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    21.
    发明专利
    未知

    公开(公告)号：FR2832853B1

    公开(公告)日：2004-02-27

    申请号：FR0115458

    申请日：2001-11-29

    Applicant: MEMSCAP

    Inventor： GIRARDIE LIONEL ,  DAVID JEAN BAPTISTE

    IPC: H01F17/00 ,  H01F41/04 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L27/04 ,  H01L21/02

    Abstract: Electronic component incorporating inductive microcomponent is manufactured by etching copper-diffusion barrier layer (15) between turns (30, 31) of inductive microcomponent. Fabrication of electronic component incorporating inductive microcomponent, comprises: (i) depositing layer of material having low relative permittivity on substrate (1); (ii) depositing layer (12) forming hard mask; (iii) forming aperture in the hard mask vertically above the metal pads; (iv) etching the layer on material having low relative permittivity down to metal pad to form interconnection hole or via; (v) depositing layer forming copper barrier diffusion; (vi) depositing copper primer layer; (vii) depositing protective mask and removing it from the bottom of the via; (viii) depositing copper electrolytically in the via; (ix) removing the rest of the protective mask; (x) depositing top resist layer with thickness similar to the thickness of turns of the inductive microcomponent; (xi) etching the resist layer to form channels defining geometry of turns of the inductive microcomponent; (xii) depositing layer electrolytically in the etch channels; (xiii) removing the rest of the top resist layer; (xiv) etching the copper primer layer between copper turns; and (xv) etching copper-diffusion barrier layer between turns of inductive microcomponent.

    24.
    发明专利
    未知

    公开(公告)号：FR2835970A1

    公开(公告)日：2003-08-15

    申请号：FR0201618

    申请日：2002-02-11

    Applicant: MEMSCAP

    Inventor： GIRARDIE LIONEL

    IPC: C23C16/40 ,  C23C16/44 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  H01L29/92 ,  H01G4/002 ,  H01G4/33

    Abstract: Disclosed is an electronic micro component (1) made on the basis of a semi-conducting substrate (2), comprising a capacitive structure which is applied on top of a main plane (7) of the substrate. The capacitive structure is provided with two electrodes (20,33), each of which comprises a flat portion (11, 38) running parallel to the main plane (7) of the substrate and a plurality of walls (16-18,34-37) that run parallel to each other and perpendicular to the flat portion (11, 38), to which said walls are connected. The parallel walls of each electrode are arranged one (16-18) between the other (34-37).

    Production of an electronics component including a microelectromechanical structure includes etching a silicon dioxide layer with hydrogen fluoride between layers of silicon carbide
    28.
    发明专利
    Production of an electronics component including a microelectromechanical structure includes etching a silicon dioxide layer with hydrogen fluoride between layers of silicon carbide 未知

    公开(公告)号：FR2853645A1

    公开(公告)日：2004-10-15

    申请号：FR0304651

    申请日：2003-04-14

    Applicant: MEMSCAP

    Inventor： GIRARDIE LIONEL

    IPC: B81B3/00 ,  H01H59/00 ,  B81C1/00

    Abstract: Production of an electronics component including a microelectromechanical structure comprising a metal part that is attached to a substrate through an anchoring zone and has a movable zone comprises forming a stack of alternating silicon oxide, silicon carbide, silicon oxide and silicon carbide layers on the substrate, forming the anchoring zone through the stack, forming the movable zone on top of the stack, and etching the upper silicon dioxide layer with hydrogen fluoride. Production of an electronics component including a microelectromechanical structure comprising a metal part that is attached to a substrate through an anchoring zone (20) and has a movable zone (24) mechanically separated from the substrate comprises forming a stack of alternating silicon oxide, silicon carbide, silicon oxide and silicon carbide layers on the substrate, forming the anchoring zone through the stack, forming the movable zone on top of the stack, and etching the upper silicon dioxide layer with anhydrous hydrogen fluoride gas.

    29.
    发明专利
    未知

    公开(公告)号：FR2833411B1

    公开(公告)日：2004-02-27

    申请号：FR0115960

    申请日：2001-12-11

    Applicant: MEMSCAP

    Inventor： GIRARDIE LIONEL ,  DAVID JEAN BAPTISTE

    IPC: H01F17/00 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L27/04 ,  H01L27/08 ,  H01L49/00

    Abstract: An electronic component is fabricated by: (a) incorporating an inductive microcomponent comprising stack(s) of layer of material (10a) having a low relative permittivity; (b) depositing an upper resin layer; (c) etching the resin layer to form channels defining the turns; (d) depositing a copper diffusion barrier layer; and (e) planarizing until the upper resin layer is revealed. Fabrication of an electronic component, incorporating an inductive microcomponent placed on top of a substrate and connected by a metal contact(s), comprises: (a) depositing on the substrate a stack(s) of layer of material having a low relative permittivity and a layer forming a hard mask (12a); (b) making an aperture in the hard mask layer placed in the upper position, vertically in line with the metal contacts; (c) etching the layers of material having a low relative permittivity and the subjacent hard mask layers down to the metal contact to form a via; (d) depositing a layer forming a copper diffusion barrier; (e) depositing a copper initiating layer; (f) depositing, electrolytically, a copper layer filling the via and covering the initiating layer; (g) planarizing the upper face until the upper hard mask layer is exposed; (h) depositing an upper resin layer formed from a material having a low relative permittivity; (i) etching the resin layer to form channels defining the turns of the inductive microcomponent and of possible other conductive features; (j) depositing a copper diffusion barrier layer; (k) depositing a copper initiating layer; (l) depositing electrolytically on the channels; and (m) planarizing until the upper resin layer is revealed.

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