公开(公告)号：EP3779598A2

公开(公告)日：2021-02-17

申请号：EP20177915.4

申请日：2012-04-04

Applicant: Kla-Tencor Corporation

Inventor： KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

IPC: G03F7/20 ,  G01N37/00

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

公开(公告)号：EP2694983B1

公开(公告)日：2020-06-03

申请号：EP12768608.7

申请日：2012-04-04

Applicant: KLA-Tencor Corporation

Inventor： KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

IPC: G03F7/20 ,  G03F1/48

公开(公告)号：WO2019236084A1

公开(公告)日：2019-12-12

申请号：PCT/US2018/036362

申请日：2018-06-07

Applicant: KLA-TENCOR CORPORATION

Inventor： GUTMAN, Nadav ,  ZABERCHIK, Moran ,  AMIT, Eran

IPC: G03F7/20

Abstract: Methods and systems are disclosed for determining overlay in a semiconductor manufacturing process. Radiation reflected from a diffraction pattern in a metrology target may include + 1 and - 1 diffraction patterns at different wavelengths and focal positions. The different wavelengths of radiation may be in a waveband where the sensitivity of contrast to wavelength is at a maximum. The reflected radiation may be analysed to obtain measured values of overlay as well as amplitude and/or phase corresponding to points distributed over the target, for different wavelengths and focal positions. The measured values of overlay may undergo a series of operations to determine the overlay. The determination may use an assumption that the amplitude and phase are unequal in the +1 and -1 diffraction orders.

公开(公告)号：WO2018089076A1

公开(公告)日：2018-05-17

申请号：PCT/US2017/047742

申请日：2017-08-21

Applicant: KLA-TENCOR CORPORATION

Inventor： AMIT, Eran ,  VOLKOVICH, Roie ,  YERUSHALMI, Liran

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/027

Abstract: Lithography systems and methods are provided with enhanced performance based on broader utilization of the integrated metrology tool in the printing tool to handle the metrology measurements in the system in a more sophisticated and optimized way. Additional operation channels are disclosed, enabling the integrated metrology tool to monitor and/or allocate metrology measurements thereby and by a standalone metrology tool with respect to specified temporal limitations of the printing tool; to adjust and optimize the metrology measurement recipes; to provide better process control to optimize process parameters of the printing tool; as well as to group process parameters of the printing tool according to a metrology measurements landscape.

Abstract translation: 基于更广泛地利用印刷工具中的集成度量工具来以更复杂和优化的方式处理系统中的计量测量，提供具有增强性能的光刻系统和方法。 公开了额外的操作通道，使得集成度量工具能够由此以及通过独立度量工具相对于打印工具的指定时间限制来监视和/或分配度量衡量; 调整和优化计量测量配方; 提供更好的过程控制以优化印刷工具的过程参数; 以及根据计量测量领域对印刷工具的工艺参数进行分类。

公开(公告)号：WO2016172122A1

公开(公告)日：2016-10-27

申请号：PCT/US2016/028314

申请日：2016-04-19

Applicant: KLA-TENCOR CORPORATION

Inventor： LEE, Myungjun ,  SMITH, Mark D. ,  ADEL, Michael E. ,  AMIT, Eran ,  KANDEL, Daniel

IPC: H01L21/66

CPC classification number: G01J9/00 ,  G03F7/705 ,  G03F7/70683 ,  H01L22/30

Abstract: Metrology methods, modules and targets are provided, for measuring tilted device designs. The methods analyze and optimize target design with respect to the relation of the Zernike sensitivity of pattern placement errors (PPEs) between target candidates and device designs. Monte Carlo methods may be applied to enhance the robustness of the selected target candidates to variation in lens aberration and/or in device designs. Moreover, considerations are provided for modifying target parameters judiciously with respect to the Zernike sensitivities to improve metrology measurement quality and reduce inaccuracies.

Abstract translation: 提供了测量方法，模块和目标，用于测量倾斜的设备设计。 该方法针对目标候选者和设备设计之间的图案布局错误（PPEs）的泽尔尼克敏感度的关系，分析和优化目标设计。 可以应用蒙特卡洛方法来增强所选择的目标候选者对透镜像差和/或装置设计中的变化的鲁棒性。 此外，还提供了考虑到明确地修改Zernike敏感度的目标参数，以提高计量测量质量并减少不准确度。

公开(公告)号：WO2015006604A1

公开(公告)日：2015-01-15

申请号：PCT/US2014/046220

申请日：2014-07-10

Applicant: KLA-TENCOR CORPORATION

Inventor： VOLKOVICH, Roie ,  AMIT, Eran ,  YOHANAN, Raviv

IPC: H01L21/66

CPC classification number: G05B19/41875 ,  G03F7/0002 ,  G03F7/70625 ,  G05B2219/32368 ,  G05B2219/37224

Abstract: Methods and respective modules are provided, configured to identify registration errors of DSA lines with respect to guiding lines in a produced structure, by comparing a measured signature of the structure with simulated signatures corresponding to simulated structures having varying simulated characteristics, and characterizing the produced structure according to the comparison. The characterization may be carried out using electromagnetic characterization of a geometric model or in a model-free manner by analyzing model-based results. Thus, for the first time, positioning and dimensional errors of DSA lines may be measured.

Abstract translation: 提供方法和各个模块，其被配置为通过将结构的测量签名与对应于具有变化的模拟特征的模拟结构的模拟签名进行比较来识别DSA线相对于所产生的结构中的引导线的登记误差，以及表征所产生的结构 根据比较。 可以使用几何模型的电磁表征或者通过分析基于模型的结果以无模型的方式来进行表征。 因此，可以首次测量DSA线的定位和尺寸误差。

公开(公告)号：WO2014039674A1

公开(公告)日：2014-03-13

申请号：PCT/US2013/058254

申请日：2013-09-05

Applicant: KLA-TENCOR CORPORATION

Inventor： AMIT, Eran ,  KLEIN, Dana ,  COHEN, Guy ,  WIDMANN, Amir ,  SHUALL, Nimrod ,  MANASSEN, Amnon ,  AMIR, Nuriel

IPC: G06F19/00

CPC classification number: G01B21/042 ,  G03F7/70625 ,  G03F7/70633

Abstract: Aspects of the present disclosure describe systems and methods for calibrating a metrology tool by using proportionality factors. The proportionality factors may be obtained by measuring a substrate under different measurement conditions. Then calculating the measured metrology value and one or more quality merits. From this information, proportionality factors may be determined. Thereafter the proportionality factors may be used to quantify the inaccuracy in a metrology measurement. The proportionality factors may also be used to determine an optimize measurement recipe. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract translation: 本公开的方面描述了通过使用比例因子来校准度量工具的系统和方法。 可以通过在不同测量条件下测量衬底来获得比例因子。 然后计算测量的度量值和一个或多个质量优点。 根据该信息，可以确定比例因子。 此后，可以使用比例因子来量化度量测量中的不准确度。 比例因子也可用于确定优化测量配方。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

公开(公告)号：WO2012138758A1

公开(公告)日：2012-10-11

申请号：PCT/US2012/032169

申请日：2012-04-04

Applicant: KLA-TENCOR CORPORATION ,  KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

Inventor： KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

IPC: G01N37/00

CPC classification number: G03F7/70633 ,  G01N2223/6116

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

Abstract translation: 本发明可以包括从分布在许多晶片的晶片的一个或多个场上的多个测量目标获取多个覆盖度量测量信号，为多个覆盖度量测量信号中的每一个确定多个重叠估计 使用多个覆盖算法，生成多个覆盖估计分布，以及利用所生成的多个覆盖估计分布生成第一多个质量度量，其中每个质量度量对应于所生成的多个覆盖估计分布的一个覆盖估计分布 每个质量度量是对应的生成的重叠估计分布的宽度的函数，每个质量度量还是来自相关度量目标的覆盖度量测量信号中存在的不对称的函数。

公开(公告)号：EP3762776A1

公开(公告)日：2021-01-13

申请号：EP18910355.9

申请日：2018-09-03

Applicant: Kla-Tencor Corporation

Inventor： LAMHOT, Yuval ,  AMIT, Eran ,  PELED, Einat ,  SELLA, Noga ,  CHENG, Wei-Te Aaron

IPC: G03F7/20

公开(公告)号：EP3724723A1

公开(公告)日：2020-10-21

申请号：EP18888716.0

申请日：2018-12-10

Applicant: Kla-Tencor Corporation

Inventor： GUTMAN, Nadav ,  AMIT, Eran ,  EYRING, Stefan ,  PATHANGI SRIRAMAN, Hari ,  LASKE, Frank ,  POHLMANN, Ulrich ,  HEIDRICH, Thomas

IPC: G03F7/20 ,  G01N21/84 ,  H01L21/66 ,  H01L21/67