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    FERROELECTRIC CAPACITOR AND PROCESS FOR ITS MANUFACTURE
    3.
    发明申请
    FERROELECTRIC CAPACITOR AND PROCESS FOR ITS MANUFACTURE 审中-公开
    铁电电容器及其制造工艺

    公开(公告)号：WO2004051711A3

    公开(公告)日：2004-08-26

    申请号：PCT/SG0300271

    申请日：2003-11-17

    Applicant: INFINEON TECHNOLOGIES AG ,  EGGER ULRICH ,  ZHUANG HAOREN ,  HORNIK KARL

    Inventor： EGGER ULRICH ,  ZHUANG HAOREN ,  HORNIK KARL

    IPC: H01L21/02 ,  H01L21/311 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/115

    CPC classification number: H01L28/55 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/31116 ,  H01L21/3162

    Abstract: A method of forming a capacitor, comprises the steps of (a) forming a matrix of ferroelectric capacitor elements on a substrate, (b) forming a CAP layer over the ferroelectric capacitor elements, and (c) etching the CAP layer to a more uniform thickness. Also, a capacitor comprises a substrate layer, a matrix of ferroelectric capacitor elements including a first electrode layer substantially fixed relative to the substrate, a second electrode layer, and a ferroelectric layer sandwiched between the first and second electrode layers; a shoulder layer extending from the substrate to the matrix; and a CAP layer etched to have substantially constant thickness covering sides of the matrix extending beyond the substrate.

    Abstract translation: 一种形成电容器的方法，包括以下步骤：（a）在衬底上形成铁电电容器元件的矩阵，（b）在铁电电容器元件上形成CAP层，以及（c）将CAP层蚀刻到更均匀 厚度。 此外，电容器包括衬底层，铁电电容器元件矩阵，包括相对于衬底基本上固定的第一电极层，第二电极层和夹在第一和第二电极层之间的铁电层; 从衬底延伸到基体的肩层; 以及被蚀刻以具有基本上恒定厚度的CAP层，覆盖延伸超过衬底的基体的侧面。

    METHOD OF PATTERNING CAPACITORS AND CAPACITORS MADE THEREBY
    4.
    发明申请
    METHOD OF PATTERNING CAPACITORS AND CAPACITORS MADE THEREBY 审中-公开
    绘制电容器和电容器的方法

    公开(公告)号：WO2004030069A3

    公开(公告)日：2004-06-10

    申请号：PCT/SG0300220

    申请日：2003-09-17

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： LIAN JENNY ,  ZHUANG HAOREN ,  EGGER ULRICH ,  HORNIK KARL

    IPC: H01L21/02 ,  H01L21/311

    CPC classification number: H01L28/55 ,  H01L21/31122

    Abstract: A method of forming a ferroelectric capacitor, in particular for use in a FeRAM or high-k DRAM application, and a capacitor made by the method. The method comprises forming a first layer which is patterned, for example by a reactive ion etching method. A ferroelectric material is then formed over the patterned first layer. The morphology of the ferroelectric material will be dependent upon the patterning of the first layer. The ferroelectric layer is then patterned, for example using a wet etching or a reactive ion etching method. The etching will depend upon the morphology of the ferroelectric layer. After etching the ferroelectric layer, a conductive layer is provided over the ferroelectric layer to form a first electrode of the capacitor. If the first layer is a conductive layer, this forms the second electrode. If the first layer is a non-conductive layer,. the conductive layer is patterned to form both the first and second electrodes.

    Abstract translation: 形成铁电电容器的方法，特别是用于FeRAM或高k DRAM应用的方法，以及由该方法制成的电容器。 该方法包括形成图案化的第一层，例如通过反应离子蚀刻方法。 然后在图案化的第一层上形成铁电材料。 铁电材料的形态将取决于第一层的图案化。 然后将铁电层图案化，例如使用湿式蚀刻或反应离子蚀刻方法。 蚀刻将取决于铁电层的形态。 在对铁电体层进行蚀刻之后，在铁电层上设置导电层，形成电容器的第一电极。 如果第一层是导电层，则形成第二电极。 如果第一层是非导电层， 图案化导电层以形成第一和第二电极。

    5.
    发明专利
    未知

    公开(公告)号：DE112004001321T5

    公开(公告)日：2006-06-01

    申请号：DE112004001321

    申请日：2004-07-02

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HILLINGER ANDREAS ,  LIAN JINGYU ,  NAGEL NICOLAS ,  BRUCHHAUS RAINER ,  GERNHARDT STEPHAN ,  WELLHAUSEN UWE ,  MOON BUM-KI ,  HORNIK KARL

    IPC: H01L21/02 ,  H01G4/06 ,  H01G4/12 ,  H01G4/33 ,  H01L21/8246 ,  H01L27/115

    Abstract: A multi-layer barrier for a ferroelectric capacitor includes an outdiffusion barrier layer permeable to both hydrogen and oxygen. The outdiffusion barrier layer covers the ferroelectric of the capacitor. Oxygen passes through the outdiffusion barrier layer into the ferroelectric during an oxygen anneal in order to repair damage to the ferroelectric caused during etching. The outdiffusion barrier layer reduces the decomposition of the ferroelectric by blocking molecules leaving the ferroelectric during the oxygen anneal. The multi-layer barrier also includes a hydrogen barrier layer deposited on the outdiffusion barrier layer after repair of the ferroelectric by the oxygen anneal. The hydrogen barrier layer allows the multi-layer barrier to block the passage of hydrogen into the ferroelectric during back-end processes.

    FERROELECTRIC CAPACITOR AND PROCESS FOR ITS MANUFACTURE
    6.
    发明专利
    FERROELECTRIC CAPACITOR AND PROCESS FOR ITS MANUFACTURE 未知

    公开(公告)号：AU2003283942A1

    公开(公告)日：2004-06-23

    申请号：AU2003283942

    申请日：2003-11-17

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： EGGER ULRICH ,  ZHUANG HAOREN ,  HORNIK KARL

    IPC: H01L21/02 ,  H01L21/311 ,  H01L21/316 ,  H01L21/00

    Abstract: Forming a capacitor, by (a) forming a matrix of ferroelectric capacitor elements on a substrate, (b) forming a CAP layer over the ferroelectric capacitor elements, and (c) etching the CAP layer to a more uniform thickness. A capacitor that has a substrate layer, a matrix of ferroelectric capacitor elements including a first electrode layer substantially fixed relative to the substrate, a second electrode layer, and a ferroelectric layer sandwiched between the first and second electrode layers is disclosed. The capacitor has a shoulder layer extending from the substrate to the matrix, and a CAP layer etched to have substantially constant thickness covering sides of the matrix extending beyond the substrate.

    ENCAPSULATION OF FERROELECTRIC CAPACITORS
    7.
    发明专利
    ENCAPSULATION OF FERROELECTRIC CAPACITORS 未知

    公开(公告)号：AU2003290500A1

    公开(公告)日：2004-07-29

    申请号：AU2003290500

    申请日：2003-12-22

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HORNIK KARL ,  EGGER ULRICH ,  BRUCHHAUS RAINER

    IPC: H01L21/02 ,  H01L21/3213

    Abstract: A ferroelectric capacitor encapsulation method for preventing hydrogen damage to electrodes and ferroelectric material of the capacitor. In general terms, the method for encapsulating a capacitor includes etching a bottom electrode of a capacitor to expose an underlying wafer surface. An undercut is etched between the capacitor and the wafer surface. The undercut is refilled with a barrier layer to reduce the diffusion of hydrogen from the surface of the wafer into the capacitor.

    Ferroelectric capacitor and process for its manufacture
    8.
    发明专利
    Ferroelectric capacitor and process for its manufacture 未知

    公开(公告)号：AU2003283942A8

    公开(公告)日：2004-06-23

    申请号：AU2003283942

    申请日：2003-11-17

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： EGGER ULRICH ,  ZHUANG HAOREN ,  HORNIK KARL

    IPC: H01L21/02 ,  H01L21/311 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/115

    Abstract: Forming a capacitor, by (a) forming a matrix of ferroelectric capacitor elements on a substrate, (b) forming a CAP layer over the ferroelectric capacitor elements, and (c) etching the CAP layer to a more uniform thickness. A capacitor that has a substrate layer, a matrix of ferroelectric capacitor elements including a first electrode layer substantially fixed relative to the substrate, a second electrode layer, and a ferroelectric layer sandwiched between the first and second electrode layers is disclosed. The capacitor has a shoulder layer extending from the substrate to the matrix, and a CAP layer etched to have substantially constant thickness covering sides of the matrix extending beyond the substrate.

    9.
    发明专利
    未知

    公开(公告)号：DE10393802T5

    公开(公告)日：2005-10-06

    申请号：DE10393802

    申请日：2003-11-17

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： EGGER ULRICH ,  ZHUANG HAOREN ,  HORNIK KARL

    IPC: H01L21/02 ,  H01L21/311 ,  H01L21/316 ,  H01L21/00

    Abstract: Forming a capacitor, by (a) forming a matrix of ferroelectric capacitor elements on a substrate, (b) forming a CAP layer over the ferroelectric capacitor elements, and (c) etching the CAP layer to a more uniform thickness. A capacitor that has a substrate layer, a matrix of ferroelectric capacitor elements including a first electrode layer substantially fixed relative to the substrate, a second electrode layer, and a ferroelectric layer sandwiched between the first and second electrode layers is disclosed. The capacitor has a shoulder layer extending from the substrate to the matrix, and a CAP layer etched to have substantially constant thickness covering sides of the matrix extending beyond the substrate.

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