23.
    发明专利
    未知

    公开(公告)号:DE2058869A1

    公开(公告)日:1971-06-24

    申请号:DE2058869

    申请日:1970-11-30

    Applicant: IBM

    Abstract: This specification discloses a scheme for regenerating the data in stored charge storage cells of monolithic memories. The scheme involves periodic reading out of the data in the stored charge storage cells and temporarily storing the data in the capacitance of an address line for the storage cell. Thereafter the data on the address line is written back into the cell.

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