Abstract:
A composite substrate for a semiconductor includes a handle substrate 11 and a donor substrate bonded to a surface of the handle substrate 11 directly or through a bonding layer. The handle substrate 11 is composed of an insulating polycrystalline material, a surface 15 of the handle substrate 11 has a microscopic central line average surface roughness Ra of 5 nm or smaller, and recesses 6 are formed on the surface of the handle substrate.
Abstract:
An optical device, wherein when the multi-layer film (56) side surface of a filter member (20) is defined as a first surface (70) and the quartz substrate (54) side surface thereof is defined as a second surface (72), and the inner wall surface of a slit (18) opposed to the first surface (70) of the filter member (20) is defined as a first inner wall surface (74) and the inner wall surface thereof opposed to the second surface (72) of the filter member (20) is defined as a second inner wall surface (76), one or more of the first inner wall surface (74) and the second inner wall surface (76) of the slit (18) and the second surface (72) of the filter member (20) are positioned non-parallel with the first surface (70) of the filter member (20).