公开(公告)号：WO2010061977A3

公开(公告)日：2010-11-18

申请号：PCT/JP2009070372

申请日：2009-11-27

Applicant: FUJIFILM CORP ,  KAMIMURA SOU ,  TARUTANI SHINJI

Inventor： KAMIMURA SOU ,  TARUTANI SHINJI

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

CPC classification number: G03F7/40 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2024 ,  G03F7/2041 ,  G03F7/325

Abstract: A pattern forming method, includes: (i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing a polarity by an action of an acid to decrease a solubility in an organic solvent-containing developer and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) an exposure step; (iii) a development step using an organic solvent-containing developer; and (iv) a washing step using a rinsing solution, wherein in the step (iv), a rinsing solution containing at least either the solvent S1 or S2 as defined in the specification is used.

Abstract translation: 图案形成方法包括：（i）从用于有机溶剂基显影的抗蚀剂组合物形成抗蚀剂膜的步骤，所述抗蚀剂组合物含有（A）能够通过酸的作用增加极性的树脂以降低 在含有机溶剂的显影剂中的溶解度和（B）在用光化射线或辐射照射时能够产生酸的化合物; （ii）曝光步骤; （iii）使用含有机溶剂的显影剂的显影步骤; 和（iv）使用漂洗溶液的洗涤步骤，其中在步骤（iv）中，使用至少含有说明书中所定义的溶剂S1或S2的冲洗溶液。

公开(公告)号：SG186712A1

公开(公告)日：2013-02-28

申请号：SG2012091492

申请日：2011-02-24

Applicant: FUJIFILM CORP

Inventor： IWATO KAORU ,  KATAOKA SHOHEI ,  TARUTANI SHINJI ,  KAMIMURA SOU ,  KATO KEITA ,  ENOMOTO YUICHIRO ,  MIZUTANI KAZUYOSHI ,  TSUCHIHASHI TORU ,  FUJII KANA

Abstract: Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.

公开(公告)号：SG184290A1

公开(公告)日：2012-11-29

申请号：SG2012071619

申请日：2011-03-25

Applicant: FUJIFILM CORP

Inventor： KATAOKA SHOHEI ,  IWATO KAORU ,  KAMIMURA SOU ,  TSUCHIHASHI TORU ,  ENOMOTO YUICHIRO ,  FUJII KANA ,  MIZUTANI KAZUYOSHI ,  TARUTANI SHINJI ,  KATO KEITA

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa≧−1.5 when exposed to actinic rays or radiation.

公开(公告)号：SG182354A1

公开(公告)日：2012-08-30

申请号：SG2012049441

申请日：2011-01-07

Applicant: FUJIFILM CORP

Inventor： ENOMOTO YUICHIRO ,  TARUTANI SHINJI ,  KAMIMURA SOU ,  IWATO KAORU ,  KATO KEITA ,  SHIBUYA AKINORI

Abstract: Provided is a pattern forming method comprising (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (D) a solvent, and (G) a compound having at least either one of a fluorine atom and a silicon atom and having basicity or being capable of increasing the basicity by the action of an acid.

公开(公告)号：SG190734A1

公开(公告)日：2013-07-31

申请号：SG2013041884

申请日：2011-11-29

Applicant: FUJIFILM CORP

Inventor： KATO KEITA ,  FUJII KANA ,  KAMIMURA SOU ,  IWATO KAORU

Abstract: A negative pattern forming method, includes: (i) forming a film having a film thickness of 200 nm or more from a chemical amplification resist composition containing (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) for a developer containing one or more organic solvents, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film with a developer containing one or more organic solvents.

公开(公告)号：SG183808A1

公开(公告)日：2012-10-30

申请号：SG2012061438

申请日：2011-03-25

Applicant: FUJIFILM CORP

Inventor： KATO KEITA ,  TARUTANI SHINJI ,  TSUCHIHASHI TORU ,  KAMIMURA SOU ,  ENOMOTO YUICHIRO ,  FUJII KANA ,  IWATO KAORU ,  KATAOKA SHOHEI ,  MIZUTANI KAZUYOSHI

Abstract: Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and &Dgr;SP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent. &Dgr;SP=SPF-SPI •••(1)

公开(公告)号：SG176867A1

公开(公告)日：2012-01-30

申请号：SG2011092947

申请日：2010-06-14

Applicant: FUJIFILM CORP

Inventor： ENOMOTO YUICHIRO ,  KAMIMURA SOU ,  TARUTANI SHINJI

Abstract: A pattern forming method, including: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using a developer containing an organic solvent, wherein the chemical amplification resist composition contains: (A) a resin capable of decreasing a solubility of the resin (A) in the developer containing an organic solvent by an action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a basic compound or ammonium salt compound whose basicity decreases upon irradiation with an actinic ray or radiation, and a resist composition used for the pattern forming method and a resist film formed from the resist composition are provided.

公开(公告)号：SG171848A1

公开(公告)日：2011-07-28

申请号：SG2011038767

申请日：2009-11-27

Applicant: FUJIFILM CORP

Inventor： KAMIMURA SOU ,  TARUTANI SHINJI

Abstract: A pattern forming method, includes: (i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing a polarity by an action of an acid to decrease a solubility in an organic solvent-containing developer and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) an exposure step; (iii) a development step using an organic solvent-containing developer; and (iv) a washing step using a rinsing solution, wherein in the step (iv), a rinsing solution containing at least either the solvent S1 or S2 as defined in the specification is used.

公开(公告)号：EP2521941A4

公开(公告)日：2013-10-23

申请号：EP11731870

申请日：2011-01-07

Applicant: FUJIFILM CORP

Inventor： ENOMOTO YUICHIRO ,  TARUTANI SHINJI ,  KAMIMURA SOU ,  IWATO KAORU ,  KATO KEITA ,  SHIBUYA AKINORI

IPC: G03F7/004 ,  C08F20/34 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  G03F7/38 ,  H01L21/027

CPC classification number: G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/2041

公开(公告)号：EP2577397A4

公开(公告)日：2014-03-05

申请号：EP11786732

申请日：2011-05-20

Applicant: FUJIFILM CORP

Inventor： IWATO KAORU ,  TAKAHASHI HIDENORI ,  HIRANO SHUJI ,  KAMIMURA SOU ,  KATO KEITA

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32

CPC classification number: G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/40 ,  Y10T428/24