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    HYDROGEN BLEED GAS FOR AN ION SOURCE HOUSING
    3.
    发明申请
    HYDROGEN BLEED GAS FOR AN ION SOURCE HOUSING 审中-公开

    公开(公告)号：WO2019217953A1

    公开(公告)日：2019-11-14

    申请号：PCT/US2019/031970

    申请日：2019-05-13

    Applicant: AXCELIS TECHNOLOGIES, INC.

    Inventor： COLVIN, Neil ,  HSIEH, Tseh-Jen

    IPC: H01J37/08 ,  H01J37/317 ,  H01J37/32

    Abstract: A terminal system (102) for an ion implantation system has an ion source (108) with a housing and extraction electrode assembly having one or more aperture plates. A gas box (152) is electrically coupled to the ion source. A gas source (148) is within the gas box to provide a gas at substantially the same electrical potential as the ion source assembly. A bleed gas conduit (154, 172, 174) introduces the gas to a region internal to the housing of the ion source and upstream of at least one of the aperture plates. The bleed gas conduit has one or more feed-throughs extending through a body of the ion source assembly, such as a hole in a mounting flange of the ion source. The mounting flange may be a tubular portion having a channel. The bleed gas conduit can further have a gas distribution apparatus (172) defined as a gas distribution ring (174). The gas distribution ring can generally encircle the tubular portion of the mounting flange.

    MULTI-PIECE ELECTRODE APERTURE
    4.
    发明申请
    MULTI-PIECE ELECTRODE APERTURE 审中-公开
    多片电极孔

    公开(公告)号：WO2017127521A1

    公开(公告)日：2017-07-27

    申请号：PCT/US2017/014098

    申请日：2017-01-19

    Applicant: AXCELIS TECHNOLOGIES, INC.

    Inventor： COLVIN, Neil ,  HSIEH, Tseh-Jen ,  SILVERSTEIN, Paul

    IPC: H01J37/317 ,  H01J37/04 ,  H01J37/063 ,  H01J37/09 ,  H01J37/08 ,  H01J37/05 ,  H01J37/12 ,  H01J37/147

    CPC classification number: H01J37/045 ,  H01J37/04 ,  H01J37/05 ,  H01J37/08 ,  H01J37/09 ,  H01J37/12 ,  H01J37/147 ,  H01J37/3171 ,  H01J2237/083

    Abstract: An optics plate for an ion implantation system, the optics plate comprising a pair of aperture assemblies. Each pair of aperture assemblies respectively comprises a first aperture member, a second aperture member; and an aperture fastener, wherein the aperture fastener fastens the first aperture member to the second aperture member. An aperture tip may be also fastened to the second aperture member. One or more of the first aperture member, second aperture member, aperture tip, and aperture fastener is made of one or more of a refractory metal, tungsten, lanthanated tungsten alloy, yttrium tungsten alloy, and/or graphite and silicon carbide. The aperture assemblies may define an extraction electrode assembly, a ground electrode assembly, or other electrode assembly in the ion implantation system.

    Abstract translation: 一种用于离子注入系统的光学板，所述光学板包括一对孔组件。 每对孔组件分别包括第一孔构件，第二孔构件; 和孔眼紧固件，其中孔眼紧固件将第一光圈构件紧固到第二光圈构件。 孔顶端也可以固定到第二孔构件。 第一孔构件，第二孔构件，孔口顶端和孔眼紧固件中的一个或多个由难熔金属，钨，镧系钨合金，钇钨合金和/或石墨和碳化硅中的一种或多种制成。 孔组件可限定离子注入系统中的引出电极组件，接地电极组件或其他电极组件。

    HYDROGEN COGAS FOR CARBON IMPLANT
    5.
    发明申请
    HYDROGEN COGAS FOR CARBON IMPLANT 审中-公开
    用于碳素植入物的氢气

    公开(公告)号：WO2012067652A1

    公开(公告)日：2012-05-24

    申请号：PCT/US2011/001912

    申请日：2011-11-17

    Applicant: AXCELIS TECHNOLOGIES, INC. ,  COLVIN, Neil ,  HSIEH, Tseh-Jen

    Inventor： COLVIN, Neil ,  HSIEH, Tseh-Jen

    IPC: H01J37/317

    CPC classification number: H01J37/3171 ,  H01J27/022 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/08

    Abstract: A system, apparatus and method for increasing ion source lifetime in an ion implanter are provided. Oxidation of the ion source and ion source chamber poisoning resulting from a carbon and oxygen-containing source gas is controlled by utilizing a hydrogen co-gas, which reacts with free oxygen atoms to form hydroxide and water.

    Abstract translation: 提供了一种用于增加离子注入机中离子源寿命的系统，装置和方法。 通过利用与游离氧原子反应形成氢氧化物和水的氢气体来控制由含碳和含氧源气体产生的离子源和离子源室中毒的氧化。

    IN-VACUUM BEAM DEFINING APERTURE CLEANING FOR PARTICLE REDUCTION
    6.
    发明申请
    IN-VACUUM BEAM DEFINING APERTURE CLEANING FOR PARTICLE REDUCTION 审中-公开

    公开(公告)号：WO2011126538A3

    公开(公告)日：2011-10-13

    申请号：PCT/US2011/000484

    申请日：2011-03-16

    Applicant: AXCELIS TECHNOLOGIES INC. ,  COLVIN, Neil ,  ZHANG, Jincheng

    Inventor： COLVIN, Neil ,  ZHANG, Jincheng

    IPC: H01J37/317

    Abstract: A method and a system is provided for reducing particle contamination in an ion implantation system (100), wherein an ion implantation system having an ion source (120), mass analyzer (136), resolving aperture (138), decel suppression plate (146), and end station (106) is provided. An ion beam (114) is formed via the ion source, and a workpiece (110) is transferred between an external environment and the end station for ion implantation thereto. A decel suppression voltage (148) applied to the decel suppression plate is modulated concurrent with the workpiece transfer, therein causing the ion beam to expand and contract, wherein one or more surfaces of the resolving aperture and/or one or more components downstream of the resolving aperture are impacted by the ion beam, therein mitigating subsequent contamination of workpieces from previously deposited material residing on the one or more surfaces. The contamination can be mitigated by removing the previously deposited material or strongly adhering the previously deposited material to the one or more surfaces.

    SHIELDED GAS INLET FOR AN ION SOURCE
    7.
    发明申请
    SHIELDED GAS INLET FOR AN ION SOURCE 审中-公开

    公开(公告)号：WO2023076575A2

    公开(公告)日：2023-05-04

    申请号：PCT/US2022/048194

    申请日：2022-10-28

    Applicant: AXCELIS TECHNOLOGIES, INC.

    Inventor： COLVIN, Neil ,  BASSOM, Neil ,  ABESHAUS, Joshua

    IPC: H01J37/08 ,  H01J27/08 ,  H01J2237/006 ,  H01J2237/0213 ,  H01J2237/31701 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/32651 ,  H01J37/32724

    Abstract: An ion source has arc chamber having one or more radiation generating features, an arc chamber body enclosing an internal volume, and at least one gas inlet aperture defined therein. A gas source provides a gas such as a source species gas or a halide through the gas inlet aperture. The source species gas can be an aluminum-based ion source material such as dimethylaluminum chloride (DMAC). One or more shields positioned proximate to the gas inlet aperture provide a fluid communication between the gas inlet aperture and the internal volume, minimize a line-of-sight from the one or more radiation generating features to the gas inlet aperture, and substantially prevent thermal radiation from reaching the gas inlet aperture from the one or more radiation generating features.

    FLUORINE BASED MOLECULAR CO-GAS WHEN RUNNING DIMETHYLALUMINUM CHLORIDE AS A SOURCE MATERIAL TO GENERATE AN ALUMINUM ION BEAM
    8.
    发明申请
    FLUORINE BASED MOLECULAR CO-GAS WHEN RUNNING DIMETHYLALUMINUM CHLORIDE AS A SOURCE MATERIAL TO GENERATE AN ALUMINUM ION BEAM 审中-公开

    公开(公告)号：WO2022094381A1

    公开(公告)日：2022-05-05

    申请号：PCT/US2021/057529

    申请日：2021-11-01

    Applicant: AXCELIS TECHNOLOGIES, INC.

    Inventor： COLVIN, Neil ,  BASSOM, Neil ,  MOORE, Edward

    IPC: H01J37/08 ,  H01J37/317 ,  H01J27/08

    Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.

    LANTHANATED TUNGSTEN ION SOURCE AND BEAMLINE COMPONENTS
    9.
    发明申请
    LANTHANATED TUNGSTEN ION SOURCE AND BEAMLINE COMPONENTS 审中-公开
    镧系离子钨离子源和束线组件

    公开(公告)号：WO2017197378A1

    公开(公告)日：2017-11-16

    申请号：PCT/US2017/032603

    申请日：2017-05-15

    Applicant: AXCELIS TECHNOLOGIES, INC.

    Inventor： COLVIN, Neil ,  HSIEH, Tseh-Jen ,  SILVERSTEIN, Paul

    IPC: H01J37/08 ,  H01J37/317

    CPC classification number: H01J37/3002 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061

    Abstract: An ion implantation system is provided having one or more conductive components comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal. The conductive component may be a component of an ion source, such as one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate. The aperture plate may be associated with one or more of an extraction aperture, a suppression aperture and a ground aperture.

    Abstract translation: 提供了一种离子注入系统，其具有由一种或多种镧系元素的钨和难熔金属组成的一种或多种导电组分，该导电组分与预定百分比的稀土金属形成合金。 导电部件可以是离子源的部件，例如阴极，阴极护罩，推斥极，衬垫，孔板，电弧室主体和冲击板中的一个或多个。 孔板可以与提取孔，抑制孔和接地孔中的一个或多个相关联。

    SENSOR FOR ION IMPLANTER
    10.
    发明申请
    SENSOR FOR ION IMPLANTER 审中-公开

    公开(公告)号：WO2008045458A3

    公开(公告)日：2008-04-17

    申请号：PCT/US2007/021615

    申请日：2007-10-10

    Applicant: AXCELIS TECHNOLOGIES, INC. ,  LEE, W., Davis ,  COLVIN, Neil

    Inventor： LEE, W., Davis ,  COLVIN, Neil

    IPC: H01J37/244 ,  H01J37/317 ,  G01T1/29

    Abstract: A Faraday cup structure (110) for use with a processing tool. The cup ' structure has a conductive strike plate coupled to a circuit for monitoring ions striking the strike plate (120) to obtain an indication of the ion beam current. The electrically conductive strike plate is fronted by a mask (122) for dividing an ion beam intercepting cross section into regions or segments. The mask including walls extending to the strike plate for impeding ions reaching the sensor and particles dislodged from the sensor from entering into the evacuated region of the processing tool.

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