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    HYDROGEN GENERATOR FOR AN ION IMPLANTER
    21.
    发明申请
    HYDROGEN GENERATOR FOR AN ION IMPLANTER 审中-公开

    公开(公告)号：WO2019144093A1

    公开(公告)日：2019-07-25

    申请号：PCT/US2019/014474

    申请日：2019-01-22

    Applicant: AXCELIS TECHNOLOGIES, INC.

    Inventor： COLVIN, Neil ,  HSIEH, Tseh-Jen ,  RZESZUT, Richard ,  COLBY, Wendy

    IPC: H01J37/317 ,  H01J37/08

    Abstract: A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing (154) for supporting an ion source (108) configured to form an ion beam. A gas box (146) within the terminal housing has a hydrogen generator (144) configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs (156) electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing (148) electrically couples the gas box and ion source.

    HYDROGEN CO-GAS WHEN USING ALUMINUM IODIDE AS AN ION SOURCE MATERIAL
    22.
    发明申请
    HYDROGEN CO-GAS WHEN USING ALUMINUM IODIDE AS AN ION SOURCE MATERIAL 审中-公开

    公开(公告)号：WO2018226574A1

    公开(公告)日：2018-12-13

    申请号：PCT/US2018/035833

    申请日：2018-06-04

    Applicant: AXCELIS TECHNOLOGIES, INC.

    Inventor： COLVIN, Neil ,  HSIEH, Tseh-Jen ,  BASSON, Neil

    IPC: H01J37/317 ,  C23C14/48

    Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. An arc chamber forms a plasma from the aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A hydrogen co-gas source further introduces a hydrogen co-gas to react residual aluminum iodide and iodide, where the reacted residual aluminum iodide and iodide is evacuated from the system.

    PHOSPHOROUS TRIFLUORIDE CO-GAS FOR CARBON IMPLANTS
    23.
    发明申请
    PHOSPHOROUS TRIFLUORIDE CO-GAS FOR CARBON IMPLANTS 审中-公开

    公开(公告)号：WO2018098004A1

    公开(公告)日：2018-05-31

    申请号：PCT/US2017/061929

    申请日：2017-11-16

    Applicant: AXCELIS TECHNOLOGIES, INC.

    Inventor： COLVIN, Neil ,  HSIEH, Tseh-Jen

    IPC: C23C14/48 ,  H01J37/317

    Abstract: Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (PF 3 ) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advantageously results in minimal oxidation of the cathode 306 and cathode shield 316. Moreover, acceptable levels of carbon deposits on the arc chamber 300 internal components have been observed as well as marked reductions in the halogen cycle, i.e., WF x formation.

    IN-SITU CLEANING USING HYDROGEN PEROXIDE AS CO-GAS TO PRIMARY DOPANT OR PURGE GAS FOR MINIMIZING CARBON DEPOSITS IN AN ION SOURCE
    24.
    发明申请
    IN-SITU CLEANING USING HYDROGEN PEROXIDE AS CO-GAS TO PRIMARY DOPANT OR PURGE GAS FOR MINIMIZING CARBON DEPOSITS IN AN ION SOURCE 审中-公开
    使用过氧化氢作为原生清洁剂进行原位清洁作为初级掺杂剂或净化气体以最小化离子源中的碳沉积

    公开(公告)号：WO2018064157A1

    公开(公告)日：2018-04-05

    申请号：PCT/US2017/053701

    申请日：2017-09-27

    Applicant: AXCELIS TECHNOLOGIES, INC.

    Inventor： COLVIN, Neil ,  HSIEH, Tseh-Jen

    IPC: H01J37/08 ,  H01J37/317

    Abstract: An ion source assembly and method is provided for improving ion implantation performance. The ion source assembly has an ion source chamber and a source gas supply provides a molecular carbon source gas to the ion source chamber. An excitation source excites the molecular carbon source gas, forming carbon ions and atomic carbon. An extraction electrode extracts the carbon ions from the ion source chamber, forming an ion beam. A hydrogen peroxide co-gas supply provides hydrogen peroxide co-gas to the ion source chamber. The hydrogen peroxide co-gas decomposes and reacts with the atomic carbon, forming hydrocarbons within the ion source chamber. An inert gas is further introduced and ionized to counteract oxidation of a cathode due to the decomposition of the hydrogen peroxide. A vacuum pump removes the hydrocarbons, wherein deposition of atomic carbon is reduced and a lifetime of the ion source chamber is increased.

    Abstract translation: 提供了一种用于改善离子注入性能的离子源组件和方法。 离子源组件具有离子源室，并且源气体源将分子碳源气体提供给离子源室。 激发源激发分子碳源气体，形成碳离子和原子碳。 提取电极从离子源室提取碳离子，形成离子束。 过氧化氢辅助气体供应装置向离子源腔室提供过氧化氢辅助气体。 过氧化氢共同气体分解并与原子碳反应，在离子源室内形成碳氢化合物。 由于过氧化氢的分解，进一步引入惰性气体并离子化以抵消阴极的氧化。 真空泵去除烃，其中原子碳的沉积减少并且离子源室的寿命增加。

    ION IMPLANTATION SOURCE WITH TEXTURED INTERIOR SURFACES
    25.
    发明申请
    ION IMPLANTATION SOURCE WITH TEXTURED INTERIOR SURFACES 审中-公开
    离子植入源带有纹理的内部表面

    公开(公告)号：WO2015191311A1

    公开(公告)日：2015-12-17

    申请号：PCT/US2015/033220

    申请日：2015-05-29

    Applicant: AXCELIS TECHNOLOGIES, INC.

    Inventor： COLVIN, Neil ,  HSIEH, Tseh-Jen

    IPC: H01J27/08 ,  H01J37/08 ,  H01J37/317

    CPC classification number: H01J37/08 ,  H01J27/205 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/061

    Abstract: An ion source chamber 132 for an ion implementation system has a textured surfaced to reduce surface film delamination on the interior walls of the ion source chamber. The residual stresses originated from the thermal expansion mismatch due to temperature changes and the tensile residual stress between film and the substrate (liners). The textured feature alters the width to thickness ratio so that it will peel off when it reaches its fracture tensile stress. The machine textures surface increases the mechanical interlocking of the film that builds up on the surface of the ion source chamber, which delays delamination and reduces the size of the resulting flake thereby reducing the likelihood that the flake will bridge a biased component to a ground reference surface and correspondingly increases the life of the ion source 130.

    Abstract translation: 用于离子实施系统的离子源室132具有纹理表面，以减少离子源室的内壁上的表面膜分层。 由于温度变化引起的热膨胀失配和膜与衬底（衬垫）之间的拉伸残余应力产生的残余应力。 纹理特征改变宽度与厚度比，使其在达到其断裂拉伸应力时将剥离。 机器纹理表面增加了在离子源室的表面上形成的膜的机械互锁，这延迟了分层并且减小了所得薄片的尺寸，从而降低了薄片将偏置组件桥接到地面参考的可能性 表面并相应地增加离子源130的寿命。

    IMPLEMENTATION OF CO-GASES FOR GERMANIUM AND BORON ION IMPLANTS
    27.
    发明申请
    IMPLEMENTATION OF CO-GASES FOR GERMANIUM AND BORON ION IMPLANTS 审中-公开
    用于锗和硼离子植入物的气体的实施

    公开(公告)号：WO2012067653A1

    公开(公告)日：2012-05-24

    申请号：PCT/US2011/001913

    申请日：2011-11-17

    Applicant: AXCELIS TECHNOLOGIES, INC. ,  COLVIN, Neil ,  HSIEH, Tseh-Jen

    Inventor： COLVIN, Neil ,  HSIEH, Tseh-Jen

    IPC: H01J37/317

    CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/022

    Abstract: An ion implantation system for improving performance and extending lifetime of an ion source is disclosed. A fluorine-containing dopant gas source is introduced into the ion chamber along with one or more co-gases. The one or more co-gases can include hydrogen or krypton. The co-gases mitigate the effects caused by free fluorine ions in the ion source chamber which lead to ion source failure.

    Abstract translation: 公开了一种用于提高离子源的性能和延长寿命的离子注入系统。 含氟掺杂剂气体源与一种或多种共同气体一起引入离子室。 一种或多种共气体可以包括氢或氪。 共气体减轻离子源室中游离氟离子引起离子源失效的影响。

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