公开(公告)号：WO2013010730A1

公开(公告)日：2013-01-24

申请号：PCT/EP2012/061293

申请日：2012-06-14

Applicant: ASML NETHERLANDS B.V. ,  WUISTER, Sander

Inventor： WUISTER, Sander

IPC: G03F7/00

CPC classification number: G03F7/2024 ,  B81C1/00428 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/16

Abstract: Methods are disclosed for depositing a template for directed self-assembly of a self-assemblable block polymer on a surface of a substrate. The method involves providing a chemical epitaxy pattern of alternating first and second regions having differing chemical affinities for first and second blocks of the polymer on the surface by photolithography, and providing spaced graphoepitaxy features on the surface by photolithography. The chemical epitaxy pattern is aligned with and located between pairs of spaced graphoepitaxy features. The spaced graphoepitaxy features and chemical epitaxy pattern are arranged to act together to direct self-assembly of the self- assemblage block copolymer. The resulting template may be used to direct self- assembly of a suitable self-assemblable polymer and the resulting aligned and oriented self-assembled polymer may itself be used as a resist for lithography of the substrate.

Abstract translation: 公开了用于在衬底的表面上沉积用于自组装嵌段聚合物的定向自组装的模板的方法。 该方法包括通过光刻法提供具有不同化学亲和力的交替的第一和第二区域的表面上的聚合物的第一和第二嵌段的化学外延图案，并且通过光刻法在表面上提供间隔的划线图案特征。 化学外延图案与成对间隔的划线图案特征对准并定位。 排列的划线图案特征和化学外延图案被布置成一起作用以引导自组装嵌段共聚物的自组装。 所得到的模板可以用于引导合适的可自组装聚合物的自组装，并且所得到的对准且定向的自组装聚合物本身可以用作衬底的光刻用抗蚀剂。

公开(公告)号：WO2011064021A1

公开(公告)日：2011-06-03

申请号：PCT/EP2010/064662

申请日：2010-10-01

Applicant: ASML NETHERLANDS B.V. ,  WUISTER, Sander

Inventor： WUISTER, Sander

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

Abstract: In an embodiment, a lithographic apparatus is disclosed that includes an imprint template holder configured to hold an imprint template, and a dispensing mechanism of polar molecules, wherein the dispensing mechanism of polar molecules is configured to provide polar molecules into a local environment in the vicinity of the imprint template, such that the concentration of polar molecules in the local environment in the vicinity of the imprint template is greater than the concentration of polar molecules in other parts of the lithographic apparatus.

Abstract translation: 在一个实施例中，公开了一种光刻设备，其包括构造成保持压印模板的压印模板保持器和极性分子的分配机构，其中极性分子的分配机构被配置为在附近的局部环境中提供极性分子 使得压印模板附近的局部环境中的极性分子的浓度大于光刻设备的其它部分中极性分子的浓度。

公开(公告)号：WO2014124795A1

公开(公告)日：2014-08-21

申请号：PCT/EP2014/051451

申请日：2014-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： WUISTER, Sander ,  DRUZHININA, Tamara ,  DUSA, Mircea

IPC: H01L21/027 ,  G03F7/00 ,  H01L21/033 ,  H01L21/308 ,  H01L29/66

CPC classification number: H01L21/3086 ,  B82Y10/00 ,  G03F1/50 ,  G03F1/80 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0337 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785

Abstract: A method of forming a plurality of regularly spaced lithography features, the method including providing a self-assemblable block copolymer having first and second blocks in a plurality of trenches on a substrate, each trench including opposing side-walls and a base, with the side-walls having a width therebetween, wherein a first trench has a greater width than a second trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in each trench, the layer having a first domain of the first block alternating with a second domain of the second block, wherein the first and second trenches have the same number of each respective domain; and selectively removing the first domain to form regularly spaced rows of lithography features having the second domain along each trench, wherein the pitch of the features in the first trench is greater than the pitch of the features in the second trench.

Abstract translation: 一种形成多个规则间隔的光刻特征的方法，所述方法包括提供在衬底上的多个沟槽中具有第一和第二块的自组装嵌段共聚物，每个沟槽包括相对的侧壁和底部， 在其间具有宽度的壁，其中第一沟槽具有比第二沟槽更大的宽度; 使得所述自组装嵌段共聚物自组装成每个沟槽中的有序层，所述层具有所述第一嵌段的第一区域与所述第二嵌段的第二区域交替，其中所述第一和第二沟槽具有相同数量的 各个域; 并且选择性地移除所述第一区域以形成沿着每个沟槽具有所述第二区域的规则间隔的光刻特征行，其中所述第一沟槽中的所述特征的间距大于所述第二沟槽中的所述特征的间距。

公开(公告)号：WO2013050338A1

公开(公告)日：2013-04-11

申请号：PCT/EP2012/069400

申请日：2012-10-02

Applicant: ASML NETHERLANDS B.V.

Inventor： NGUYEN, Thanh ,  FINDERS, Jozef ,  KETELAARS, Wilhelmus ,  WUISTER, Sander ,  VAN DER HEIJDEN, Eddy ,  MEESSEN, Hieronymus ,  KOOLE, Roelof ,  PEETERS, Emiel ,  VAN HEESCH, Chris ,  BRIZARD, Aurelie ,  BOOTS, Henri ,  DRUZHININA, Tamara ,  DE RUITER, Jessica

IPC: B81C1/00

CPC classification number: C30B1/12 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/0337 ,  Y10T117/10

Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.

Abstract translation: 用于使自组装嵌段聚合物对准以将其自组装成具有平行于第一轴线延伸的不连续第一区域的平行行的二维阵列，并且沿着正交的第二轴相互间隔开并由连续的第二轴 域。 所述方解石模板具有第一和第二基本上平行的侧壁，所述第一和第二基本平行的侧壁平行于并限定第一轴线并且限定第一轴线并且沿着第二轴线相互间隔延伸，以提供隔室，以将自组装嵌段共聚物的至少一排不连续的第一区域保持在基板上 在侧壁之间并平行于侧壁，并通过连续的第二结构域与之隔开。 隔室具有图案外延成核特征，布置成将隔离物内的特定位置处的不连续的第一结构域中的至少一个定位。 还公开了用于形成图案石墨模板的方法及其用于器件光刻的方法。

公开(公告)号：WO2012175343A1

公开(公告)日：2012-12-27

申请号：PCT/EP2012/060784

申请日：2012-06-07

Applicant: ASML NETHERLANDS B.V. ,  BRIZARD, Aurelie ,  WUISTER, Sander ,  KOOLE, Roelof ,  PEETERS, Emiel

Inventor： BRIZARD, Aurelie ,  WUISTER, Sander ,  KOOLE, Roelof ,  PEETERS, Emiel

IPC: G03F7/00 ,  C08G83/00

CPC classification number: G03F7/004 ,  B82Y10/00 ,  B82Y40/00 ,  C30B19/00 ,  G03F7/0002

Abstract: A block copolymer, adapted to self-assemble to form an ordered pattern on a substrate, has first and second blocks with a terminal moiety covalently bonded to the end of the first block. The molecular weight of the terminal moiety is 20% or less than that of the block copolymer and the terminal moiety has a low chemical affinity for the first block. The terminal moiety can assist the accurate positional placement of the domains of the ordered array and lead to improved critical dimension uniformity and/or reduced line edge roughness. The polymer may be useful in combination with a graphoepitaxy template, where the terminal moiety is chosen to associate with a sidewall of the template. This may reduce undesired aggregation of polymer domains at a sidewall and/or assist in domain placement accuracy.

Abstract translation: 适于自组装以在基底上形成有序图案的嵌段共聚物具有第一和第二嵌段，其末端部分共价键合到第一嵌段的末端。 末端部分的分子量为嵌段共聚物的分子量的20％以下，末端部分对第一嵌段具有低的化学亲和力。 末端部分可以帮助有序阵列的域的精确位置放置并且导致改进的临界尺寸均匀性和/或减少的线边缘粗糙度。 所述聚合物可以与骨架外延模板组合使用，其中末端部分被选择为与模板的侧壁缔合。 这可以减少侧壁处的聚合物域的不希望的聚集和/或有助于域放置精度。

公开(公告)号：WO2012084558A1

公开(公告)日：2012-06-28

申请号：PCT/EP2011/072379

申请日：2011-12-09

Applicant: ASML NETHERLANDS B.V. ,  PEETERS, Emiel ,  KETELAARS, Wilhelmus ,  DIJKSMAN, Johan ,  WUISTER, Sander ,  KOOLE, Roelof ,  VAN HEESCH, Chris

Inventor： PEETERS, Emiel ,  KETELAARS, Wilhelmus ,  DIJKSMAN, Johan ,  WUISTER, Sander ,  KOOLE, Roelof ,  VAN HEESCH, Chris

IPC: G03F7/00

CPC classification number: C30B19/12 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: A method is disclosed involving depositing a neutral orientation template layer onto a substrate after formation of chemical epitaxy or graphoepitaxy features on the substrate, but before deposition and orientation of a self-assemblable polymer. The orientation layer is arranged to bond with the substrate but not with certain features, so that it may be easily removed by vacuum or rinsing with organic solvent. The neutral orientation layer has a chemical affinity to match that of blocks in the self-assemblable polymer so that blocks of differing types wet the neutral orientation layer so that domains in the self-assembled polymer may lie side by side along the substrate surface, with interfaces normal to the substrate surface. The resulting aligned and oriented self-assembled polymer may itself be used as a resist for device lithography of the substrate.

Abstract translation: 公开了一种方法，其涉及在衬底上形成化学外延或者石墨电极特征之后，但在自组装聚合物的沉积和取向之前，将中性取向模板层沉积到衬底上。 取向层被布置成与基底结合，但不具有某些特征，使得其可以容易地通过真空或用有机溶剂漂洗除去。 中性取向层具有与自组装聚合物中的嵌段相符的化学亲和力，使得不同类型的块润湿中性取向层，使得自组装聚合物中的畴可以沿着衬底表面并排， 界面垂直于衬底表面。 所得到的对准和取向的自组装聚合物本身可以用作衬底的器件光刻的抗蚀剂。

公开(公告)号：WO2011064020A1

公开(公告)日：2011-06-03

申请号：PCT/EP2010/064607

申请日：2010-09-30

Applicant: ASML NETHERLANDS B.V. ,  WUISTER, Sander ,  KRUIJT-STEGEMAN, Yvonne

Inventor： WUISTER, Sander ,  KRUIJT-STEGEMAN, Yvonne

IPC: G03F7/00 ,  G03F9/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/7042 ,  G03F9/7088

Abstract: An imprint lithography alignment apparatus is disclosed that includes at least two detectors which are configured to detect an imprint template alignment mark, wherein the alignment apparatus further comprises alignment radiation adjustment optics which are configured to provide adjustment of locations from which the at least two alignment detectors receive alignment radiation.

Abstract translation: 公开了一种压印光刻对准装置，其包括被配置为检测压印模板对准标记的至少两个检测器，其中所述对准装置还包括对准辐射调节光学器件，其被配置为提供对所述至少两个对准检测器 接收对准辐射。

公开(公告)号：WO2010063504A3

公开(公告)日：2010-06-10

申请号：PCT/EP2009/062963

申请日：2009-10-06

Applicant: ASML NETHERLANDS B.V. ,  KONINKLIJKE PHILIPS ELECTRONICS B.V. ,  VAN DER TEMPEL, Leendert ,  DIJKSMAN, Johan ,  WUISTER, Sander ,  KRUIJT-STEGEMAN, Yvonne ,  LAMMERS, Jeroen ,  MUTSAERS, Cornelis

Inventor： VAN DER TEMPEL, Leendert ,  DIJKSMAN, Johan ,  WUISTER, Sander ,  KRUIJT-STEGEMAN, Yvonne ,  LAMMERS, Jeroen ,  MUTSAERS, Cornelis

IPC: G03F7/00

Abstract: A method of imprint lithography involves the use of a void space in the substrate or imprint template. A gas pocket trapped between an imprint template and an imprintable, flowable medium on the substrate may lead to an irregularity once the imprintable medium has set. A void space allows the gas pocket to dissipate by flow or diffusion of gas into the void space, typically prior to setting the imprintable medium. A layer of solid porous medium as part of the imprint template, for instance as a layer forming or neighbouring the patterning surface of the template, may provide the void space. The void space of the porous layer acts as a void space into which the trapped gas can flow or diffuse. The substrate to be patterned may include a porous layer for the same purpose. A suitable solid porous medium includes a nanoporous silica.

公开(公告)号：WO2015018590A1

公开(公告)日：2015-02-12

申请号：PCT/EP2014/064728

申请日：2014-07-09

Applicant: ASML NETHERLANDS B.V.

Inventor： WUISTER, Sander ,  AMBESI, Davide ,  LAENENS, Bart

IPC: B81C1/00 ,  G03F7/00

CPC classification number: G03F1/70 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G06F17/5072 ,  G06F17/5081

Abstract: A method of design or verification for a self-assemblable block copolymer feature, the block copolymer feature including a first domain having a first polymer type and a second domain having a second polymer type, the method including, based on the length of the second polymer type or on an uncertainty in position of the first domain within the block copolymer feature calculated based on the length of the second polymer type, adjusting a parameter of the self-assembly process of a block copolymer feature or verifying a placement of a block copolymer feature.

Abstract translation: 一种用于可自组装嵌段共聚物特征的设计或验证方法，所述嵌段共聚物特征包括具有第一聚合物类型的第一结构域和具有第二聚合物类型的第二结构域，所述方法包括基于所述第二聚合物的长度 类型或基于第二聚合物类型的长度计算的嵌段共聚物特征中的第一结构域的不确定性，调节嵌段共聚物特征的自组装过程的参数或验证嵌段共聚物特征的放置 。

公开(公告)号：WO2013156240A1

公开(公告)日：2013-10-24

申请号：PCT/EP2013/055683

申请日：2013-03-19

Applicant: ASML NETHERLANDS B.V.

Inventor： WUISTER, Sander

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B44C1/227 ,  B82Y10/00 ,  B82Y40/00 ,  C30B19/12 ,  C30B29/58 ,  G03F7/0035 ,  H01L21/0271 ,  H01L21/3081 ,  H01L21/3083 ,  H01L27/11

Abstract: A method is disclosed for forming a row of mutually spaced lithography features on a substrate, such as contact electrodes for a NAND device. The method involves forming and/or using a narrow slot over the substrate defined between the edge of a hard mask layer and a side wall of a trench in a resist layer overlying the edge and the substrate. A self-assemblable block copolymer is deposited and ordered in the trench for use as a further resist for patterning the substrate along the slot. The method allows for a sub-resolution contact array to be formed using UV lithography by overlapping the trench with the hard mask edge to provide the narrow slot in which the contact electrodes may be formed.

Abstract translation: 公开了一种用于在衬底上形成一行相互间隔的光刻特征的方法，例如用于NAND器件的接触电极。 该方法涉及在覆盖边缘和衬底的抗蚀剂层中的在硬掩模层的边缘和沟槽的侧壁之间限定的衬底上形成和/或使用窄缝。 将可自组装的嵌段共聚物沉积并排列在沟槽中，以用作另一抗蚀剂，以沿着该槽形成衬底。 该方法允许使用UV光刻通过将沟槽与硬掩模边缘重叠来形成次分辨率接触阵列，以提供其中可形成接触电极的窄缝隙。