公开(公告)号：EP2357204A4

公开(公告)日：2012-06-27

申请号：EP09831789

申请日：2009-11-10

Applicant: FUJIFILM CORP

Inventor： WADA KENJI ,  WATANABE KATSUYUKI ,  YAMAMOTO KEIJI

IPC: C08F8/00 ,  C07F7/21 ,  C08F30/08 ,  C08L43/04 ,  C08L83/04 ,  C09D183/04 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/5329 ,  C07F7/20 ,  C07F7/21 ,  C08F230/08 ,  C08G77/045 ,  C08G77/12 ,  C08G77/20 ,  C08G77/50 ,  C08L83/04 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A composition for film formation which can form a film suitable for use as an interlayer dielectric in a semiconductor device, etc. and having an appropriate even thickness and can give a film having excellent characteristics including permittivity and Young's modulus; and a dielectric film obtained from the film-forming composition. The composition contains a compound (X) having a functional group which is partly eliminated by heating, irradiation with light, irradiation with radiation, or a combination thereof to generate volatile matter and yield an unsaturated group in the remaining part of the functional group.

公开(公告)号：EP2177506A4

公开(公告)日：2011-06-22

申请号：EP08827323

申请日：2008-08-11

Applicant: FUJIFILM CORP

Inventor： TAKAHASHI HIDENORI ,  WADA KENJI ,  KAMIMURA SOU

IPC: G03F7/004 ,  C07C69/716 ,  C07C309/65 ,  C07C309/73 ,  C07C309/74 ,  C07C311/06 ,  C07C317/44 ,  H01L21/027

CPC classification number: C07C309/72 ,  C07C69/716 ,  C07C309/65 ,  C07C309/74 ,  C07C311/48 ,  C07C317/44 ,  C07C317/46 ,  C07C323/20 ,  C07C2601/14 ,  C07C2602/08 ,  C07C2602/10 ,  C07C2602/42 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2041

公开(公告)号：JP2012014021A

公开(公告)日：2012-01-19

申请号：JP2010151499

申请日：2010-07-01

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： WADA KENJI ,  OTA MASAKI ,  KODAMA KUNIHIKO

IPC: G03F7/075 ,  C08F2/50 ,  C08F30/08 ,  C08F275/00 ,  C08F290/06 ,  C08F299/08 ,  G03F7/031 ,  G03F7/32

CPC classification number: G03F7/0757 ,  G03F7/0388 ,  G03F7/091 ,  G03F7/325 ,  Y10T428/24802

Abstract: PROBLEM TO BE SOLVED: To provide a photosensitive composition and a pattern forming material that can give a patterned film with high resolution, the film having a good coating surface state, a low refractive index, and little change in the refractive index even under a high temperature condition (performances suitable, for example, for an antireflection film in an optical device) and the film having a low dielectric constant and a high Young's modulus (performances suitable, for example, for an interlayer insulating film in a semiconductor element device or the like), to provide a photosensitive film, a pattern forming method and a patterned film using the composition, and further, to provide an antireflection film and an insulating film produced by using the photosensitive composition, and an optical device and electronic device using these films.SOLUTION: The photosensitive composition or the pattern forming material contains: (A) a polymer obtained from silsesquioxanes composed of one or more cage type silsesquioxane compounds expressed by formula (1):(RSiO); and (B) a photopolymerization initiator. The present invention also discloses a photosensitive film, patterned film, antireflection film, insulating film, optical device and electronic device using the composition. In formula (1), R each independently represents an organic group, and at least two of R represent polymerizable groups; a represents an integer of 8 to 16; and the plurality of R may be identical to or different from one another. However, the polymer includes a polymerizable group derived from the cage type silsesquioxane compound remaining therein.

Abstract translation: 要解决的问题：为了提供能够以高分辨率得到图案化膜的光敏组合物和图案形成材料，该膜具有良好的涂布表面状态，低折射率和均匀的折射率变化 在高温条件下（例如适用于光学装置中的抗反射膜的性能）和具有低介电常数和高杨氏模量的膜（适用于半导体元件中的层间绝缘膜的性能 装置等），使用该组合物提供感光膜，图案形成方法和图案化膜，并且还提供使用该光敏组合物制备的抗反射膜和绝缘膜，以及光学装置和电子装置 使用这些电影。 光敏组合物或图案形成材料包含：（A）由由式（1）表示的一种或多种笼型倍半硅氧烷化合物的倍半硅氧烷获得的聚合物:( RSiO 1.5 ） a ; 和（B）光聚合引发剂。 本发明还公开了使用该组合物的感光膜，图案化膜，抗反射膜，绝缘膜，光学器件和电子器件。 在式（1）中，R各自独立地表示有机基团，R中的至少两个表示可聚合基团; a表示8〜16的整数， 并且多个R可以彼此相同或不同。 然而，聚合物包括衍生自保留在其中的笼型倍半硅氧烷化合物的可聚合基团。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010053292A

公开(公告)日：2010-03-11

申请号：JP2008221821

申请日：2008-08-29

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： ARAYAMA KYOHEI ,  WADA KENJI ,  INABE HARUKI

IPC: C08G61/02 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming an insulating film which can form a film having a low dielectric constant and high heat-resistance, the insulating film obtained by using the composition for forming the insulating film, a method for manufacturing the insulating film using the composition for forming the insulating film, and an electronic device having the insulating film as a layer-constituting layer.
SOLUTION: The composition for forming the insulating film contains a polymer having a repeating unit expressed by general formula (1) (wherein, X expresses a cage structure, Y expresses an aromatic hydrocarbon group, R
1 expresses an alkyl group, R
2 expresses a substituent, (a) expresses an integer of 1-18, b expresses an integer of 0-6, and * expresses a bonding position).
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种用于形成能够形成具有低介电常数和高耐热性的膜的绝缘膜的组合物，通过使用用于形成绝缘膜的组合物而获得的绝缘膜， 使用用于形成绝缘膜的组合物制造绝缘膜，以及具有绝缘膜作为层构成层的电子器件。 解决方案：用于形成绝缘膜的组合物含有具有由通式（1）表示的重复单元的聚合物（其中，X表示笼结构，Y表示芳族烃基，R 1 表示烷基，R 2表示取代基，（a）表示1-18的整数，b表示0-6的整数，*表示键合位置）。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009080161A

公开(公告)日：2009-04-16

申请号：JP2007247248

申请日：2007-09-25

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： HOSHINO WATARU ,  WADA KENJI

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a photosensitive composition excellent in sensitivity, forming a good pattern profile and causing few development defects, a pattern forming method using the photosensitive composition and a compound in the photosensitive composition, and to provide a photosensitive composition suitable for immersion exposure because the above properties are good even in immersion exposure, a pattern forming method using the photosensitive composition and a compound in the photosensitive composition. SOLUTION: The photosensitive composition includes (A) a resin of which solubility in an alkali developer increases under the action of an acid and (A') a resin which includes a repeating unit (a0) having a triphenylsulfonium structure represented by a specific general formula, wherein the resin (A) and/or the resin (A') is a resin which includes a repeating unit (a1) having a lactone structure and a cyano group. The pattern forming method using the photosensitive composition and the compound in the photosensitive composition are also provided. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供灵敏度优异，形成良好的图案轮廓并且导致很少的显影缺陷的感光组合物，使用光敏组合物和感光组合物中的化合物的图案形成方法，并提供感光组合物 因为上述性能即使在浸渍曝光中也是良好的，使用感光性组合物的图案形成方法和感光性组合物中的化合物也适用于浸渍曝光。 光敏组合物包括（A）在碱性显影剂中的溶解度在酸的作用下增加的树脂和（A'）树脂，其包含具有由以下物质表示的三苯基锍结构的重复单元（a0） 其中树脂（A）和/或树脂（A'）是包含具有内酯结构和氰基的重复单元（a1）的树脂。 还提供了使用光敏组合物和感光组合物中的化合物的图案形成方法。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009058949A

公开(公告)日：2009-03-19

申请号：JP2008200245

申请日：2008-08-01

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KAMIMURA SATOSHI ,  KAWANISHI YASUHIRO ,  WADA KENJI ,  TSUCHIMURA TOMOTAKA

IPC: G03F7/004 ,  C07D333/76 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  Y10S430/106

Abstract: PROBLEM TO BE SOLVED: To provide: a positive resist composition excellent in sensitivity, resolution, roughness, pattern profile and outgassing property; a compound for use in the positive resist composition; and a pattern-forming method using the positive resist composition, with respect to a positive resist composition for use in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes and a pattern-forming method using the positive resist composition. SOLUTION: The compound is a triarylsulfonium compound which has a sulfonium cation having a substituent containing an alcoholic hydroxyl group and an anion containing a proton acceptor functional group. The positive resist composition includes the compound. The pattern-forming method uses the positive resist composition. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供：灵敏度，分辨率，粗糙度，图案轮廓和除气性优异的正性抗蚀剂组合物; 用于正性抗蚀剂组合物的化合物; 以及使用正性抗蚀剂组合物的图案形成方法相对于用于半导体的制造方法中的正性抗蚀剂组合物，例如在制造液晶，热敏头等的电路基板中，或在 其他光制造工艺和使用正性抗蚀剂组合物的图案形成方法。 解决方案：化合物是具有含有醇羟基的取代基的锍阳离子和含有质子受体官能团的阴离子的三芳基锍化合物。 正型抗蚀剂组合物包括该化合物。 图案形成方法使用正性抗蚀剂组合物。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009053688A

公开(公告)日：2009-03-12

申请号：JP2008195372

申请日：2008-07-29

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TARUYA SHINJI ,  TSUBAKI HIDEAKI ,  WADA KENJI

IPC: G03F7/004 ,  C08F220/10 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/2022 ,  G03F7/2041 ,  Y10S430/111

Abstract: PROBLEM TO BE SOLVED: To provide a positive resist composition which is applicable even to a multiple exposure process in which exposure is performed two or more times on the same resist film, and which ensures a fine pattern profile, and to provide a pattern forming method.
SOLUTION: The positive resist composition includes: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin of which solubility in an alkali developer increases under an action of an acid; (C) a compound capable of decomposing under an action of an acid to generate an acid; and (D) a compound which itself acts as a base for the acids generated from the component (A) and the component (C) but decomposes upon irradiation with actinic rays or radiation to lose a basicity for the acids generated from the component (A) and the component (C). The pattern forming method uses the positive resist composition.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种正性抗蚀剂组合物，其即使适用于在相同的抗蚀剂膜上进行两次或更多次曝光并且确保精细图案轮廓的多次曝光工艺，并且可以提供 图案形成方法。 正型抗蚀剂组合物包括：（A）能够在光化射线或辐射照射时能够产生酸的化合物; （B）在碱性显影剂中的溶解度在酸的作用下增加的树脂; （C）能够在酸的作用下分解以产生酸的化合物; 和（D）本身作为由组分（A）和组分（C）产生的酸的碱的化合物，但是在用光化射线或辐射照射时分解，以失去由组分（A）产生的酸的碱度 ）和组分（C）。 图案形成方法使用正性抗蚀剂组合物。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009048182A

公开(公告)日：2009-03-05

申请号：JP2008187728

申请日：2008-07-18

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TARUYA SHINJI ,  WADA KENJI ,  TSUBAKI HIDEAKI

IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/38

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method using a positive resist composition with a favorable pattern resolution property and line width roughness, and suiting multiple exposure, in a multiple exposure process carrying out exposure a plurality of times on the same resist film. SOLUTION: The positive resist composition contains (A) a compound generating acid by irradiation of an active light ray or radiation, and (B) 80 mol.% or more of a copolymerization component not having an aromatic base. It contains resin with solubility with respect to an alkali developing solution increased by action of the acid, and (C) a compound decomposed by the action of the acid and generating an acid. An absolute value of a difference of pKa of the acid generated from the (A) component and the acid generated from the (C) component is 2 or less, and an absolute value of a difference of molecular weights is 50 or less. In the pattern forming method, by using the composition, exposure is carried out plural times with respect to the same resist film, and it has a process of heating the resist film at least once between exposure and exposure. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种使用正性抗蚀剂组合物的图案形成方法，其具有良好的图案分辨率和线宽粗糙度，并且适合多次曝光，在多次曝光过程中对其进行多次曝光 抗拒膜。 解决方案：正型抗蚀剂组合物包含（A）通过活性光线或辐射的照射产生酸的化合物，和（B）不含芳香族基团的共聚成分的80摩尔％以上。 它含有相对于通过酸的作用而增加的碱性显影溶液的溶解度的树脂，和（C）通过酸的作用分解并产生酸的化合物。 由（A）成分产生的酸和由（C）成分产生的酸的pKa的差的绝对值为2以下，分子量差的绝对值为50以下。 在图案形成方法中，通过使用该组合物，相对于相同的抗蚀剂膜进行多次曝光，并且具有在曝光和曝光之间至少一次加热抗蚀剂膜的工艺。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008281975A

公开(公告)日：2008-11-20

申请号：JP2007197840

申请日：2007-07-30

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： HOSHINO WATARU ,  TARUYA SHINJI ,  WADA KENJI ,  TSUBAKI HIDEAKI ,  MIZUTANI KAZUYOSHI

IPC: G03F7/30 ,  C08F20/10 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for stably forming a high-accuracy fine pattern to be used in the production process of a semiconductor such as IC, in the production of a circuit board of liquid crystal, thermal head and the like or in other photofabrication processes, a resist composition to be used in the method, a developing solution to be used in the method and a rinsing solution to be used in the method. SOLUTION: The pattern forming method includes: (1) coating a resist composition including a resin that includes a specific repeating unit and increases the polarity by the action of an acid, wherein the composition decreases the solubility in a negative developing solution upon irradiation with actinic rays or radiation; (2) exposing; and (3) developing with a negative developing solution. There are also provided the resist composition to be used in the method, the developing solution to be used in the method and the rinsing solution to be used in the method. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种稳定地形成用于诸如IC的半导体的制造过程中的高精度精细图案的方法，在制造液晶电路板，热敏头和 或其他光加工方法中使用的抗蚀剂组合物，该方法中使用的显影液和该方法中使用的漂洗溶液。 解决方案：图案形成方法包括：（1）涂覆包含特定重复单元的树脂的抗蚀剂组合物，并通过酸的作用增加极性，其中组合物降低在显影液中的溶解度， 用光化射线或辐射照射; （2）曝光; 和（3）用负显影液显影。 还提供了该方法中使用的抗蚀剂组合物，该方法中使用的显影液和该方法中使用的漂洗溶液。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008233877A

公开(公告)日：2008-10-02

申请号：JP2008029397

申请日：2008-02-08

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： HOSHINO WATARU ,  WADA KENJI

IPC: G03F7/038 ,  C08K5/00 ,  C08K5/378 ,  C08L101/12 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a negative resist composition ensuring good resolution and reduced collapse of a fine line pattern not only in normal exposure (dry exposure) but in immersion exposure, and to provide a pattern forming method using the above composition. SOLUTION: The negative resist composition includes: (A) a compound having at least one episulfide structure (a three-membered ring structure comprising two carbon atoms and one sulfur atom); (B) an alkali-soluble resin; and (C) a compound generating an acid upon irradiation with actinic rays or radiation. The composition is used for the pattern forming method. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种负型抗蚀剂组合物，不仅在正常曝光（干式曝光）中，而且在浸渍曝光中，确保良好的分辨率和细小图案的塌缩，并且提供使用上述组合物的图案形成方法 。 阴离子抗蚀剂组合物包括：（A）具有至少一个环硫结构的化合物（包含两个碳原子和一个硫原子的三元环结构）; （B）碱溶性树脂; 和（C）在用光化射线或辐射照射时产生酸的化合物。 该组合物用于图案形成方法。 版权所有（C）2009，JPO＆INPIT