公开(公告)号：JP2001308017A

公开(公告)日：2001-11-02

申请号：JP2000123131

申请日：2000-04-24

Applicant: SONY CORP

Inventor： TANIGUCHI OSAMU ,  KIJIMA SATORU

IPC: C30B29/38 ,  H01L21/205 ,  H01L21/324 ,  H01L33/32 ,  H01L33/40 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing p-type nitride-based compound semiconductor with which a semiconductor element having a superior element characteristic can be manufactured, by improving the activating rate of a p-type impurity, and a method for manufacturing a semiconductor element using the method. SOLUTION: At the formation of a p-type guide layer 27 composed of p-type GaN, a p-type clad layer 28 composed of a p-type AlGaN mixed crystal, and a p-side contact layer 29 composed of p-type GaN, the GaN or AlGaN mixed crystal containing the p-type impurity is grown at a prescribed growing temperature, and then heated to a temperature higher than the growing temperature. After heating, in addition, the GaN or mixed crystal is cooled by using a cooling means. Consequently, the Hall concentration and mobility of the GaN or mixed crystal become higher, and the resistivity of the GaN or mixed crystal becomes lower. Therefore, proper ohmic contact can be obtained between the p-side contact layer 29 and a p-side electrode 30. In addition, since the series resistance of adjacent p-type semiconductor layers can be reduced, the operating voltage of an obtained semiconductor laser is lowered.

公开(公告)号：JPH11147798A

公开(公告)日：1999-06-02

申请号：JP31411697

申请日：1997-11-14

Applicant: SONY CORP

Inventor： OKUYAMA HIROYUKI ,  KIJIMA SATORU ,  SANAKA YUMI

IPC: C30B23/08 ,  C30B29/48 ,  H01L21/365 ,  H01L33/16 ,  H01L33/28 ,  H01S5/00 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide both a method for growing a crystal by which a crystal layer with slight defects can be grown and a method for producing a semiconductor luminous element. SOLUTION: The first electroconductive type clad layer 3 composed of an n-type ZnMgSSe mixed crystal, the first guide layer 4 composed of a ZnSSe mixed crystal, an active layer 5 composed of a ZnCdSe mixed crystal, the second guide layer 6 composed of the ZnSSe mixed crystal and the second electroconductive type clad layer 7 composed of a p-type ZnMgSSe mixed crystal are successively grown on a substrate 1. At this time, the growth face is grown in a state in which both the face of a group II element and the face of a group VI element are present. For example, the growth face is grown in a state in which both c(2×2) and (2×1) are recognized by an observation of reflection high energy electron diffraction(RHEED). Specifically, e.g. the intensity ratio of respective particle beams of zinc and selenium is regulated to 5 selenium relatively to 5-7 zinc expressed in terms of the quantity of the particle beams reaching the growth face. Thereby, a crystal layer free of defects can be grown.

公开(公告)号：JPH11135883A

公开(公告)日：1999-05-21

申请号：JP29594097

申请日：1997-10-28

Applicant: SONY CORP

Inventor： KIJIMA SATORU ,  OKUYAMA HIROYUKI

IPC: H01L21/363 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To lower the operating voltage by increasing the carrier concentration of a II-VI semiconductor layer between a p-side electrode and a p-type clad layer. SOLUTION: An n-type clad layer 3, a first guide layer 4, an active layer 5, a second guide layer 6, a p-type clad layer 7, an underlying layer 8, a contact layer 9, a super lattice layer 10 and a cap layer 11 are laminated sequentially on an n-type substrate 1. The cap layer 11 is constituted of p-type ZnTe with a thickness of less than 10 nm. The contact layer 9 is composed of p-type ZnSe and the concentration of nitrogen being added to the contact layer 9 is set at 1-2×10 cm . The underlying layer 8 is composed of mixed crystal of p-type ZnSSe and the concentration of nitrogen being added to the underlying layer 8 is set at 1-3×10 cm , which is higher than that for the contact layer 9. When each II-VI compound semiconductor layer is formed by MBE, the cell temperature is precedingly raised temporarily. The growth temperature is lowered before the underlying layer 8 and the like is grown.

公开(公告)号：JPH1140888A

公开(公告)日：1999-02-12

申请号：JP18965197

申请日：1997-07-15

Applicant: SONY CORP

Inventor： OKUYAMA HIROYUKI ,  KIJIMA SATORU

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S5/026 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To prevent device layers from deteriorating by a method, wherein the device layers are set so as to make the electronic or optical device layers decrease continuously in growth temperature, starting from the lowermost layer. SOLUTION: For instance, an n-type GaAs layer 2 and a p-type GaAs layer 3, which require the growth temperature of about 550 deg.C or about 700 deg.C and are used for the formation of photodiodes 6 and 7, and an n -type AlGaAs/GaAs layer used for the formation of a mirror/knife edge device 24, are grown on an n-type GaAs substrate 1 first. Thereafter, a II-VI compound semiconductor layer which requires a growth temperature of 280 deg.C or below and is used for the formation of a semiconductor layer 9 is grown. With this setup, when the II-VI compound semiconductor layer which is used for the formation of a semiconductor laser 9 is grown, the n-type GaAs layer 2 and the p-type GaAs layer 3 which are used for the formation of the photodiodes 6 and 7, and the n -type AlGaAs/GaAs layer used for the formation of the mirror/knife edge device 24, can be protected against deterioration.

公开(公告)号：JP2004048080A

公开(公告)日：2004-02-12

申请号：JP2003372976

申请日：2003-10-31

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASANO TAKEHARU ,  KIJIMA SATORU ,  TOJO TAKESHI ,  HINO TOMOKIMI ,  UCHIDA SHIRO

IPC: H01S5/042 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a process for manufacturing a semiconductor laser employing a nitride-based III-V compound semiconductor in which a high output can be easily ensured.
SOLUTION: After the formation of an underlying layer (a p-side clad layer 42) between an active layer 30 and a p-side electrode 52 as a part of a p-type semiconductor layer 40, a p-side contact layer 43 is formed on the p-side clad layer 42. At least one end of the p-side contact layer 43 in the direction of a resonator is then removed selectively by reactive ion etching (RIE) to form a current non-injection region (a damaged layer). Subsequently, a p-side electrode 52 is formed on the p-side contact layer 43 and on an etching region. By the current non-injection region, non-emission recombination is prevented effectively on the end faces 1a and 1b of the resonator and in the vicinity thereof, and COD is prevented.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003017810A

公开(公告)日：2003-01-17

申请号：JP2001200628

申请日：2001-07-02

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MATSUMOTO OSAMU ,  ANZAI SHINICHI ,  KIJIMA SATORU

IPC: H01L29/43 ,  C30B33/00 ,  H01L21/28 ,  H01L21/285 ,  H01L21/316 ,  H01L21/324 ,  H01S5/042 ,  H01S5/323

CPC classification number: C30B33/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/28575 ,  H01L21/3245

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing nitride semiconductor, by which the contact resistance of a nitride semiconductor with an electrode can be lowered and, at the same time, the stability of the characteristics of the semiconductor can be improved, and to provide a method of manufacturing semiconductor element using the method.
SOLUTION: After the nitride semiconductor doped with p-type impurity is manufactured, the carbon existing on the surface of the semiconductor is removed and, at the same time, an oxide film is formed on the surface by treating the surface in an active oxygen-containing atmosphere. Thereafter, the semiconductor is made to turn into a p-type semiconductor by activating the p-type impurity. Since the carbon is removed from the surface of the semiconductor and the oxide film is formed on the surface, decomposition of the surface during the course of the activating treatment can be prevented and, at the same time, the activating rate of the p-type impurity can be improved. Therefore, the contact resistance of the semiconductor with the electrode can be lowered, and the variation of the characteristics of the semiconductor can be reduced.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供一种氮化物半导体的制造方法，能够降低氮化物半导体与电极的接触电阻，能够提高半导体的特性的稳定性， 提供使用该方法制造半导体元件的方法。 解决方案：在制造掺杂有p型杂质的氮化物半导体之后，去除存在于半导体表面上的碳，同时通过在表面上形成氧化膜， 含气氛 此后，通过激活p型杂质使半导体变成p型半导体。 由于从表面除去了碳，在表面形成氧化膜，因此可以防止在活化处理过程中表面的分解，同时，p型的活化率 可以改善杂质。 因此，能够降低半导体与电极的接触电阻，能够降低半导体的特性的变化。

公开(公告)号：JP2003007999A

公开(公告)日：2003-01-10

申请号：JP2001193386

申请日：2001-06-26

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  KIJIMA SATORU

IPC: C30B29/38 ,  H01L21/205 ,  H01L29/205 ,  H01L33/32 ,  H01L33/36 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To prevent the occurrence of vertical cracks in stripe-like seed crystals during growing a III-V nitride-based compound semiconductor layer on a horizontally grown III-V nitride-based compound semiconductor layer having a different lattice constant.
SOLUTION: After a first III-V nitride-based compound semiconductor layer 3 is grown on one main surface of a substrate 1, the portions of the layer 3 from the edges of the substrate 1 to prescribed distances from the edges are left on the main surface and, at the same time, stripe-like first III-V nitride- based compound semiconductor layers 3 which become the seed crystals are formed in the inside area of the left layers 3. Then a second III-V nitride-based compound semiconductor layer is horizontally grown by using the stripe-like layers 3 as seed crystals and a III-V nitride-based compound semiconductor layer forming a laser structure is grown on the horizontally grown semiconductor layer.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：为了防止在具有不同晶格常数的水平生长的III-V族氮化物基化合物半导体层上生长III-V族氮化物基化合物半导体层期间在条状晶种中出现垂直裂纹。 解决方案：在基板1的一个主表面上生长第一III-V族氮化物基化合物半导体层3之后，将层3的从基板1的边缘到边缘的规定距离的部分留在主体 并且同时，在左层3的内部区域中形成成为晶种的条纹状的第一III-V族氮化物基化合物半导体层3.然后，将第二III-V族氮化物基化合物半导体 通过使用条状层3作为晶种水平生长层，并且在水平生长的半导体层上生长形成激光结构的III-V族氮化物系化合物半导体层。

公开(公告)号：JP2002314197A

公开(公告)日：2002-10-25

申请号：JP2001114268

申请日：2001-04-12

Applicant: SONY CORP

Inventor： TOJO TAKESHI ,  UCHIDA SHIRO ,  KIJIMA SATORU

IPC: H01S5/22 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser device of ridge waveguide type which exhibits a low driving voltage, a large θ// and satisfactory optical power- injection current characteristics up to the high-power region, namely exhibits a high kink level. SOLUTION: The group III-V nitride compound semiconductor laser device has an oscillation wavelength in the vicinity of 410 nm, and has the same structure as a conventional semiconductor laser device except that the current narrowing layer provided in a ridge 26 is different. A multilayer film composed of an SiO2 deposited film 42 having a thickness of 600 Å and an amorphous Si deposited film 44 having a thickness of 300 Å layered on the SiO2 deposited film 42 is provided on both sides of the ridge 26 and on a p-AlGaN cladding layer 22 on both sides of the ridge 26. Since the thickness of the SiO2 film and the Si film is set in such a way that the absorption coefficient in the basic horizontal and lateral mode is larger than that in the primary horizontal and lateral mode, the kink level is increased by suppressing the occurrence of a basic horizontal and lateral mode, Δn can be increased and θ// can be broadened without narrowing the ridge.

公开(公告)号：JP2002043692A

公开(公告)日：2002-02-08

申请号：JP2000353073

申请日：2000-11-20

Applicant: SONY CORP

Inventor： ASANO TAKEHARU ,  KIJIMA SATORU ,  TOJO TAKESHI ,  HINO TOMOKIMI ,  UCHIDA SHIRO

IPC: H01S5/16 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser using a nitride-based III-V compound semiconductor and its manufacturing method by which high outputting can be realized. SOLUTION: A p-side contact layer 43 is provided corresponding to other areas excluding both ends of an active layer 30 in the direction A of a resonator. In addition, an insulation layer or a high resistance layer is provided between the p-side contact layer 43 and a p-side electrode 52, corresponding to other areas excluding both ends of the active layer 30 in the direction A of the resonator. Thus, both ends of the resonator 30 in the direction A of the resonator are non-injection areas of current, which correspond to the p-side contact layer 43 in the other areas excluding both ends of the active layer 30 in the direction A of the resonator. Therefore, non-light emission re-combination can be effectively prevented on the end faces 1a and 1b of the resonator and in their adjacent areas, thereby suppressing an increase in temperature on the end faces 1a and 1b thereof and in their adjacent areas and preventing COD.

公开(公告)号：JP2000164987A

公开(公告)日：2000-06-16

申请号：JP33585398

申请日：1998-11-26

Applicant: SONY CORP

Inventor： YAMAGUCHI KYOJI ,  KOBAYASHI TOSHIMASA ,  KIJIMA SATORU ,  KOBAYASHI TAKASHI ,  ASAZUMA YASUNORI ,  ASANO TAKEHARU ,  HINO TOMOKIMI

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To achieve a more stable horizontal mode, higher output and longer life of a semiconductor light emitting element using nitride-based III-V compound semiconductor. SOLUTION: In a GaN semiconductor laser, an AlGaN buried layer 9 is provided to bury both sides of a ridge stripe portion formed on the upper layer portion of a p-type AlGaN clad layer 7. After the upper layer portion of the p-type AlGaN clad layer 7 and a p-type GaN contact layer 8 are etched by using the SiO2 layer 21 as an etching mask to pattern them, the AlGaN buried layer 9 is unselectively grown with the SiO2 layer 21 formed on the ridge stripe so that both sides of the ridge stripe are buried. Furthermore, the AlGaN buried layer 9 is etched by using the SiO2 layer 21 as an etching stop layer to remove the portion of the AlGaN buried layer 9 from the ridge stripe.