公开(公告)号：JP2002033298A

公开(公告)日：2002-01-31

申请号：JP2001146908

申请日：2001-05-16

Applicant: INFINEON TECHNOLOGIES AG ,  SIEMENS AG

Inventor： BEITEL GERHARD ,  SEEBACHER BAERBEL ,  SAENGER ANNETTE

IPC: B24B57/02 ,  B24B37/00 ,  C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/321

Abstract: PROBLEM TO BE SOLVED: To obtain polishing liquid for a chemical-mechanical polishing treatment process, which can be used for planarizing or patterning of a metal or a metal oxide. SOLUTION: In this polishing liquid, at least one kind of additive selected from among (a) water or water/alcohol mixture, (b) polycrystalline diamond powder, and (c) oxidizing agent, a complex forming agent, a surfactant and a group of organic base is contained. The removal rate can be improved, when planarizing or patterning the metal or the metal oxide by using the polishing liquid.

公开(公告)号：WO2004068539A3

公开(公告)日：2005-02-10

申请号：PCT/SG2004000018

申请日：2004-01-19

Applicant: INFINEON TECHNOLOGIES AG ,  TOSHIBA KK ,  ZHUANG HAOREN ,  EGGER ULRICH ,  TOMIOKA KAZUHIRO ,  LIAN JINGYU ,  NAGEL NICOLAS ,  HILLIGER ANDREAS ,  BEITEL GERHARD

Inventor： ZHUANG HAOREN ,  EGGER ULRICH ,  TOMIOKA KAZUHIRO ,  LIAN JINGYU ,  NAGEL NICOLAS ,  HILLIGER ANDREAS ,  BEITEL GERHARD

IPC: H01L20060101 ,  H01L21/02 ,  H01L21/311 ,  H01L21/8246 ,  H05K5/00

CPC classification number: H01L28/55 ,  H01L21/31116 ,  H01L28/57

Abstract: The present invention provides a sidewall oxygen diffusion barrier and method for fabricating the sidewall oxygen diffusion barrier to reduce the diffusion of oxygen to contact plugs during CW hole reactive ion etch processing of a ferroelectric capacitor of an FeRAM device. In one embodiment the sidewall barrier is formed from a substrate fence, while in another embodiment the sidewall barrier is formed by etching back an oxygen barrier.

Abstract translation: 本发明提供一种侧壁氧扩散阻挡层和用于制造侧壁氧扩散阻挡层的方法，以在FeRAM器件的铁电电容器的CW孔反应离子蚀刻处理期间减少氧气对接触插塞的扩散。 在一个实施例中，侧壁屏障由衬底栅栏形成，而在另一个实施例中，通过蚀刻回氧屏障来形成侧壁屏障。

公开(公告)号：WO2004027841A3

公开(公告)日：2004-08-12

申请号：PCT/EP0310117

申请日：2003-09-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BEITEL GERHARD ,  HILLIGER ANDREAS ,  MOON BUM-KI ,  NAGEL NICOLAS

IPC: H01G4/228 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8246 ,  H01L27/115

CPC classification number: H01L27/11502 ,  H01L21/76895 ,  H01L27/11507 ,  H01L28/60

Abstract: A capacitor with improved reliability is disclosed. The capacitor includes a bottom electrode, a top electrode, and an intermediate layer therebetween. A contact, which is electrically coupled to the top electrode, is provided. At least a portion of the contact is offset from the capacitor. By offsetting the contact from the top electrode, the etch damage to the top electrode is reduced, thereby reducing or eliminating the need for the anneal to repair the etch damage.

Abstract translation: 公开了具有可靠性提高的电容器。 电容器包括底部电极，顶部电极和它们之间的中间层。 提供了电耦合到顶部电极的触点。 触点的至少一部分偏离电容器。 通过抵消与顶部电极的接触，对顶部电极的蚀刻损伤减小，从而减少或消除了退火以修复蚀刻损伤的需要。

公开(公告)号：WO0129885A2

公开(公告)日：2001-04-26

申请号：PCT/DE0003662

申请日：2000-10-16

Applicant: INFINEON TECHNOLOGIES AG ,  BEITEL GERHARD ,  SAENGER ANNETTE ,  KASKO IGOR

Inventor： BEITEL GERHARD ,  SAENGER ANNETTE ,  KASKO IGOR

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108

CPC classification number: H01L28/60 ,  H01L21/28568 ,  H01L21/31053 ,  H01L21/3212 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/75

Abstract: The invention relates to a method for the production of a capacitor electrode (11) with a barrier structure (14.1) arranged beneath it. Said method comprises producing the barrier structure (14.1) by means of introducing a barrier support layer (16) and applying a CMP (chemical mechanical polishing) process.

Abstract translation: 在用于制造与下方设置屏障结构（14.1）的电容器电极（11）的方法被用于生产屏障结构（14.1）的阻挡存储层（16）的插入和使用的CMP（化学机械抛光）工艺。

公开(公告)号：WO0036636A3

公开(公告)日：2000-08-10

申请号：PCT/DE9903926

申请日：1999-12-08

Applicant: INFINEON TECHNOLOGIES AG ,  WENDT HERMANN ,  BEITEL GERHARD ,  REISINGER HANS

Inventor： WENDT HERMANN ,  BEITEL GERHARD ,  REISINGER HANS

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/8242

CPC classification number: H01L28/75 ,  H01L28/55 ,  H01L28/60

Abstract: The aim of the invention is to create a microelectronic structure which prevents oxidation of oxygen-sensitive structures (25). To this end, the microelectronic structure is provided with a conductive layer (10) consisting of a platinum iridium alloy. The iridium should hamper the oxygen diffusion through the conductive layer (10) by binding the oxygen when the microelectronic structure is treated in a oxygen-containing atmosphere. Oxidation-sensitive structures (25) are thus protected underneath the conductive layer (10).

Abstract translation: 它是要创建的微电子结构，其防止对氧敏感的结构（25）的氧化。 为了这个目的，在微电子结构的导电层（10）由铂铱合金制成。 铱应通过结合氧气阻碍通过导电层（10）中的氧扩散，从而保护用一种处理微电子结构的导电层（10）下方的氧化敏感的结构（25）在含氧气氛。

公开(公告)号：AU2003282769A8

公开(公告)日：2004-06-30

申请号：AU2003282769

申请日：2003-11-24

Applicant: INFINEON TECHNOLOGIES AG ,  TOSHIBA KK

Inventor： MOON BUM-KI ,  BEITEL GERHARD ,  ARISUMI OSAMU ,  ITOKAWA HIROSHI

IPC: H01L21/02

Abstract: In a capacitor and a method for its manufacture, a first electrode layer and a second electrode layer are formed such that a ferroelectric layer is situated between the first and second electrode layer. A first bilayer or multi-layer seed structure is formed between the ferroelectric layer and either the first electrode layer or the second electrode layer.

公开(公告)号：DE10118422A1

公开(公告)日：2002-10-24

申请号：DE10118422

申请日：2001-04-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEINRICH VOLKER ,  BEITEL GERHARD ,  HAUSER ANDREAS ,  BOSK PETER

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/4763

Abstract: Production of a structured metal-containing layer on a semiconductor wafer comprises preparing a wafer with a substrate (1); arranging the metal-containing layer (4) on the substrate; arranging a mask layer (5) on the metal-containing layer; structuring the mask layer and the metal-containing layer; depositing a protective layer (6) on the mask layer and on the substrate; and chemical-mechanical polishing the protective layer and the mask layer, in which the protective layer and the mask layer are removed by an electrode and the electrode is exposed. Preferred Features: A barrier layer is applied to the substrate before applying the electrode. The barrier layer contains titanium or titanium nitride, tantalum or tantalum nitride or tantalum silicon nitride, or iridium or iridium oxide. The electrode contains platinum. The protective layer is made from silicon nitride. The mask layer contains silicon oxide.

公开(公告)号：DE19849542C2

公开(公告)日：2002-07-11

申请号：DE19849542

申请日：1998-10-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BEITEL GERHARD ,  FRITSCH ELKE ,  WENDT HERMANN

IPC: H01L21/02 ,  H01L21/8246 ,  H01L27/11502 ,  H01L27/11507 ,  H01L21/3205 ,  H01L21/8242

Abstract: Capacitor has a silicon-containing oxide layer, a barrier layer and an electrode layer on a substrate. Production of a capacitor comprises: (1) preparing a substrate (5) having a silicon-containing oxide layer (12), a barrier layer (35) and an electrode layer (30); (2) selectively etching the electrode layer and the barrier layer in one common or in subsequent steps to form an electrode (57) of the capacitor, where the oxide layer (12) below the barrier layer (35) is attacked by at least one etching step to a required degree; and (3) CVD depositing a metal in a oxidizing atmosphere and at a deposition temperature to form a polycrystalline metal oxide layer. An amorphous passivating edge (50) is produced on CVD deposition of the barrier layer.

公开(公告)号：DE10118422B4

公开(公告)日：2007-07-12

申请号：DE10118422

申请日：2001-04-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEINRICH VOLKER ,  BEITEL GERHARD ,  HAUSER ANDREAS ,  BOSK PETER

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L21/44 ,  H01L21/4763

公开(公告)号：DE19950540A1

公开(公告)日：2001-05-03

申请号：DE19950540

申请日：1999-10-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BEITEL GERHARD ,  SAENGER ANNETTE ,  KASKO IGOR

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L21/8239

Abstract: The invention relates to a method for the production of a capacitor electrode (11) with a barrier structure (14.1) arranged beneath it. Said method comprises producing the barrier structure (14.1) by means of introducing a barrier support layer (16) and applying a CMP (chemical mechanical polishing) process.