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公开(公告)号：SE313089B
公开(公告)日：1969-08-04
申请号：SE1282463
申请日：1963-11-20
Applicant: RCA CORP
Inventor： CARLSON D
Abstract: 1,045,758. Transistor gain control circuits. RADIO CORPORATION OF AMERICA. Nov. 4, 1963 [Nov. 21, 1962], No. 43507/63. Heading H3T. The tuned output circuit of a gain controlled transistor comprises in series a voltage controlled variable impedance which is controlled such that its impedance varies in the opposite sense to variations in the output impedance of the transistor due to the gain control voltage. As shown, the variable impedance is a biased diode 18 which becomes less conductive as increases in gain control voltage increase the current in the transistor. The diode bias may be such that the impedance variations maintain the bandwidth of the amplifier constant or allow it to widen as the gain is reduced.
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公开(公告)号：BE645953A
公开(公告)日：1964-07-16
申请号：BE645953
申请日：1964-03-31
Applicant: RCA CORP
Inventor： CARLSON D , THERIAULT G
IPC: D06B23/10 , H01L27/088 , H01L29/00 , H03B5/24 , H03D7/12 , H03F1/26 , H03F3/191 , H03F3/193 , H03G1/00 , H03G3/30
Abstract: 1,060,242. Field-effect transistor amplifier circuits. RADIO CORPORATION OF AMERICA. March 20, 1964 [April 1, 1963], No. 11953/64. Heading H3T. [Also in Division H1] Two insulated-gate field-effect transistors (see Division H1) 90, 92 are connected in a cascade amplifier circuit as shown, with their semi-conductor substrates 126, 132 earthed. A circuit using a single such transistor also is given, Fig. 5 (not shown).
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Patent Agency Ranking
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公开(公告)号：SE319806B
公开(公告)日：1970-01-26
申请号：SE1012764
申请日：1964-08-21
Applicant: RCA CORP
Inventor： CARLSON D
Abstract: 1,076,924. Field effect transistor circuits; F.M. receivers; automatic frequency control. RADIO CORPORATION OF AMERICA. Aug. 5, 1964 [Aug. 23, 1963], No. 31880/64. Headings H3A, H3R and H3T. An insulated gate, field effect transistor has a variable voltage applied to a substrate electrode to vary the source input and drain output capacitances, and therefore the tuning of input and output circuits having inductors shunting the capacitances. Alternatively, an inductor may connect the drain and source electrodes of amplifiers having two such transistors in cascade, and resonate with the drain output and source input capacitances at the operating frequency variable tuning bias being then applied to both gate electrodes. In Fig. 7, the drain output circuit and gate circuit 150 are coupled so that oscillations are generated and the circuit is a converter, output circuit 142, 152 being tuned to the I.F. and inductor 148 resonating with the drain output capacitance 160 at the incoming frequency. Substrate voltage -V, reverse biasing the source and drain semi-conductor junction capacitance, may vary conjointly the tuning of the input circuit and local oscillator frequency so that the oscillator tracks the incoming frequency, although the input and output capacitances are unequally varied. Alternatively, a frequency discriminator may detect the I.F. and produce an AFC voltage added to -V to vary both the local oscillator frequency and the input circuit tuning. In Fig. 8, input is applied to the gate electrode of a neutralized amplifier, the gatedrain capacitance and the drain capacitance 180 in series forming one leg of a balanced bridge, with variable capacitor 188 and capacitor 190 forming the other leg. The neutralizing is unaffected by varying the tuning voltage -V 2 since the varies also the source-drain current and voltage across resistor 176 in series with the drain supply voltage V 1 , resulting in the gate-drain inherent capacitance becoming varied proportionately with the output capacitance 180. The circuits may form part of an FM receiver.
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公开(公告)号：SE318314B
公开(公告)日：1969-12-08
申请号：SE393064
申请日：1964-03-31
Applicant: RCA CORP
Inventor： CARLSON D , THERIAULT G
IPC: D06B23/10 , H01L27/088 , H01L29/00 , H03B5/24 , H03D7/12 , H03F1/26 , H03F3/191 , H03F3/193 , H03G1/00 , H03G3/30 , H03F3/16
Abstract: 1,060,242. Field-effect transistor amplifier circuits. RADIO CORPORATION OF AMERICA. March 20, 1964 [April 1, 1963], No. 11953/64. Heading H3T. [Also in Division H1] Two insulated-gate field-effect transistors (see Division H1) 90, 92 are connected in a cascade amplifier circuit as shown, with their semi-conductor substrates 126, 132 earthed. A circuit using a single such transistor also is given, Fig. 5 (not shown).
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公开(公告)号：NL6403409A
公开(公告)日：1964-10-02
申请号：NL6403409
申请日：1964-03-31
Applicant: RCA CORP
Inventor： CARLSON D , THERIAULT G
IPC: D06B23/10 , H01L27/088 , H01L29/00 , H03B5/24 , H03D7/12 , H03F1/26 , H03F3/191 , H03F3/193 , H03G1/00 , H03G3/30
Abstract: 1,060,242. Field-effect transistor amplifier circuits. RADIO CORPORATION OF AMERICA. March 20, 1964 [April 1, 1963], No. 11953/64. Heading H3T. [Also in Division H1] Two insulated-gate field-effect transistors (see Division H1) 90, 92 are connected in a cascade amplifier circuit as shown, with their semi-conductor substrates 126, 132 earthed. A circuit using a single such transistor also is given, Fig. 5 (not shown).
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