公开(公告)号：CA2512699A1

公开(公告)日：2004-07-29

申请号：CA2512699

申请日：2004-01-05

Applicant: HONEYWELL INT INC

Inventor： SCULLARD TIMOTHY LOUIS ,  HORNING ROBERT D ,  MCDONALD ROBINSON

IPC: B81B3/00 ,  B81C1/00

Abstract: A method for controlling bow in wafers (50) which utilize doped layers is described. The method includes depositing a silicon-germanium layer (52) ont o a substrate (14), depositing an undoped buffer layer (56) onto the silicon- germanium layer, and depositing a silicon-boron layer (58) onto the undoped layer.

公开(公告)号：AU2004204858A1

公开(公告)日：2004-07-29

申请号：AU2004204858

申请日：2004-01-05

Applicant: HONEYWELL INT INC

Inventor： SCULLARD TIMOTHY LOUIS ,  MCDONALD ROBINSON ,  HORNING ROBERT D

IPC: B81B3/00 ,  B81C1/00

Abstract: A method for controlling bow in wafers which utilize doped layers is described. The method includes depositing a silicon-germanium layer onto a substrate, depositing an undoped buffer layer onto the silicon-germanium layer, and depositing a silicon-boron layer onto the undoped layer.

公开(公告)号：AU2003268113A8

公开(公告)日：2004-02-23

申请号：AU2003268113

申请日：2003-08-05

Applicant: HONEYWELL INT INC

Inventor： HORNING ROBERT D

IPC: B81B7/02 ,  B81C1/00 ,  H01L21/306 ,  H01L29/84

Abstract: A microelectromechanical device is formed in a silicon semiconductor substrate. A metalization layer is formed on a glass wafer. A metal cap layer is then formed on the metalization layer, such that combined layers have a small surface work function that is less than approximately 5.17 eV. The semiconductor substrate is anodically bonded to the glass wafer, and then etched to remove silicon from the structures without significant excess etching of the microelectromechanical device, thus maintaining good control over critical dimensions of the microelectromechanical device.

公开(公告)号：AU2002242056A1

公开(公告)日：2002-08-12

申请号：AU2002242056

申请日：2002-01-31

Applicant: HONEYWELL INT INC

Inventor： HORNING ROBERT D ,  JOHNSON BURGESS R ,  COLE BARRETT E ,  BONNE ULRICH

IPC: H01J3/02 ,  H01J1/13

Abstract: A microcathode which integrates both an electron emitter, or cathode, and an extractor electrode. The electron emitter is attached to the back side of a thin film microstructure on a first surface of a substrate. Electrons are emitted from the electron emitter and into a via extending through the substrate. An electron beam is formed which is pulled through the via and out of the microcathode by an extractor electrode on a second surface of the substrate. The extractor electrode modulates the electron beam current, defines the beam profile, and accelerates the electrons toward an anode located outside of the microcathode. Microcathode of this invention are particularly suitable as electron emitting devices useful for various types of electron beam utilizing equipment such as flat cathode ray tube displays, microelectronic vacuum tube amplifiers, electron beam exposure devices and the like.

公开(公告)号：AU8113901A

公开(公告)日：2002-02-18

申请号：AU8113901

申请日：2001-08-07

Applicant: HONEYWELL INT INC

Inventor： CABUZ CLEOPATRA ,  HORNING ROBERT D ,  ERDMANN FRANCIS M ,  GLENN MAX C

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/308 ,  H01L29/84

Abstract: Layers of boron-doped silicon having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near the top and bottom surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers are substantially balanced, thereby resulting in layers with reduced out-of-plane curvature.