公开(公告)号：DE19860080B4

公开(公告)日：2007-03-29

申请号：DE19860080

申请日：1998-12-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NAGEL NICOLAS ,  PRIMIG ROBERT ,  KASKO IGOR ,  BRUCHHAUS RAINER

IPC: H01L23/522 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532

公开(公告)号：DE19950540B4

公开(公告)日：2005-07-21

申请号：DE19950540

申请日：1999-10-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BEITEL GERHARD ,  SAENGER ANNETTE ,  KASKO IGOR

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L21/8239

Abstract: A capacitor electrode is produced with an underlying barrier structure. A barrier incorporation layer is used and a CMP (chemical mechanical polishing) process is employed in order to produce the barrier structure. The capacitor electrode with an underlying barrier structure is produced by depositing a barrier layer on a semiconductor substrate; forming a barrier structure from the barrier layer with a lithographic mask and an etching step; depositing a barrier incorporation layer covering the barrier structure and surrounding regions; and removing the barrier incorporation layer with chemical mechanical polishing until the barrier structure is uncovered, to thereby form the capacitor electrode above the barrier structure.

公开(公告)号：DE10112276A1

公开(公告)日：2002-10-02

申请号：DE10112276

申请日：2001-03-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENKE MATTHIAS ,  KASKO IGOR ,  WEINRICH VOLKER

IPC: H01L21/02 ,  H01L21/285 ,  H01L27/115 ,  H01L27/11502 ,  H01L21/8239 ,  H01L27/105

Abstract: The integrated ferroelectric semiconductor memory is fabricated according to the stack cell principle. A ferroelectric capacitor module is formed on an intermediate oxide above a selection transistor located in or on a semiconductor wafer. The capacitor module is brought into conductive contact by its bottom capacitor electrode with an electrode of the selection transistor by means of an electrically conductive plug leading through the intermediate oxide. A layer system of a conductive oxygen diffusion barrier and a conductive adhesion layer is deposited directly below the bottom capacitor electrode, and the adhesion layer and the overlying oxygen diffusion barrier are deposited directly into the contact hole and form the plug at least in the region lying directly below the bottom capacitor electrode.