公开(公告)号：DE102008002652B4

公开(公告)日：2010-09-16

申请号：DE102008002652

申请日：2008-06-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： POWER JOHN ,  SHUM DANNY PAK-CHUM ,  ZHUANG HAOREN

IPC: H01L21/8247 ,  H01L21/311

公开(公告)号：DE112004001788T5

公开(公告)日：2006-07-20

申请号：DE112004001788

申请日：2004-08-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LIAN JINGYU ,  EGGER ULRICH ,  ZHUANG HAOREN

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8246 ,  H01L27/115

Abstract: A method for fabricating a device and a device, such as a ferroelectric capacitor, having a substrate, a contact plug through the substrate, a first barrier layer on the substrate, a first electrode on the first barrier layer, a dielectric layer on the first electrode, and a second electrode on the dielectric layer, comprises etching the second electrode and the dielectric layer of the device using a first hardmask, to shape the second electrode and the dielectric layer. The first hardmask is then removed and one or more encapsulating layers are applied to the second electrode and the dielectric layer. A further hardmask is applied to the one or more encapsulating layers. The first electrode is then etched according to the second hardmask down to the first barrier layer and the second hardmask is then removed from the one or more encapsulating layers.

公开(公告)号：DE112004001438T5

公开(公告)日：2006-07-20

申请号：DE112004001438

申请日：2004-07-06

Applicant: INFINEON TECHNOLOGIES AG ,  TOSHIBA KK

Inventor： ZHUANG HAOREN ,  EGGER ULRICH ,  LIAN JINGYU ,  GERNHARDT STEFAN ,  KANAYA HIROYUKI

IPC: H01L21/20 ,  H01L21/02 ,  H01L21/8246 ,  H01L27/115

公开(公告)号：DE112004001585T5

公开(公告)日：2006-06-29

申请号：DE112004001585

申请日：2004-08-31

Applicant: INFINEON TECHNOLOGIES AG ,  TOSHIBA KK

Inventor： EGGER ULRICH ,  ZHUANG HAOREN ,  STOJAKOVIC GEORGE ,  TOMIOKA KAZUHIRO

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/8246 ,  H01L27/115

公开(公告)号：DE102004009562A1

公开(公告)日：2004-09-16

申请号：DE102004009562

申请日：2004-02-25

Applicant: INFINEON TECHNOLOGIES AG ,  TOSHIBA KK

Inventor： WELLHAUSEN UWE ,  BRUCHHAUS RAINER ,  ZHUANG HAOREN ,  EGGER ULLRICH ,  HORNIK KARL ,  LIAN JINGYU ,  BEITEL GERHARD ,  TOMIOKA KAZUHIRO ,  NATORI KATSUAKI

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/8246 ,  H01L21/8239

Abstract: In semiconductor device fabrication processes which include the formation of hardmask elements 17 including Al2O2, unwanted Al2O3 is left between the hardmask elements 17. The unwanted Al2O3 includes a layer 9 of Al2O3which is not homogenous across the surface of the structure 3 it overlies, and Al2O3 deposits on the sides of the hardmask elements 17. A method is proposed in which any such unwanted Al2O3 between the hardmask elements 17 is removed by a wet etching step in which the unwanted Al2O3 is exposed to an etchant liquid which etches the Al2O3 at a faster rate than other portions of the structure. This step allows the unwanted Al2O3 to be removed substantially completely without causing significant detriment to those other portions of the structure. Subsequently, an RIE etching step can be performed using the hardmask elements 17 as a mask, without the unwanted Al2O3 obstructing the RIE etching step.

公开(公告)号：AU2003299121A1

公开(公告)日：2004-04-19

申请号：AU2003299121

申请日：2003-09-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LIAN JENNY ,  ZHUANG HAOREN ,  EGGER ULRICH ,  HORNIK KARL

IPC: H01L21/02 ,  H01L21/311