公开(公告)号：WO0212115A3

公开(公告)日：2003-01-09

申请号：PCT/US0124723

申请日：2001-08-07

Applicant: HONEYWELL INT INC

Inventor： CABUZ CLEOPATRA ,  HORNING ROBERT D ,  ERDMANN FRANCIS M ,  GLENN MAX C

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/308 ,  H01L29/84 ,  H01L21/22 ,  H01L21/20

CPC classification number: B81C1/00365 ,  B81C2201/0164 ,  Y10T428/21 ,  Y10T428/2495

Abstract: Layers of boron-doped silicon (36) having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near th etop (38) and bottom (40) surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers (36) are substantially balanced, thereby resulting in layers (36) with reduced out-of-plane curvature.

Abstract translation: 公开了具有减小的平面外曲率的硼掺杂硅（36）的层。 这些层在顶部（38）和底部（40）表面附近具有基本相等的硼浓度。 由于相反的浓度基本相等，所以层（36）上的压缩应力基本平衡，从而导致具有减小的面外曲率的层（36）。

公开(公告)号：AU8113901A

公开(公告)日：2002-02-18

申请号：AU8113901

申请日：2001-08-07

Applicant: HONEYWELL INT INC

Inventor： CABUZ CLEOPATRA ,  HORNING ROBERT D ,  ERDMANN FRANCIS M ,  GLENN MAX C

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/308 ,  H01L29/84

Abstract: Layers of boron-doped silicon having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near the top and bottom surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers are substantially balanced, thereby resulting in layers with reduced out-of-plane curvature.