公开(公告)号：US20190022820A1

公开(公告)日：2019-01-24

申请号：US16039065

申请日：2018-07-18

Applicant: EBARA CORPORATION

Inventor： Toshifumi KIMBA ,  Masaki KINOSHITA ,  Yoichi SHIOKAWA

IPC: B24B37/005 ,  G01B11/06 ,  B24B49/12

Abstract: A polishing apparatus which can measure a film thickness with high accuracy without affecting a polishing rate of a wafer is disclosed. The polishing apparatus includes: a polishing head configured to press a wafer against a polishing pad; an illuminating fiber having a distal end disposed in a flow passage formed in the polishing table; a spectrometer configured to resolve reflected light from the wafer in accordance with wavelength and measure an intensity of the reflected light at each of wavelengths; a light-receiving fiber having a distal end disposed in the flow passage; a liquid supply line communicating with the flow passage; a gas supply line communicating with the flow passage; a liquid supply valve attached to the liquid supply line; a gas supply valve attached to the gas supply line; and an operation controller configured to control operations of the liquid supply valve and the gas supply valve.

公开(公告)号：US20180001438A1

公开(公告)日：2018-01-04

申请号：US15636343

申请日：2017-06-28

Applicant: EBARA CORPORATION

Inventor： Suguru SAKUGAWA ,  Toru MARUYAMA ,  Nobuyuki TAKAHASHI ,  Zhongxin WEN ,  Yoichi SHIOKAWA ,  Keita YAGI ,  Itsuki KOBATA ,  Tomohiko TAKEUCHI

IPC: B24B37/005 ,  H01L21/306 ,  B24B37/10

CPC classification number: B24B37/005 ,  B24B37/10 ,  H01L21/30625

Abstract: According to one aspect, a substrate processing apparatus is provided. The substrate processing apparatus includes a table provided with a substrate holding surface for holding a substrate, a pad for processing the substrate held on the table, a head for holding the pad, an actuator for moving the head in a direction perpendicular to the substrate holding surface of the table, and a mechanical stopper device for stopping a movement of the head in the direction perpendicular to the substrate holding surface.

公开(公告)号：US20170148655A1

公开(公告)日：2017-05-25

申请号：US15357706

申请日：2016-11-21

Applicant: EBARA CORPORATION

Inventor： Yoichi KOBAYASHI ,  Yoichi SHIOKAWA ,  Katsuhide WATANABE

IPC: H01L21/67 ,  H01L21/3105 ,  H01L21/66

CPC classification number: H01L21/67253 ,  B24B37/013 ,  B24B37/105 ,  B24B37/205 ,  B24B37/32 ,  B24B49/105 ,  B24B49/12 ,  H01L21/31053 ,  H01L21/67092 ,  H01L22/12 ,  H01L22/26

Abstract: A polishing method capable of obtaining a stable film thickness without being affected by a difference in measurement position is disclosed. The polishing method includes: rotating a polishing table that supports a polishing pad; pressing the surface of the wafer against the polishing pad; obtaining a plurality of film-thickness signals from a film thickness sensor during a latest predetermined number of revolutions of the polishing pad, the film thickness sensor being installed in the polishing table; determining a plurality of measured film thicknesses from the plurality of film-thickness signals; determining an estimated film thickness at a topmost portion of the raised portion based on the plurality of measured film thicknesses; and monitoring polishing of the wafer based on the estimated film thickness at the topmost portion of the raised portion.

公开(公告)号：US20170047237A1

公开(公告)日：2017-02-16

申请号：US15305088

申请日：2015-04-17

Applicant: EBARA CORPORATION

Inventor： Itsuki KOBATA ,  Keita YAGI ,  Katsuhide WATANABE ,  Yoichi SHIOKAWA ,  Toru MARUYAMA ,  Nobuyuki TAKAHASHI

IPC: H01L21/677 ,  H01L21/3105 ,  B24B37/20 ,  H01L21/67 ,  H01L21/683 ,  H01L21/306 ,  H01L21/321

Abstract: An object of the present invention is to improve a substrate processing apparatus using the CARE method.The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

Abstract translation: 本发明提供了一种用于在处理液体存在下使基板和催化剂彼此接触来研磨基板的加工对象区域的基板处理装置。 基板处理装置包括：基板保持单元，其被构造成保持基板;催化剂保持单元，其构造成保持催化剂;以及驱动单元，被配置为使所述基板保持单元和所述催化剂保持单元相对于所述处理对象区域移动 的基底和催化剂保持彼此接触。 催化剂小于底物。

公开(公告)号：US20150017887A1

公开(公告)日：2015-01-15

申请号：US14327522

申请日：2014-07-09

Applicant: EBARA CORPORATION

Inventor： Yoichi KOBAYASHI ,  Katsuhide WATANABE ,  Yoichi SHIOKAWA ,  Keita YAGI ,  Masaki KINOSHITA

IPC: B24B37/013 ,  G01J3/42 ,  G01B11/06

CPC classification number: B24B37/013 ,  G01B11/0625 ,  G01B11/0683 ,  G01B11/0691

Abstract: A polishing apparatus capable of achieving a highly-precise polishing result is disclosed. The polishing apparatus includes an in-line film-thickness measuring device configured to measure a film thickness of the substrate in a stationary state, and an in-situ spectral film-thickness monitor having a film thickness sensor disposed in a polishing table, the in-situ spectral film-thickness monitor being configured to subtract an initial film thickness, measured by the in-situ spectral film-thickness monitor before polishing of the substrate, from an initial film thickness, measured by the in-line film-thickness measuring device before polishing of the substrate, to determine a correction value, add the correction value to a film thickness that is measured when the substrate is being polished to obtain a monitoring film thickness, and monitor a progress of polishing of the substrate based on the monitoring film thickness.

Abstract translation: 公开了一种能够实现高精度抛光结果的抛光装置。 抛光装置包括：在静止状态下测量基板的膜厚的直列式膜厚测量装置，以及设置在抛光台中的具有膜厚度传感器的原位光谱膜厚监视器， - 平面光谱膜厚度监视器被配置为从由在线膜厚测量装置测量的初始膜厚度减去由基板抛光之前的原位光谱膜厚度监测器测量的初始膜厚度 在对基板进行研磨之前，为了确定修正值，将修正值与基板正在研磨时测定的膜厚相加，得到监视膜厚，并根据监视膜监视基板的研磨进度 厚度。