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    21.
    发明专利
    未知

    公开(公告)号：FR2393386A1

    公开(公告)日：1978-12-29

    申请号：FR7716676

    申请日：1977-06-01

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： DESTANNES LOUIS ,  DUCHENE JACQUES ,  MEYER ROBERT

    IPC: G02F1/1341 ,  G02F1/161 ,  G09X

    Abstract: The method consists in forming a first insulating plate coated with an electrode, in depositing at the periphery of the plate a wall formed of a first material which is chemically inert with respect to the film and fusible at a first temperature, in passing through the wall a filler tube of a second material having a higher melting point than the wall, in forming a second transparent insulating plate coated with a semitransparent electrode, in sealing the tube in the wall and the first and second plates on the wall by heating the cell elements to a temperature at least equal to the first temperature and lower than the melting point of the second material, then in allowing the cell elements to cool.

    22.
    发明专利
    未知

    公开(公告)号：DE69531220T2

    公开(公告)日：2004-05-27

    申请号：DE69531220

    申请日：1995-04-24

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： MEYER ROBERT ,  VAUDAINE PIERRE ,  RAMBAUD PHILIPPE

    IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

    Abstract: A micro-tip electron source has micro-tips, each of which consists of a first frusto-conical portion (20) of a first conductive material and a second conical tip portion deposited on the first portion and made of a second conductive material which can be thinned by selective etching w.r.t. the first material. Pref. the first material is Nb and the second material is Mo, Si, Cr, Fe or Ni. Also claimed is a cathodoluminescent display device including the above micro-tip electron source. Pref. the height of the first portion (20) is such that its top is at the same level as the lower plane (I) of the grids (10a) of the source. The micro-tips are pref. subjected to cleaning and the second tip portion is subjected to thinning by surface etching.

    23.
    发明专利
    未知

    公开(公告)号：DE69709827T2

    公开(公告)日：2002-08-29

    申请号：DE69709827

    申请日：1997-10-24

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： MEYER ROBERT ,  LEVIS MICHEL ,  SOURIAU JEAN-CHARLES

    IPC: H01J9/18 ,  H01J9/38 ,  H01J9/39 ,  H01J29/94

    Abstract: The method involves positioning, sealing (8), returning the device to the atmosphere, putting under vacuum and drying after which the getter (50, 51) is hydrogenated and the device closed. The getter may be introduced after sealing and return to the atmosphere or simply after sealing. Following absorption of hydrogen, the device is returned to normal temperatures and may be operated for a period to degas the phosphors during a re-pumping stage before closure. The getter may advantageously be kept cool until hydrogenation, then activated by inductive heating. The getter is zirconium or titanium with either one from vanadium, manganese, iron, cobalt, nickel or chromium or two from vanadium, manganese, iron, cobalt and chromium.

    24.
    发明专利
    未知

    公开(公告)号：DE69507418T2

    公开(公告)日：1999-07-15

    申请号：DE69507418

    申请日：1995-10-17

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： MEYER ROBERT ,  BOREL MICHEL ,  BRUNI MARIE-DOMINIQUE

    IPC: C25F3/02 ,  H01J1/304 ,  H01J9/02

    Abstract: The electron source mfg. procedure involves creating an insulating substrate (32) on which there is at least one cathodic conductor (34). This is covered by an amorphous doped silicon layer (36), an insulating layer (38) and a grid layer (40). A set of holes is formed through the grid layer and the insulating layer. A sacrificial layer (44) is formed on the grid layer by a method of chemical vapour deposition to form an electrolytic deposit. An electron emitting layer (52) is then formed on the assembly and the sacrificial layer is then eliminated by electrolysis, leaving micro-point electron sources (54). The sacrificial layer is chosen from the group of metals including Cr, Fe, Ni, Co, Cd, Cu, Au, Ag and may for example be an alloy of nickel and iron.

    25.
    发明专利
    未知

    公开(公告)号：DE69505914D1

    公开(公告)日：1998-12-17

    申请号：DE69505914

    申请日：1995-08-09

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： DELAPIERRE GILLES ,  MEYER ROBERT

    IPC: H01J1/30 ,  H01J1/304 ,  H01J9/02

    Abstract: A micro-tip electron source prodn. process involves: (a) producing a structure comprising an insulating substrate (10) bearing one or more cathode conductors (12) covered with an insulating layer (14) and then a conductive grid layer (16), holes (18) being formed through these layers (14,16) to each cathode conductor (12); and (b) forming a micro-tip of electron-emissive metal on the cathode conductor (12) in each hole (18), and an insulating protective layer (50) on the grid layer (16), depositing (pref. electrolytically) electron-emissive metal to overfill the holes, removing the protective layer and electrolytically etching the metal deposit (60) to form the micro-tips.

    29.
    发明专利
    未知

    公开(公告)号：FI912802A

    公开(公告)日：1991-12-14

    申请号：FI912802

    申请日：1991-06-11

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： MEYER ROBERT

    IPC: H01J1/30 ,  H01J1/304 ,  H01J

    Abstract: Electron source with microtip emissive cathodes having grating-like electrodes. These electrodes can either be cathode conductors (5) or grids (10). Specific application to the excitation of a display screen.

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