公开(公告)号：DE69832226T2

公开(公告)日：2006-07-27

申请号：DE69832226

申请日：1998-03-11

Applicant: LUCENT TECHNOLOGIES INC

Inventor： MERCHANT SAILESH M ,  NGUYENPHU BINH

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/532

Abstract: A semiconductor device and a method of manufacture therefor. The semiconductor device includes: (1) a substrate having a recess therein, (2) an aluminum-alloy layer located over at least a portion of the substrate and filling at least a portion of the recess and (3) a protective metal layer at least partially diffused in the aluminum-alloy layer, the metal protective layer having a high affinity for oxygen and acting as a sacrificial target for oxygen during a reflow of the aluminum-alloy layer.

公开(公告)号：DE69832226D1

公开(公告)日：2005-12-15

申请号：DE69832226

申请日：1998-03-11

Applicant: LUCENT TECHNOLOGIES INC

Inventor： MERCHANT SAILESH M ,  NGUYENPHU BINH

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/3205

Abstract: A semiconductor device and a method of manufacture therefor. The semiconductor device includes: (1) a substrate having a recess therein, (2) an aluminum-alloy layer located over at least a portion of the substrate and filling at least a portion of the recess and (3) a protective metal layer at least partially diffused in the aluminum-alloy layer, the metal protective layer having a high affinity for oxygen and acting as a sacrificial target for oxygen during a reflow of the aluminum-alloy layer.

公开(公告)号：AU2411300A

公开(公告)日：2000-08-01

申请号：AU2411300

申请日：2000-01-11

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ALERS GLENN B ,  MERCHANT SAILESH M ,  ROY PRADIP K

IPC: H01L21/02 ,  H01L21/316 ,  H01L29/49 ,  H01L29/92

Abstract: The present invention provides a semiconductor device that has a metal barrier layer for a dielectric material, which can be used in an integrated circuit, if so desired. The semiconductor device provides a capacitance to the integrated circuit and in a preferred embodiment comprises a first layer located on a surface of the integrated circuit. A metal barrier layer is located on the first layer and is susceptible to oxidation by oxygen. A high K capacitor dielectric layer (i.e., a higher K than silicon dioxide) that contains oxygen, such as tantalum pentoxide, is located over the metal barrier layer. The semiconductor device further includes a first layer located over the high K capacitor dielectric layer.