-
公开(公告)号：AU5628398A
公开(公告)日：1998-05-21
申请号：AU5628398
申请日：1998-02-24
Applicant: CANON KK
Inventor： OHNISHI TOSHIKAZU , YAMANOBE MASATO , NOMURA ICHIRO , SUZUKI HIDETOSHI , BANNO YOSHIKAZU , ONO TAKEO , MITOME MASANORI
-
公开(公告)号：DE69126942D1
公开(公告)日：1997-09-04
申请号：DE69126942
申请日：1991-10-25
Applicant: CANON KK
Inventor： FUJII KAZUHITO , ONO TAKEO
Abstract: An optical device includes an asymmetric dual quantum well (ADQW) structure which is comprised of a plur ality(at least two) of different semiconductor quantum well layers coupled to each other. In the ADQW structure, the width of a deeper quantum well layer having a narrower band gap is made narrower than that of a less deeper quantum well layer having a wider band gap such that the shift of an exciton wavelength is scarcely caused due to the quantum confined Stark effect by the application of an electric field in a predetermined range. As a result, only a refractive index of the ADQW structure is changed, but an absorption factor is scarcely changed for a given range of wavelength by the application of the electric field. Further, there is provided a member for applying an electric field to the asymmetric dual quantum well structure.
-
公开(公告)号：AU681622B2
公开(公告)日：1997-09-04
申请号：AU5927794
申请日：1994-04-05
Applicant: CANON KK
-
公开(公告)号：AT155284T
公开(公告)日：1997-07-15
申请号：AT94105255
申请日：1994-04-05
Applicant: CANON KK
-
公开(公告)号：DE69109553D1
公开(公告)日：1995-06-14
申请号：DE69109553
申请日：1991-07-10
Applicant: CANON KK
Inventor： ONO TAKEO , OKUDA MASAHIRO
IPC: H01S5/062 , H01S5/10 , H01S5/12 , H01S5/34 , H01S5/50 , H04B10/291 , H01S3/103 , H01S3/25 , H01S3/085 , G02F1/015 , H04B10/00
Abstract: An optical semiconductor device with wavelength selectivity comprises a substrate (21), a collector layer (22) provided on said substrate and composed of a semiconductor having a first conductive type, a multiple quantum well layer (23) provided on said collector layer, a base layer (24,25,26) provided on said multiple quantum well layer (23) and composed of a semiconductor having a second conductive type, said base layer consisting of an active layer (25), and first and second semiconductor layers (24,26) with said active layer sandwiched and having a wider band gap than said active layer, said base layer (24,25,26) and said multiple quantum well layer (23) propagating the light, an emitter layer (27) provided on said base layer and composed of a semiconductor having the first conductive type, and a collector electrode (30), a base electrode (29,29') and an emitter electrode (28) electrically connected to said collector layer (22), base layer (24,25,26) and emitter layer (27), respectively.
-
Patent Agency Ranking
公开(公告)号：CA2137328A1
公开(公告)日：1995-06-11
申请号：CA2137328
申请日：1994-12-05
Applicant: CANON KK
Inventor： ONO TAKEO , MAJIMA MASAO , OUCHI TOSHIHIKO
IPC: H01S5/00 , B82Y20/00 , H01S5/042 , H01S5/062 , H01S5/0625 , H01S5/065 , H01S5/12 , H01S5/34 , H01S5/343 , H01S3/18 , H04B10/04
Abstract: A distributed feedback semiconductor laser selectively performs one of two oscillations in different polarization modes having different polarization planes. The laser includes a subtrate, a light waveguide formed on the substrate, which at least partially includes an active layer, a a diffraction grating formed around the waveguide, and an injecting unit for injecting a modulation current into a portion of the waveguide. The waveguide and the grating are constructed such that oscillation wavelengths of the polarization modes are different from each other and minimum values of threshold gain in the polarization modes near the Bragg wavelength are approximately equal to each other. The semiconductor laser can be driven by a minute modulation current and prevents degradation of response characteristics due to dynamic wavelength fluctuation in a high-frequency range when used in optical communication systems in which the switching of polarization mode is performed.
-
公开(公告)号：FR2604282B1
公开(公告)日：1993-03-05
申请号：FR8713117
申请日：1987-09-23
Applicant: CANON KK
Inventor： ONO TAKEO , SAITO FUMIHIKO , ODA HITOSHI , YONEDA KOU , SHINMI AKIRA , KANEKO TETSUYA , WATANABE NOBUO
-
公开(公告)号：GB2208143B
公开(公告)日：1992-03-04
申请号：GB8815505
申请日：1988-06-29
Applicant: CANON KK
Inventor： SAITO FUMIHIKO , ONO TAKEO , ODA HITOSHI , SHINMI AKIRA
-
公开(公告)号：GB2207312A
公开(公告)日：1989-01-25
申请号：GB8815504
申请日：1988-06-29
Applicant: CANON KK
Inventor： ONO TAKEO , ODA HITOSHI , SAITO FUMIHIKO , SHINMI AKIRA
Abstract: Method for transferring the Bloch line present in the magnetic wall of the magnetic domain formed in the magnetic thin film, along the magnetic wall is characterized by the steps of forming a predetermined stress distribution along the magnetic wall in the magnetic thin film, positioning the Bloch line to a predetermined position in the magnetic wall in accordance with the stress distribution, and applying a pulsive magnetic field normally to a film plane of the magnetic thin film in synchronism with the formation of the stress distribution. The Bloch line is transferred from the predetermined position to another position by the stress distribution formation step and the magnetic field application step.
-
公开(公告)号：DE3822328A1
公开(公告)日：1989-01-12
申请号：DE3822328
申请日：1988-07-01
Applicant: CANON KK
Inventor： ONO TAKEO , ODA HITOSHI , SAITO FUMIHIKO , SHINMI AKIRA
Abstract: Method for transferring the Bloch line present in the magnetic wall of the magnetic domain formed in the magnetic thin film, along the magnetic wall is characterized by the steps of forming a predetermined stress distribution along the magnetic wall in the magnetic thin film, positioning the Bloch line to a predetermined position in the magnetic wall in accordance with the stress distribution, and applying a pulsive magnetic field normally to a film plane of the magnetic thin film in synchronism with the formation of the stress distribution. The Bloch line is transferred from the predetermined position to another position by the stress distribution formation step and the magnetic field application step.
-
-
-
-
-
-
-
-
-
Search Results
194
records
(took 0.026 seconds)
