Integrated passive devices to reduce power supply voltage droop

    公开(公告)号:US10587195B2

    公开(公告)日:2020-03-10

    申请号:US15489798

    申请日:2017-04-18

    Applicant: Apple Inc.

    Abstract: A system that includes multiple integrated circuits is disclosed. A first integrated circuit of the system includes a plurality of circuit blocks, and a first circuit block of the plurality of circuit blocks includes a first power terminal. A second integrated circuit of the system includes multiple voltage regulation circuits, a second power terminal coupled to an output of a given voltage regulation circuit, and a third power terminal coupled to an input of the given voltage regulation circuit. A substrate, included in the system, includes a plurality of conductive paths, each of which includes a plurality of wires fabricated on a plurality of conductive layers. The system further includes a power management unit that may be configured to generate a power supply voltage at a fourth power terminal that is coupled to the third power terminal via a first conductive path of the plurality of conductive paths.

    Structure and method for sealing a silicon IC

    公开(公告)号:US12261132B2

    公开(公告)日:2025-03-25

    申请号:US18485709

    申请日:2023-10-12

    Applicant: Apple Inc.

    Abstract: Chip sealing structures and methods of manufacture are described. In an embodiment, a chip structure includes a main body area formed of a substrate, a back-end-of-the-line (BEOL) build-up structure spanning over the substrate, and chip edge sidewalls extending from a back surface of the substrate to a top surface of the BEOL build-up structure and laterally surrounding the substrate and the BEOL build-up structure. In accordance with embodiments, the chip structure may further include a conformal sealing layer covering at least a first chip edge sidewall of the chip edge sidewalls and a portion of the top surface of the BEOL build-up structure, and forming a lip around the top surface of the BEOL build-up structure.

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