METHOD FOR FORMING PATTERN OF CARBON NANO-TUBE

    公开(公告)号:JP2002234000A

    公开(公告)日:2002-08-20

    申请号:JP2001337441

    申请日:2001-11-02

    Applicant: NEC CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a method capable of easily performing minute pattern forming of carbon nano-tube film and of forming a carbon nano-tube pattern of a good flatness, a good shape of a pattern end part, and improved reliability in isolation between elements. SOLUTION: When a pattern is formed with wet etching carbon nano-tube 6 by a transferring method, solution used for dissolving binder used in the transferring method is used as solution used for wet etching and carbon nano- tube entangled during wet etching is scoured off with cloth-like matter 12. When the pattern is formed by dry etching for the carbon nano-tube, metal film or film of material not damaged during dry etching and not damaging the carbon nano-tube during removal is used as a mask.

    ELECTRIC FIELD DISCHARGE TYPE CATHODE AND CATHODE RAY TUBE USING THEREOF

    公开(公告)号:JPH1021820A

    公开(公告)日:1998-01-23

    申请号:JP16737496

    申请日:1996-06-27

    Applicant: NEC CORP

    Abstract: PROBLEM TO BE SOLVED: To aim at uniformization of emission by making an insulation range formed on a substrate in a doughnut shape and forming it a preset distance away from the outer periphery and the inner periphery of a cathode forming range. SOLUTION: An insulation portion 4 is provided on a silicone substrate 1. A cathode 8 is separated by a preset distance from the touching part of a resistance layer 5 to the silicone substrate 1 and formed within the range of the doughnut shape between touching power supply parts 2 and 3. The rate of voltage drop of a resistance in an anode range is relatively made smaller so that the emission distribution in the anode range is uniformized. Since the power supply portion to the anode 8 from the substrate 1 via the resistance layer 5 is composed of two place consisting of a part 2 supplied with electric power from the outside of a cathode outer peripheral part and a part 3 supplied with electric power from a anode inside, the inside anode 8 also makes its emission action, so that the total electric current quantity is increased up to about two times. A display monitor for which a anode ray tube of this structure is used is capable of having high brightness and high accuracy and effect of low electric power consumption.

    COLD CATHODE ELECTRON GUN STRUCTURE FOR CATHODE-RAY TUBE

    公开(公告)号:JPH07182990A

    公开(公告)日:1995-07-21

    申请号:JP25505294

    申请日:1994-10-20

    Applicant: NEC CORP

    Abstract: PURPOSE:To prevent short circuit between a grid and a bonding wire and at the same time improve the bonding workability when a gate electrode and a drawing out electrode are connected together by wire bonding. CONSTITUTION:A hole part 7 is formed at the part facing to the bonding wire 8 of a grid 5 positioned near the periphery of a gate electrode 4 and the gate electrode 4 and a drawing out electrode 9 are communicated with each other by the bonding wire 8 at the position of the hole part 7. Consequently, since wire bonding work for the gate electrode 4 and the drawing out electrode 9 can be carried out through the grid hole part 7, the work can be made extremely easily. Also, though the bonding wire 8 and the grid 5 are easily brought into contact each other conventionally and that causes short circuit, the trouble of short circuit due to the contact is solved by using this electron gun structure body.

    ELECTRON GUN STRUCTURE FOR CATHODE-RAY TUBE USING FIELD EMISSION TYPE CATHODE

    公开(公告)号:JPH0721903A

    公开(公告)日:1995-01-24

    申请号:JP16337293

    申请日:1993-07-01

    Applicant: NEC CORP

    Abstract: PURPOSE:To prevent destruction of color balance caused by the difference in the amount of currents from cathodes and to restrict reduction in brightness due to high speed scanning, in a cathode-ray tube for which a field emission type cathode is used. CONSTITUTION:An electron gun for cathode-ray tube, for which a field emission type cathode is used, has a structure, in which control voltage can be applied individually by three field emission type cathode groups 1R, 1G, 1B corresponding to R, G, B picture elements formed on an insulated layer 2, and control voltage can be individually applied to gate electrodes 3R, 3G, 3B corresponding to the cathode groups 1R, 1G, 1B, since the gate electrodes are insulated from each other. When any difference occurs in the control voltage due to the manufacturing error among the three cathodes corresponding to the R, G, B picture elements, this difference can be adjusted, and voltage applied to each can be halved by adding a synchronizing brightness signal of reverse phase to the cathode and the gate electrode.

    COLD CATHODE ELEMENT AND ITS MANUFACTURE

    公开(公告)号:JPH06223706A

    公开(公告)日:1994-08-12

    申请号:JP963193

    申请日:1993-01-25

    Applicant: NEC CORP

    Abstract: PURPOSE:To realize a cold cathode in which the structure is simple, the assembly is simple, the accuracy is high, and a small size electron gun can be composed. CONSTITUTION:An opening common to a minute cold cathode group 12 is provided on the first insulating layer 8 to compose the minute cold cathode group 12, and a gate electrode 9, and the second insulator 11 thicker than the first insulating layer 8, and a metallic layer 2 are formed. As a result, an electron beam 6 is formed from the electrons discharged from the numerous minute cold cathodes 12. In order to manufacture the cathode 5, a cold cathode chip 3 including the gate electrode 9, and a composition composed of the thick insulator 11 and the metallic layer 2 are produced separately, and then the positions of both members are fitted with high accuracy and integrated so as to make into a part.

    COLOR PICTURE TUBE
    26.
    发明专利

    公开(公告)号:JPH0567440A

    公开(公告)日:1993-03-19

    申请号:JP22760491

    申请日:1991-09-09

    Applicant: NEC CORP

    Abstract: PURPOSE:To eliminate the separation of an inside conductive coating, stably supply high voltage and prevent the discharge of an electron gun when the contact point of a contact metal fitting for supplying high voltage resonates. CONSTITUTION:A flexible metal plate 11 which is attached to the bottom of an anode terminal 6 is arranged between a contact metal fitting 8 for supplying high voltage and an inside conductive coating 7 so that the contact metal fitting 8 may be previously fixed to a shadow mask structure 5 to locate the contact point of the contact metal fitting 8 on the flexible metal plate 11.

    CATHODE BODY STRUCTURE FOR CATHODE-RAY TUBE

    公开(公告)号:JPH04259739A

    公开(公告)日:1992-09-16

    申请号:JP1964291

    申请日:1991-02-13

    Applicant: NEC CORP

    Abstract: PURPOSE:To reduce the heater input electric power by providing a metal heat shielding plate on the opened part of a metal sleeve in a cathode body structure in which an one-end opened cylindrical metal sleeve provided with a heating heater is welded and fixed into a metal support cylinder. CONSTITUTION:An one-end opened two-stage cylindrical metal sleeve 2 provided with a heating heater 1 and covering an electron emitting emitter 4 is welded and fixed into a metal support cylinder 3. A metal heat shielding plate 5 consisting of the same material as that of the support cylinder 3 is welded and fixed to the sleeve 2 so as to cover the one-end opened part of the sleeve 2. Thus, the heat loss by heat radiation from the sleeve opened part can be suppressed, and the heater input power to provide a necessary temperature for the electron emitting emitter can be reduced.

    FIELD EMISSION TYPE COLD CATHODE
    30.
    发明专利

    公开(公告)号:JP2000149763A

    公开(公告)日:2000-05-30

    申请号:JP31429898

    申请日:1998-11-05

    Applicant: NEC CORP

    Abstract: PROBLEM TO BE SOLVED: To prevent occurrence of discharge between a wiring part or a bonding pad part of a gate electrode and a substrate. SOLUTION: Trenches la with embedded-insulation layers 5 embedded therein are formed in a silicon substrate 1, and a gate electrode 2 having an emitter area part 2a, a gate wiring part 2b, and a bonding pad part 2c, is formed over the silicon substrate 1 with an insulation layer 4 interposed between them. The trenches 1a formed in the silicon substrate 1 are formed not only just under the emitter area part 2a of the gate electrode 2 but also just under the gate wiring part 2b and just under the bonding pad part 2c.

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