公开(公告)号：JP2014007434A

公开(公告)日：2014-01-16

申请号：JP2013217199

申请日：2013-10-18

Applicant: Sony Corp ,  ソニー株式会社 ,  Tohoku Univ ,  国立大学法人東北大学

Inventor： OKI TOMOYUKI ,  KURAMOTO MASARU ,  IKEDA MASAO ,  MIYAJIMA TAKAO ,  WATANABE HIDEKI ,  YOKOYAMA HIROYUKI

IPC: H01S5/065 ,  H01S5/22 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a mode-locked semiconductor laser element having a configuration capable of reducing the influence of piezo polarization and intrinsic polarization.SOLUTION: The mode-locked semiconductor laser element includes: a stacked structure including a sequential stack of a first compound semiconductor layer 30 composed of a GaN-based compound semiconductor, a third compound semiconductor layer 40 having a light-emitting region 41, and a second compound semiconductor layer 50; a second electrode 62; and a first electrode 61. The stacked structure is formed on a semi-polar or non-polar compound semiconductor substrate 21. The third compound semiconductor layer has a quantum well structure having a well layer and a barrier layer, and has an inclined waveguide. The flow of a current from the second electrode to the first electrode via the stacked structure generates an optical pulse in the light-emitting region.

Abstract translation: 要解决的问题：提供一种具有能够降低压电极化和固有极化影响的结构的锁模半导体激光元件。解决方案：锁模半导体激光元件包括：堆叠结构，其包括第一 由GaN基化合物半导体构成的化合物半导体层30，具有发光区域41的第三化合物半导体层40和第二化合物半导体层50; 第二电极62; 和第一电极61.层叠结构形成在半极性或非极性化合物半导体衬底21上。第三化合物半导体层具有阱层和阻挡层的量子阱结构，并且具有倾斜波导。 通过堆叠结构从第二电极到第一电极的电流的流动在发光区域中产生光脉冲。

公开(公告)号：JP2011187580A

公开(公告)日：2011-09-22

申请号：JP2010049750

申请日：2010-03-05

Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

Inventor： WATANABE HIDEKI ,  KURAMOTO MASARU ,  MIYAJIMA TAKAO ,  YOKOYAMA HIROYUKI

IPC: H01S5/065

CPC classification number: H01S5/3407 ,  H01S5/0601 ,  H01S5/30 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a driving method of a self-oscillation type semiconductor laser element for making a generated optical pulse shorter and peak output higher without causing a trouble such as heat generation and deterioration. SOLUTION: The self-oscillation type semiconductor laser element is equipped with: a laminated structure obtained by sequentially laminating a first compound semiconductor layer formed of a GaN-based compound semiconductor, a third compound semiconductor layer constituting a light emitting region and a saturable absorption region and a second compound semiconductor; a second electrode formed on the second compound semiconductor layer; and a first electrode which is electrically connected to the first compound semiconductor layer. The second electrode is isolated into: a first part for making a forward bias state by making current flow to the first electrode via the light emitting region; and a second part for applying an electric field to the saturable absorption region by an isolation groove. In the driving method of the self-oscillation type semiconductor laser element, current having a current value in which kink occurs or above in optical output-current characteristic, is made to flow to the first part of the second electrode. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种使自发振荡型半导体激光元件的驱动方法，使得产生的光脉冲更短，并且峰值输出更高，而不会引起诸如发热和劣化的故障。 解决方案：自激振荡型半导体激光元件配备有：通过顺序层叠由GaN基化合物半导体形成的第一化合物半导体层，构成发光区域的第三化合物半导体层和 饱和吸收区和第二化合物半导体; 形成在第二化合物半导体层上的第二电极; 以及与第一化合物半导体层电连接的第一电极。 第二电极被隔离成：通过使电流通过发光区域流向第一电极而产生正向偏置状态的第一部分; 以及第二部分，用于通过隔离槽将电场施加到可饱和吸收区域。 在自激振荡型半导体激光元件的驱动方法中，使具有光输出电流特性中发生或更高的扭结的电流值的电流流向第二电极的第一部分。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2006135001A

公开(公告)日：2006-05-25

申请号：JP2004320465

申请日：2004-11-04

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MIYAJIMA TAKAO ,  TOMITANI SHIGETAKA ,  ASAZUMA YASUNORI

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element capable of increasing the composition ratio of indium contained in an indium-containing layer such as a GaInN mixed crystal layer or the like while being capable of improving a crystal quality and capable of enhancing characteristics. SOLUTION: A low-temperature buffer layer 11, a first intermediate layer 21, a polarity inversion layer 20, a second intermediate layer 22, an n-side contact layer 31, an n-type clad layer 32, a first guide layer 33, an active layer 34, a second guide layer 35, a p-type clad layer 36, and a p-side contact layer 37, are laminated successively on one surface side of a substrate 10. The polarity inversion layer 20 is composed of GaN, and contains magnesium (Mg) as impurities and a polarity is inverted from a Ga polarity to an N polarity. A section from the second intermediate layer 22 to an upper section (the p-type contact layer 37) is brought to the N polarity, and the active layer 34 has the indium composition ratio, and the crystal quality higher than the active layer 34 is formed on the layer having the Ga polarity. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种半导体元件，其能够提高包含在诸如GaInN混晶层等的含铟层中的铟的组成比，同时能够提高晶体质量并且能够增强 特点。 解决方案：低温缓冲层11，第一中间层21，极性反转层20，第二中间层22，n侧接触层31，n型覆层32，第一引导件 层33，有源层34，第二引导层35，p型覆盖层36和p侧接触层37依次层叠在基板10的一个表面侧。极性反转层20构成 的GaN，并且含有镁（Mg）作为杂质，并且极性从Ga极性反转到N极性。 从第二中间层22到上部（p型接触层37）的部分变为N极性，有源层34具有铟组成比，并且比有源层34高的晶体质量为 形成在具有Ga极性的层上。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004312038A

公开(公告)日：2004-11-04

申请号：JP2004190824

申请日：2004-06-29

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MIYAJIMA TAKAO

IPC: H01L21/28 ,  H01L21/338 ,  H01L29/812 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming an ohmic electrode whose contact specific resistance is small and thermostability is high, capable of stably operating a device over a long period. SOLUTION: A contact layer 2, comprising a p-type compound semiconductor containing at least one kind of element out of a group comprising gallium, aluminum, boron and indium as the group-III elements and nitrogen, is formed on a p-type compound semiconductor 1. A transition element layer 3a, containing at least one kind of element from among the transition elements other than gold and platinum, is formed on the contact layer 2; a platinum layer 3b comprising platinum is formed on the layer 3a; and after a gold layer 3c comprising gold is further formed on the platinum layer 3b, the layers are annealed as a whole. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004146852A

公开(公告)日：2004-05-20

申请号：JP2004029739

申请日：2004-02-05

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

IPC: H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To improve crystallinity and electric conductivity, and also to homogenize the composition ratio and p-type impurity concentration in a growth surface of a crystal. SOLUTION: Alternate stacking of a plurality of first and second layers 11 and 12, respectively, with each first layer 11 and each second layer 12 stacking one over another and subsequent heat-treatment yield third layers between the first layers 11 and second layers 12, wherein the first layers 11 are AlGaN mixed crystal approximately 1 to 100nm thick and second layers 12 are Mg-doped p-type GaN approximately 1 to 100 nm thick. The third layers contain aluminum in a lower concentration than the first layers and contain p-type impurity in a lower concentration than the second layers. It is feasible to form the third layers by forming the first and second layers that have different contents of aluminum and different concentrations of the p-type impurity from each other, through separate processes, and subsequently heat-treatment, whereby it is enabled to manufacture with facility a good-quality p-type group III nitride compound semiconductor having properties of p-type AlGaN mixed crystal as a whole. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2002305160A

公开(公告)日：2002-10-18

申请号：JP2001108017

申请日：2001-04-06

Applicant: SONY CORP ,  NEC CORP

Inventor： MIYAJIMA TAKAO ,  TOMITANI SHIGETAKA ,  USUI AKIRA

IPC: C30B33/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/268 ,  H01L33/32 ,  H01L33/44 ,  H01S5/02 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To manufacture a compound semiconductor substrate by forming a compound semiconductor layer of proper quality having a small number of crystal defects on a single-crystal substrate and peeling the single-crystal substrate, without damaging the compound semiconductor layer. SOLUTION: On the single-crystal substrate (sapphire substrate) 11, 1st, 2nd, and 3rd compound semiconductor layers 12, 13, and 17 formed by carrying out crystal growth, while a space 18 is partially formed with the sapphire substrate 11. The 1st, 2nd, and 3rd compound semiconductor layers 12, 13, and 17 are peeled off of the sapphire substrate 11, through fusing of the interface between the sapphire substrate 11 and 1st compound semiconductor layer 12, by irradiating the 1st compound semiconductor layer 12 with a laser beam L, which is transmitted through the sapphire substrate 11 and is absorbed by the 1st compound semiconductor layer 12 from the side of the sapphire substrate 11.

公开(公告)号：JPH10326911A

公开(公告)日：1998-12-08

申请号：JP13540697

申请日：1997-05-26

Applicant: SONY CORP

Inventor： ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

IPC: H01L21/203 ,  H01L21/205 ,  H01L29/205 ,  H01L29/207 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To improve crystalline property and electrical conductivity and to uniformize a composition ratio in the growing surface of crystal and p-type impurity concentration. SOLUTION: Plural 1st layers 11, each of which consists of AlGaN mixed crystal and has about 1 to 100 nm thickness and plural 2nd layers 12 each of which is Mg-added p-type GaN and has about 1 to 100 nm thickness, are laminated alternately. Since respective layers 11, 12 are thin, the laminated layers as a whole have properties of a p-type AlGaN mixed crystal, even when Mg is not included in the 1st layers 11 and Al is not included in the 2nd layers 12. Since an Al material and a Mg material are supplied so as to be timewisely separated, reaction between the Al material and the Mg material which interfere with the growth of fine crystal can be prevented. Thereby fine crystals can be allowed to grow.

公开(公告)号：JPH05218501A

公开(公告)日：1993-08-27

申请号：JP4617092

申请日：1992-01-31

Applicant: SONY CORP

Inventor： MIYAJIMA TAKAO

IPC: H01L21/423 ,  H01L21/425 ,  H01L21/477 ,  H01L33/28 ,  H01L33/32

Abstract: PURPOSE:To improve activation ratio of impurity atom doped to a compound semiconductor crystal. CONSTITUTION:A ZnSe crystal 1 is doped with 0 atom, for example, at high concentration as p-type impurities to make at least a part thereof exist in an interstitial position. Then, atomic vacancy is formed in at least an Se atom position by irradiating electronic beam 2 to the ZnSe crystal 1. Thereafter, at least a part of 0 atom existing in the interstitial position is put in the atomic vacancy for activation.

公开(公告)号：JPH01290507A

公开(公告)日：1989-11-22

申请号：JP11860588

申请日：1988-05-16

Applicant: SONY CORP

Inventor： SUZUKI MASAYUKI ,  MORI YOSHIFUMI ,  MIYAJIMA TAKAO ,  SAITO MAKI ,  KAMIHIRA AKIRA

IPC: C01B13/14 ,  C01G1/00 ,  C01G3/00 ,  C23C16/30 ,  C23C16/448 ,  H01B12/00 ,  H01B12/06 ,  H01B13/00 ,  H01L39/24

Abstract: PURPOSE:To enable formation of a thin film having a super-lattice-structure by transporting starting materials in the form of mist onto a substrate and depositing a thin film of metal compds. to the substrate by decomposing thermally the starting materials so as to enhance controllability of film compsn., laminating thus thin films of metal compds. of several compsns. by executing further a series of operation. CONSTITUTION:Several kinds of mist contg. each atomized metal salt(atomizing device 2) is transported individually from plural reservoirs (e.g. S1, S2...) of solns. of starting metal salts onto a substrate 1 successively or simultaneously(using carrier gas such as gaseous O2). Thus, compds. contg. the metal are deposited on the substrate 1. The thin films heaped by this method form a thin film of the metal compds. by being heat-treated in desired atmosphere.

公开(公告)号：JP2014170958A

公开(公告)日：2014-09-18

申请号：JP2014094520

申请日：2014-05-01

Applicant: Sony Corp ,  ソニー株式会社 ,  Tohoku Univ ,  国立大学法人東北大学

Inventor： KURAMOTO MASARU ,  IKEDA MASAO ,  KODA RINTARO ,  OKI TOMOYUKI ,  WATANABE HIDEKI ,  MIYAJIMA TAKAO ,  YOKOYAMA HIROYUKI

IPC: H01S5/50 ,  H01S5/028 ,  H01S5/065 ,  H01S5/22 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor optical amplifier comprising a GaN-based compound semiconductor and capable of achieving still higher optical output.SOLUTION: A semiconductor optical amplifier 200 is provided with: (a) a layered structure created by sequentially stacking a first compound semiconductor layer comprising a GaN-based compound semiconductor, a third compound semiconductor layer, and a second compound semiconductor layer; (b) a second electrode 262 formed on the second compound semiconductor layer; (c) a first electrode electrically connected to the first compound semiconductor layer. The layered structure has a ridge stripe structure in which, when Wrepresents the width of the ridge stripe structure in a light emission end face 203 and Wrepresents the width of the ridge stripe structure in a light incident end face 201, W>Wis satisfied. In a region inward of the layered structure from the light emission end face 201 along an axial line AXof the semiconductor optical amplifier is provided with a carrier non-injection region 205. The second electrode 262 is configured from a first portion 262A and a second portion 262B separated by a separation groove 262C. The carrier non-injection region 205 is provided with the second portion 262B of the second electrode.

Abstract translation: 要解决的问题：提供一种包括GaN基化合物半导体并能够实现更高的光输出的半导体光放大器。解决方案：半导体光放大器200具有：（a）通过顺序堆叠第一 包含GaN基化合物半导体，第三化合物半导体层和第二化合物半导体层的化合物半导体层; （b）形成在第二化合物半导体层上的第二电极262; （c）电连接到第一化合物半导体层的第一电极。 层状结构具有脊状条纹结构，其中W表示发光端面203中的脊条结构的宽度，W表示光入射端面201中的脊条状结构的宽度，W> Wis满足。 在沿半导体光放大器的轴线AX的发光端面201的分层结构内侧的区域设置有载体非注入区域205.第二电极262由第一部分262A和第二部分 262B分隔开。 载体非注入区域205设置有第二电极的第二部分262B。