公开(公告)号：JP2005345737A

公开(公告)日：2005-12-15

申请号：JP2004164956

申请日：2004-06-02

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： MITSUI HIDEAKI

IPC: B32B9/00 ,  B32B17/06 ,  G03C5/00 ,  G03F1/32 ,  G03F1/34 ,  G03F1/54 ,  G03F1/60 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  G03F1/14 ,  G03F1/08

CPC classification number: G03F1/32 ,  G03F1/34

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a phase shift mask that can contribute to a finer circuit pattern and higher accuracy. SOLUTION: A phase shift mask 20 is obtained by: using a phase shift mask blank 10 as a raw material, prepared by forming an ultra-thin film (chromium nitride film) 2 on a quartz substrate 1 for forming a phase shift pattern 1P and forming a resist film 3 thereon; then forming a resist pattern 3P in the resist film 3; etching the ultra-thin film 2 by using the resist pattern as a mask to form an ultra-thin film pattern 2P; etching the quartz substrate 1 by using the ultra-thin film pattern 2P as a mask to form a phase shift pattern 1P; forming a light-shielding film 4 on the substrate 1 where the phase shift pattern 1P is formed and the resist pattern 3 is removed; and selectively etching the light-shielding film 4 by using a resist 5 to expose the phase shift pattern 1P while leaving the light-shielding portion 4A in a required position. The film thickness of the ultra-thin film 2 is determined to be as thin as possible necessary to form the phase shift pattern in the quartz substrate 1 by using the ultra-thin film pattern 2P as a mask. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种制造可以有助于更精细的电路图案和更高精度的相移掩模的方法。 解决方案：通过以下方式获得相移掩模20：通过在用于形成相移的石英基板1上形成超薄膜（氮化铬膜）2而制备的相移掩模坯料10作为原料 图案1P并在其上形成抗蚀剂膜3; 然后在抗蚀剂膜3中形成抗蚀剂图案3P; 通过使用抗蚀剂图案作为掩模来蚀刻超薄膜2以形成超薄膜图案2P; 通过使用超薄膜图案2P作为掩模来蚀刻石英衬底1以形成相移图案1P; 在形成有相移图案1P的基板1上形成遮光膜4，除去抗蚀剂图案3; 并且通过使用抗蚀剂5选择性地蚀刻遮光膜4，以在使遮光部4A保持在所需位置的同时露出相移图案1P。 通过使用超薄膜图案2P作为掩模，确定超薄膜2的膜厚度尽可能薄以形成石英基板1中的相移图案。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2003322951A

公开(公告)日：2003-11-14

申请号：JP2002128056

申请日：2002-04-30

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： MITSUI HIDEAKI ,  OKUBO AKIRA

IPC: G03F1/32 ,  G03F1/60 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  G03F1/08 ,  G03F1/14

Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a lithography mask by which end detection accuracy in dry etching is enhanced by detecting the end of dry etching by a method different from measurement of an optical characteristic.
SOLUTION: In the method for producing a lithography mask including a step in which a thin film comprising one or more layers formed on a substrate is dry-etched in a required shape to form a fine pattern, at least one layer in the thin film contains a specific element not contained in another layer just under the layer or in the substrate and the pattern forming step includes a step of detecting the end of dry etching of the specific element-containing layer by a method for detecting the specific element in the dry etching.
COPYRIGHT: (C)2004,JPO

Abstract translation: 解决的问题：提供一种光刻掩模的制造方法，通过利用与光学特性的测量不同的方法检测干蚀刻的结束来提高干蚀刻中的末端检测精度。 解决方案：在用于生产光刻掩模的方法中，包括以下步骤：将形成在基板上的一层或多层的薄膜干燥蚀刻成所需形状以形成精细图案，至少在 薄膜包含不包含在刚好在层或衬底中的另一层中的特定元件，并且图案形成步骤包括通过用于检测特定元素含量层的干法蚀刻的结束的步骤， 干蚀刻。 版权所有（C）2004，JPO

公开(公告)号：JP2003280168A

公开(公告)日：2003-10-02

申请号：JP2002082021

申请日：2002-03-22

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SHIODA YUUKI ,  NOZAWA JUN ,  OKUBO AKIRA ,  MITSUI HIDEAKI

IPC: G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  G03F1/80 ,  G03F7/20 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a halftone phase shifting mask capable of transferring a high-precision transfer pattern. SOLUTION: In a halftone phase shifting mask blank 1 having on a transparent substrate a halftone phase shifter film for forming a halftone phase shifter portion, the halftone phase shifter film 5 comprises an upper layer 4 comprising a material consisting essentially of silicon, oxygen and nitrogen and a lower layer 3 comprising a material consisting essentially of tantalum and hafnium. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供能够传送高精度转印图案的半色调相移掩模。 解决方案：在具有用于形成半色调移相器部分的半色调移相器薄膜上的透明基板上的半色调相移掩模板1中，半色调移相器膜5包括上层4，上层4包括基本上由硅组成的材料， 氧和氮，下层3包括基本上由钽和铪组成的材料。 版权所有（C）2004，JPO

公开(公告)号：JPH11237726A

公开(公告)日：1999-08-31

申请号：JP18145298

申请日：1998-06-12

Applicant: HOYA CORP

Inventor： MITSUI HIDEAKI ,  TAKEUCHI MEGUMI ,  NOZAWA JUN

IPC: G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask excellent in dealing with the shorter wavelength of exposure light and its blank. SOLUTION: For example, the translucent film (halftone phase shifter film) 2 of the halftone type phase shift mask blank contain silicon and nickel and at least one kind selected from nitrogen, oxygen and hydrogen and further the silicon and nickel contained in the translucent film have the relation expressed by the formula. The translucent film (halftone phase shifter film) has a desired transmissivity and refractive index to the exposure wavelength of 248 nm or 193 nm or the like. Then, the film is capable of basically dealing with the shorter wavelength of the exposure light. In addition, the translucent film has the desired transmisivity to the wavelength of inspection light. Then, the mask suitable for practicable use allowing the conduction of highly reliable inspection may be manufactured.

公开(公告)号：JPH09326355A

公开(公告)日：1997-12-16

申请号：JP16391096

申请日：1996-06-04

Applicant: HOYA CORP

Inventor： MITSUI HIDEAKI ,  NAGASAWA HIROYUKI ,  SHIYOUKI TSUTOMU

IPC: C23C16/27 ,  C23C16/56 ,  G03F1/22 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To deposit a thin film secured to a support and to produce an X-ray mask while protecting them against mechanical damage and eliminating contamination due to acid or alkali. SOLUTION: A substance making a transition to a liquid phase or a solid phase at a temperature lower than the denaturation point of a thin film substance is employed as a basic material 12. A thin film 13 is then deposited thereon to form a laminate 14 which is then brought into tight contact with a support 11 composed of a substance in which phase transition does not take place at a temperature lower than the transition temperature of the basic material 12. Subsequently, it is heat treated at a temperature higher than the transition temperature of the basic material 12 but lower than the denaturation point of the thin film substance to produce a thin film 10 with support. An X-ray absorber is then bonded onto the thin film 10 with support and sputtered to produce an X-ray mask.

公开(公告)号：JPH0952793A

公开(公告)日：1997-02-25

申请号：JP22967795

申请日：1995-08-11

Applicant: HOYA CORP

Inventor： MITSUI HIDEAKI ,  NAGASAWA HIROYUKI ,  YAMAGUCHI YOICHI

IPC: C30B25/18 ,  B81C1/00 ,  H01L21/02 ,  H01L21/20 ,  H01L27/12

Abstract: PROBLEM TO BE SOLVED: To easily obtain substrate-film constitution having a joint boundary which is excellent in uniformity, purity, etc., by laminating a starting material having the components of part in forming materials on a substrate, then bringing this material into reaction with a reactive material, thereby forming the film of the formed material. SOLUTION: An example of forming a silicon carbide film 3 on a quartz substrate 2 is explained. The surface of a single crystal silicon plate 1 is first oxidized to form an oxidized layer 1a. Then, the surface of the oxidized layer 1a of this silicon plate 1 and the polished surface of the quartz substrate 2 are mated and are joined by a direct joining method to bring the oxidized layer 1a and the quartz substrate 2 into reaction, by which the secure joint boundary 1b is formed. The silicon plate 1 is then ground to a thinner film to form the thin film 1A of silicon; thereafter, gaseous acetylene and gaseous hydrogen are supplied at a high temp. to the surface of the thin film 1A of the silicon, by which the thin film 1A of the silicon is carbonized and the single crystal silicon carbide film 3 is formed. The silicon carbide film 4 having a desired film thickness is formed by a vacuum CVD method, etc., on this silicon carbide film 3.

公开(公告)号：JP2011002859A

公开(公告)日：2011-01-06

申请号：JP2010224523

申请日：2010-10-04

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： MITSUI HIDEAKI

IPC: G03F1/32 ,  G03F1/34 ,  G03F1/54 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a phase shift mask, capable of contributing to fineness and high accuracy of a circuit pattern.SOLUTION: The phase shift mask 20 is obtained by using a phase shift mask blank 10, prepared by forming an ultra-thin film (chromium nitride film) 2 on a quartz substrate 1 for forming a phase shift pattern 1P and further, forming a resist film 3 thereon, as a stock material, and through steps of: forming a resist pattern 3P in the resist film 3; etching the ultra-thin film 2, by using the resist pattern as a mask to form an ultra-thin film pattern 2P; etching the quartz substrate 1 by using the ultra-thin film pattern 2P as a mask to form a phase shift pattern 1P; forming a light-shielding film 4 on the substrate 1, after completing formation of the phase shift pattern 1P and removal of the resist pattern 3 and the ultra-thin film pattern 2P; and selectively etching the light-shielding film 4 by using a resist 5 so as to expose the phase shift pattern 1P, while leaving the light-shielding part 4A at a required portion. The film thickness of the ultra-thin film 2 is set to a minimum thickness necessary to form the phase shift pattern in the quartz substrate 1, by using the ultra-thin film pattern 2P as the mask.

Abstract translation: 要解决的问题：提供一种能够有助于电路图形的细度和高精度的相移掩模的制造方法。解决方案：通过使用相移掩模坯料10获得相移掩模20，该相移掩模坯料10通过形成 在用于形成相移图案1P的石英基板1上，并且在其上形成抗蚀剂膜3作为原料的超薄膜（氮化铬膜）2，并且通过以下步骤：在 抗蚀膜3; 通过使用抗蚀剂图案作为掩模来蚀刻超薄膜2以形成超薄膜图案2P; 通过使用超薄膜图案2P作为掩模来蚀刻石英衬底1以形成相移图案1P; 在形成相移图案1P并除去抗蚀剂图案3和超薄膜图案2P之后，在基板1上形成遮光膜4; 并且通过使用抗蚀剂5选择性地蚀刻遮光膜4，以使曝光相移图案1P，同时将遮光部分4A留在所需部分。 通过使用超薄膜图案2P作为掩模，将超薄膜2的膜厚度设定为在石英衬底1中形成相移图案所需的最小厚度。

公开(公告)号：JP2010008868A

公开(公告)日：2010-01-14

申请号：JP2008170305

申请日：2008-06-30

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： HASHIMOTO MASAHIRO ,  MITSUI HIDEAKI

IPC: G03F1/32 ,  G03F1/54

CPC classification number: G03F1/38 ,  G03F1/32 ,  G03F1/34 ,  G03F1/80

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a phase shift mask achieving compatibility between thinning of an etching mask layer required for the generation of a 32 to 22 nm half pitch (hp) and securing latitude of the optical density design of a shielding zone. SOLUTION: A phase shift part is an engraved part engraved from the surface of a light transmitting substrate to an engraved depth that induces a predetermined phase difference. The surface of the light transmitting substrate to be engraved has an etching mask film 10 made of a material that is substantially dry etched by a chlorine-based gas but substantially not dry etched by a fluorine-based gas and that functions as an etching mask upon forming an engraved part at least until the etching process reaches the engraved depth. On the opposite surface of the light transmitting substrate, a light shielding film 20 is provided, for forming a light shielding part (shielding zone) to block exposure light transmitting through the light transmitting substrate in an area out of the transfer pattern area due to etching. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造相位移掩模的方法，其实现了产生32至22nm半间距（hp）所需的蚀刻掩模层的薄化和光密度设计的纬度之间的兼容性 的屏蔽区。 解决方案：相移部分是从透光基板的表面雕刻到引起预定相位差的雕刻深度的雕刻部分。 要雕刻的透光基板的表面具有蚀刻掩模膜10，该蚀刻掩模膜10由基本上被氯基气体干蚀刻但基本上不被氟基气体干蚀刻的材料制成，并且用作蚀刻掩模 至少形成雕刻部分，直到蚀刻工艺达到雕刻深度。 在透光基板的相对表面上，设置有遮光膜20，用于形成遮光部（遮蔽区域），以阻挡由于蚀刻而在透射基板的透射区域内的透射光的曝光 。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2004004488A

公开(公告)日：2004-01-08

申请号：JP2002325200

申请日：2002-11-08

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SHIODA YUUKI ,  NOZAWA JUN ,  MITSUI HIDEAKI

IPC: G03F1/29 ,  G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask blank or the like which has adjusted prescribed transmittance and phase shift quantity to light for exposure of a wavelength selected from a wavelength region of 140 to 200 nm, permits the inspection of the foreign substance defects of the halftone type phase shift mask blank and further permits the defect assurance as a mask blank.
SOLUTION: In the halftone type phase shift mask blank having phase shifter films, the phase shifter films have the prescribed transmittance and phase shift quantity to the light for exposure of the wavelength selected from the wavelength region of 140 to 200 nm, wherein the transmittance and phase shift quantity is adjusted by using the multilayered films where at least ≥2 layers including an upper layer formed on the outermost surface side and a lower layer are laminated thereunder. The phase shifter films further have reflectivity to permit inspection with the inspection light used for the inspection of the foreign substance defects of the halftone type phase shift mask blank.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003322946A

公开(公告)日：2003-11-14

申请号：JP2002127445

申请日：2002-04-26

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SHIODA YUUKI ,  NOZAWA JUN ,  MITSUI HIDEAKI ,  OKUBO AKIRA

IPC: G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a halftone phase shifting mask blank capable of high- precision CD control. SOLUTION: In the halftone phase shifting mask blank 1 having a phase shifter film 5, the phase shifter film 5 has a phase adjusting layer 4 which chiefly controls the phase of exposure light and a transmittance adjusting layer 3 formed between a transparent substrate 2 and the phase adjusting layer 4 and having a function to chiefly control the transmittance of exposure light, and the thickness of the transmittance adjusting layer 3 is ≤90 Å. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供能够进行高精度CD控制的半色调相移掩模坯料。 解决方案：在具有移相膜5的半色调相移掩模板1中，移相膜5具有主要控制曝光光的相位的相位调整层4和形成在透明基板之间的透射率调节层3 2和相位调整层4，并且具有主要控制曝光光的透射率的功能，并且透射率调节层3的厚度为≤90。 版权所有（C）2004，JPO