公开(公告)号：US20210165027A1

公开(公告)日：2021-06-03

申请号：US16065582

申请日：2015-12-25

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Guangwei XU ,  Zhiheng HAN ,  Wei WANG ,  Congyan LU ,  Lingfei WANG ,  Ling LI ,  Ming LIU

IPC: G01R27/20 ,  G01R27/08

Abstract: A method for obtaining a contact resistance of a planar device includes: obtaining a contact resistance of a planar device by using a potential measurement method, in the measurement of the surface potential distribution, the planar device is in a state of current flowing, a certain voltage drop is formed at a junction area of the device; extracting the voltage drop measured through the Kelvin microscope by using a linear fitting method; and dividing the measured voltage drop by the current flowing through the device, thereby accurately calculating the magnitude of the contact resistance at the junction area of the planar device. With the present invention, the contact resistance of the planar device can be precisely measured, which is suitable for the contact resistance measurement experiments of devices such as thin film transistors and diodes. The invention has the advantages of reasonable theory, accurate result, simple and easy operation, and is favorable for optimizing the device performance and establishing a complete electrical model of the device.

公开(公告)号：US20210013404A1

公开(公告)日：2021-01-14

申请号：US16767091

申请日：2018-03-28

Applicant: Institute of Microelectronics, Chinese Academy of Sciences

Inventor： Qing LUO ,  Hangbing LV ,  Ming LIU

IPC: H01L45/00

Abstract: The present disclosure provides a self-rectifying resistive memory, including: a lower electrode; a resistive material layer formed on the lower electrode and used as a storage medium; a barrier layer formed on the resistive material layer and using a semiconductor material or an insulating material; and an upper electrode formed on the barrier layer to achieve Schottky contact with the material of the barrier layer; wherein, the Schottky contact between the upper electrode and the material of the barrier layer is used to realize self-rectification of the self-rectifying resistive memory. Thus, no additional gate transistor or diode is required as the gate unit. In addition, because the device has self-rectifying characteristics, it is capable of suppressing read crosstalk in the cross-array.

公开(公告)号：US20190115529A1

公开(公告)日：2019-04-18

申请号：US16085400

申请日：2016-03-18

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Ming LIU ,  Qing LUO ,  Xiaoxin XU ,  Hangbing LV ,  Shibing LONG ,  Qi LIU

IPC: H01L45/00 ,  H01L27/24 ,  H01L29/51 ,  G11C11/56

Abstract: A selector for a bipolar resistive random access memory and a method for fabricating the selector are provided. The method includes: providing a substrate; forming a lower electrode on the substrate, where the lower electrode is made of a metal, and the metal is made up of metal atoms which diffuse under an annealing condition of below 400° C.; forming a first metal oxide layer on the lower electrode; performing an annealing process on the first metal oxide layer to make the metal atoms in the lower electrode diffuse into the first metal oxide layer to form a first metal oxide layer doped with metal atoms; forming a second metal oxide layer on the first metal oxide layer doped with metal atoms; forming an upper electrode layer on the second metal oxide layer; and patterning the upper electrode layer to form an upper electrode.

公开(公告)号：US20160123944A1

公开(公告)日：2016-05-05

申请号：US14896342

申请日：2013-06-05

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Dongmei LI ,  Shuang ZHAN ,  Shengfa LIANG ,  Xin CHEN ,  Changqing XIE ,  Ming LIU

IPC: G01N33/00

CPC classification number: G01N33/0036 ,  G01N27/00 ,  G01N27/12 ,  G01N33/0037

Abstract: A method for manufacturing an NO2 gas sensor for detection at room temperature comprises: manufacturing a metal electrode on a surface of a flexible substrate; manufacturing an SWCNTs/SnO2 sensitive film; and bonding the SWCNTs/SnO2 sensitive film with a portion of the surface of the flexible substrate with the metal electrode, so as to form the NO2 gas sensor for detection at room temperature. The present disclosure solves the problems of the poor adhesion between the sensitive material and the flexible substrate, and a non-uniform distribution, and achieves the purposes of secure bonding between the sensitive material and the flexible substrate, and uniform distribution.

Abstract translation: 一种用于在室温下检测的NO 2气体传感器的制造方法包括：在柔性基板的表面上制造金属电极; 制造SWCNTs / SnO2敏感膜; 并将SWCNTs / SnO2敏感膜与柔性基板表面的一部分与金属电极接合，以便形成用于在室温下检测的NO 2气体传感器。 本公开解决了敏感材料与柔性基板之间的粘合性差，分布不均匀的问题，并且实现了敏感材料与柔性基板之间的牢固结合的目的，并且均匀分布。

公开(公告)号：US20250031379A1

公开(公告)日：2025-01-23

申请号：US18397387

申请日：2023-12-27

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Qing LUO ,  Yuan WANG ,  Ming LIU

IPC: H10B51/30 ,  H01L21/28 ,  H01L29/51 ,  H01L29/78 ,  H10B53/30

Abstract: The present disclosure provides a semiconductor device based on a dielectric material containing a metal interstitial impurity, including: a substrate, a dielectric material layer, and a functional layer. A material for preparing the dielectric material layer is a compound containing the metal interstitial impurity. The dielectric material layer and/or the functional layer is configured to subject to at least one of electricity, heat, light or magnetism, such that the dielectric material layer reaches a crystallization temperature to transit from a first state to a second state.

公开(公告)号：US20240087628A1

公开(公告)日：2024-03-14

申请号：US18259747

申请日：2020-12-30

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Guozhong XING ,  Huai LIN ,  Feng ZHANG ,  Di WANG ,  Long LIU ,  Changqing XIE ,  Ling LI ,  Ming LIU

IPC: G11C11/16 ,  H03K19/21 ,  H10B61/00 ,  H10N50/20 ,  H10N50/80 ,  H10N50/85

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H03K19/21 ,  H10B61/00 ,  H10N50/20 ,  H10N50/80 ,  H10N50/85

Abstract: A multi-resistance-state spintronic device, including: a top electrode and a bottom electrode respectively connected to a read-write circuit; and a magnetic tunnel junction between two electrodes. The magnetic tunnel junction includes from top to bottom: a ferromagnetic reference layer, a barrier tunneling layer, a ferromagnetic free layer, and a spin-orbit coupling layer. Nucleation centers are provided at two ends of the ferromagnetic free layer to generate a magnetic domain wall; the spin-orbit coupling layer is connected to the bottom electrode, and when a write pulse is applied, an electron spin current is generated and drives the magnetic domain wall through a spin-orbit torque to move; a plurality of local magnetic domain wall pinning centers are provided at an interface between the spin-orbit coupling layer and the ferromagnetic free layer to enhance a strength of a DM interaction constant between interfaces.

公开(公告)号：US20220122997A1

公开(公告)日：2022-04-21

申请号：US17310282

申请日：2019-01-28

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Hangbing LV ,  Qing LUO ,  Xiaoxin XU ,  Tiancheng GONG ,  Ming LIU

IPC: H01L27/1159 ,  H01L27/11597 ,  H01L25/065

Abstract: Disclosed is a memory, including a plurality of memory units, wherein each memory unit includes: a bulk substrate; a source electrode, a drain electrode and a channel region extending between a source region and a drain region that are located on the bulk substrate; a deep-level defect dielectric layer on the channel region; and a gate electrode on the deep-level defect dielectric layer. The memory of the present disclosure allows the memory unit to operate in the charge trapping mode and the polarization inversion mode. Therefore, the memory has functions of both DRAM and NAND, and combines the advantages of the two.

公开(公告)号：US20210175420A1

公开(公告)日：2021-06-10

申请号：US16616785

申请日：2017-05-26

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Hangbing LV ,  Ming LIU ,  Shibing LONG ,  Qi LIU

IPC: H01L45/00 ,  H01L27/24

Abstract: A RRAM and a method for fabricating the same, wherein the RRAM comprises: a bottom electrode; an oxide layer containing a bottom electrode metal, disposed on the bottom electrode; a resistance-switching layer, disposed on the oxide layer containing a bottom electrode metal, wherein the resistance-switching layer material is a nitrogen-containing tantalum oxide; an inserting layer, disposed on the resistance-switching layer, wherein the inserting layer material comprises a metal or a semiconductor; a top electrode, disposed on the inserting layer. By providing the to resistance-switching layer with a nitrogen-containing tantalum oxide, compared with Ta2O5, the RRAM of the present disclosure has a low activation voltage and a high on-off ratio, and can enhance the control capability over the device resistance by the number of oxygen vacancies.

公开(公告)号：US20190235858A1

公开(公告)日：2019-08-01

申请号：US16337978

申请日：2017-04-21

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Yuanlu XIE ,  Kun ZHANG ,  Haitao SUN ,  Jing LIU ,  Jinshun BI ,  Ming LIU

IPC: G06F8/654 ,  G06F13/42 ,  G06F1/3296

CPC classification number: G06F8/654 ,  G06F1/3296 ,  G06F8/71 ,  G06F13/4282

Abstract: An apparatus and a method for configuring or updating a programmable logic device are provided. The apparatus includes a control module and a storage module connected to the control module. The control module includes: a JTAG interface for connecting the control module to a JTAG host, and a configuration interface compatible with a to-be-configured programmable logic device. The control module is configured to: after receiving a first control instruction including configuration information via the JTAG interface, store the configuration information into the storage module; and after receiving a configuration instruction, read the configuration information to configure the to-be-configured programmable logic device. A configuration clock used in a process that the control module configures the to-be-configured programmable logic device is generated from the to-be-configured programmable logic device, the control module or an external clock source.

公开(公告)号：US20150325437A1

公开(公告)日：2015-11-12

申请号：US14801547

申请日：2015-07-16

Applicant: Institute of Microelectronics, Chinese Academy of Sciences

Inventor： Dongmei LI ,  Xin CHEN ,  Shengfa LIANG ,  Shuang ZHAN ,  Peiwen ZHANG ,  Changqing XIE ,  Ming LIU

IPC: H01L21/02 ,  H01L21/388

CPC classification number: H01L21/02554 ,  C23C8/10 ,  C23C12/00 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02581 ,  H01L21/02614 ,  H01L21/02617 ,  H01L21/388

Abstract: The present disclosure provides a method for preparing compound semiconductor sensitive film based on a displacement reaction-thermal oxidation method, the method comprising: growing a layer of Zn on a high temperature-resistant substrate; submerging the substrate on which the layer of Zn has been grown into ionic solution of soluble salt of Cu, such that Cu ions in the solution are displaced so as to separate Cu nano-particles out on a surface of the layer of Zn; and performing a thermal oxidation process on the layer of Zn to whose surface Cu nano-particles are adhered, such that the Cu nano-particles are oxidized into CuO nano-particles, so as to obtain a ZnO gas sensitive film that is doped with CuO nano-particles. The above preparing method has the following advantages: good filming quality, simplified preparation process, low cost and easy to control.

Abstract translation: 本发明提供一种基于置换反应 - 热氧化法制备化合物半导体敏感膜的方法，所述方法包括：在耐高温基材上生长Zn层; 将已经生长了Zn层的衬底浸没在Cu的可溶性盐的离子溶液中，使得溶液中的Cu离子移位，以便在Zn层的表面上分离Cu纳米颗粒; 并对其表面附着有Cu纳米粒子的Zn层进行热氧化处理，使Cu纳米粒子被氧化为CuO纳米粒子，得到掺有CuO的ZnO气体敏感膜 纳米颗粒。 上述制备方法具有以下优点：成膜质量好，制备工艺简单，成本低，易于控制。