydrogen bonding between bridging moieties of adjacent first and second BCP molecules when in the ordered state and at a temperature in excess of a glass transition temperature T g for the BCP. Composition including BCP comprising first block of first monomer and second block of second monomer, and a crosslinking compound having first and second terminal groups joined by a central moiety and arranged to crosslink second blocks of adjacent first and second BCP molecules by providing non-covalent bonding between the terminal groups and a functional group of the second monomer of the second blocks when the BCP is in the ordered state.

    Abstract translation: BCP具有第一单体的第一嵌段和第二单体的第二嵌段，适于在低于T0D的温度下经历从无序状态转化为有序状态，还包括具有官能团的桥连部分以在桥连部分之间提供氢键 相邻的第一和第二BCP分子处于有序状态并且在超过BCP的玻璃化转变温度Tg的温度下。 包含BCP的组合物包含第一单体的第一嵌段和第二单体的第二嵌段，以及具有通过中心部分连接的第一和第二端基的交联化合物，并且被布置成通过提供非共价键来交联相邻的第一和第二BCP分子的第二嵌段 当BCP处于有序状态时，端子组与第二块的第二单体的官能团之间。

    LITHOGRAPHY METHOD AND APPARATUS
    28.
    发明申请
    LITHOGRAPHY METHOD AND APPARATUS 审中-公开
    LITHOGRAPHY方法和装置

    公开(公告)号：WO2012019874A1

    公开(公告)日：2012-02-16

    申请号：PCT/EP2011/062255

    申请日：2011-07-18

    Applicant: ASML Netherlands B.V. ,  KOEVOETS, Adrianus ,  RENKENS, Michael ,  WUISTER, Sander

    Inventor： KOEVOETS, Adrianus ,  RENKENS, Michael ,  WUISTER, Sander

    IPC: G03F7/00 ,  G03F7/20

    CPC classification number: G03F7/70875 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/70783

    Abstract: In an embodiment, a lithography method is disclosed that includes providing a providing a first heat load to a first area of an object, and providing a second heat load to a second area of the object, wherein the second heat load is configured to ensure a deformation of the first area of the object caused by providing both the first heat load and the second heat load is smaller than a deformation of the first area of the object caused by providing only the first heat load.

    Abstract translation: 在一个实施例中，公开了一种光刻方法，其包括提供向物体的第一区域提供第一热负荷并且向物体的第二区域提供第二热负荷，其中第二热负荷被配置为确保 通过提供第一热负荷和第二热负荷而引起的物体的第一区域的变形小于由仅提供第一热负荷引起的物体的第一区域的变形。

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