公开(公告)号：JPS62261119A

公开(公告)日：1987-11-13

申请号：JP10392286

申请日：1986-05-08

Applicant: SONY CORP

Inventor： MORITA YASUSHI ,  NODA SANEYA ,  HAYASHI HISAO ,  HOSHI TAEKO

IPC: H01L21/205

Abstract: PURPOSE:To control each nozzle individually and to easily control a selective epitaxial growth layer having excellent uniformity and controllability by a method wherein the first gas and the second gas are made to flow into a reaction furnace atmosphere using the independently provided nozzles. CONSTITUTION:When a selective epitaxial growth method is performed, the first gas having the property suitable for formation of a vapor growth film such as SiH4 gas, SiH2Cl gas and the like, and the second gas having the property suitable to perform etching on the vapor growth film, are fed into the atmosphere of the reaction furnace 1 of a vapor growth device. The epitaxial growth layer, which is formed by having well-balanced flow rate, distribution and the like of gas, can be securely controlled by independently providing the first nozzle 3 and the second nozzle 4 and by controlling these nozzles independently. By securely controlling the epitaxial growth as above-mentioned, the vapor growth film on a wafer can be formed uniformly, and the characteristics and the reproducibility of the element can be improved.

公开(公告)号：JPS62219512A

公开(公告)日：1987-09-26

申请号：JP6159286

申请日：1986-03-19

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  HOSHI TAEKO ,  MORITA YASUSHI ,  NODA SANENARI

IPC: H01L21/205 ,  H01L21/84

Abstract: PURPOSE:To obtain a semiconductor layer which extends to a side direction more than a thickness direction by vapor growth by forming an insulation layer which has a step near an exposed region of part of a semiconductor substrate on the semiconductor substrate and by carrying out the vapor growth with the atmosphere having a silicon compound and chlorine. CONSTITUTION:An insulation layer 3 consisting of SiO2 is formed on a silicon semiconductor substrate 1 except an upheaved region 2 and the region except the surface of the upheaved region 2 is covered with the insulation layer 3. The second insulation layer 4 made of SiO2 is formed on the surface of the insulation layer 3 and a step 5 due to the insulation layer 4 is formed at the position within 10mum from the exposed surface of the upheaved region 2 by selective etching. Then, the semiconductor substrate 1 is put in an epitaxial equipment, single crystal silicon semiconductor layers 6a, 6b are grown from the exposed region 2 and the step 5 of the insulation layer 4 by carrying out epitaxial growth supplying a mixed gas of SiH4 and HCl, the semiconductor layers 6a and 6b are mutually integrated by further growth treatment and a silicon semiconductor layer 6 is formed on all the surface of the semiconductor substrate 1.

公开(公告)号：JPS61289620A

公开(公告)日：1986-12-19

申请号：JP13264685

申请日：1985-06-18

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  MORITA YASUSHI ,  HAYASHI HISAO

IPC: H01L29/78 ,  H01L21/20 ,  H01L21/26 ,  H01L21/263 ,  H01L21/265

Abstract: PURPOSE:To enable to favorably perform a heat treatment on a semiconductor thin film utilizing an ultraviolet irradiation annealing method by a method wherein the good ultraviolet absorber is arranged in the vicinity of the semiconductor thin film to be formed on the substrate. CONSTITUTION:An ultraviolet irradiation annealing is applied to a semiconductor thin film (silicon thin film) 4 in a state that a good ultraviolet absorber 2 is arranged in the vicinity of the semiconductor thin film 4, thereby heat absorption into the semiconductor thin film 4 is promoted, the temperature of the semiconductor thin film 4 is made to rise and a heat treatment is applied to the semiconductor thin film 4 with the normal ultraviolet power of the ultraviolet irradiation annealing device. Accordingly an augmentation of the crystal grains of the semiconductor thin film 4 or an activation in the semiconductor thin film 4 in after an impurity is ion-implantated in the semiconductor thin film 4 can be done by an ultraviolet irradiation annealing method.

公开(公告)号：JPS61122194A

公开(公告)日：1986-06-10

申请号：JP24191784

申请日：1984-11-16

Applicant: Sony Corp

Inventor： HAYASHI HISAO ,  MORITA YASUSHI ,  NODA SANENARI

IPC: C30B25/10 ,  C23C16/46

CPC classification number: C23C16/46

Abstract: PURPOSE:A high-frequency induction coil is set on the opposite side to the surface of the inclined susceptor for placing a wafer and the wafer is heated through the susceptor to facilitate the maintenance of the unit and increase its productivity. CONSTITUTION:In a bell jar 2, a couple of plate susceptor 3 are set on the outer surface of the base which has a wedge shape cross section. A spiral of high-frequency induction coil 4 is set to the part corresponding to the susceptor 3 inside the base 1. Wafers 8 are allowed to lean on the susceptors 3 and brought into close contact by means of pins. The angle of the nozzle 6 to the susceptor 3 is adjusted and the wafers 8 are heated through base 1 and susceptors 3 by the high-frequency induction coil 4. In this state, the reaction gases and carrier gases are jetted from nozzles 7, as the nozzle set 6 are allowed to rotate around the axis. This mechanism enables the improved power efficiency for heating.

Abstract translation: 目的：将高频感应线圈设置在倾斜基座的表面的相对侧，用于放置晶片，并且晶片通过基座加热，以便于维护单元并提高其生产率。 构成：在钟罩2中，在基座的外表面上设置有一对板状基座3，其具有楔形横截面。 将高频感应线圈4的螺旋线设置在与基座1内的基座3相对应的部分。允许晶片8靠在基座3上并通过引脚紧密接触。 调节喷嘴6与基座3的角度，通过高频感应线圈4对基板1和基座3加热晶片8.在这种状态下，反应气体和载气从喷嘴7喷射，如 允许喷嘴组6绕轴线旋转。 该机构能够提高加热的功率效率。

公开(公告)号：JPH0557355B2

公开(公告)日：1993-08-23

申请号：JP28144884

申请日：1984-12-31

Applicant: SONY CORP

Inventor： NODA SANEYA ,  MORITA YASUSHI

IPC: H05B6/80 ,  C23C16/455 ,  C23C16/46 ,  H01L21/205

公开(公告)号：JPH0541448A

公开(公告)日：1993-02-19

申请号：JP22219491

申请日：1991-08-06

Applicant: SONY CORP

Inventor： MORITA YASUSHI

IPC: H01L21/76

Abstract: PURPOSE:To make it possible to form trench isolation at a high aspect ratio by forming an insulation film and an insulative trench fill-in section inside the trench. CONSTITUTION:There is formed an insulation film 13 on the lower part of the side wall of a trench 12 made in a substrate 11. A trench fill-in section 14 is put in the trench 12 where the insulation film 13 is formed. An insulative trench fill-in section 15 is formed in such a fashion that it may fill the trench 12 on the trench fill-in section 14, being connected to the insulation film 13.

公开(公告)号：JPH02272750A

公开(公告)日：1990-11-07

申请号：JP9300189

申请日：1989-04-14

Applicant: SONY CORP

Inventor： KOMATSU YUJI ,  MORITA YASUSHI

IPC: H01L21/3205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768

Abstract: PURPOSE:To reduce a contact resistance value and to enable formation of a multilayer wiring having good ohmic characteristics by irradiating ultraviolet rays to a bottom of a contact hole which is made in an interlayer insulating film on a semiconductor substrate and by filling it up with a conductive material continuously. CONSTITUTION:When a contact hole 23 is made in an interlayer insulating film 21 on a semiconductor substrate 2, a natural oxidation film 22 is formed slightly on a surface of the substrate 2 of a bottom thereof. The substrate 2 is installed in an ultraviolet ray irradiating device, and ultraviolet rays 24 are irradiated to a bottom of the contact hole 23 in reducing atmosphere. The film 22 is reduced and removed by irradiation of ultraviolet rays 24. The substrate 2 is transferred to a conductive material deposit device without being exposed to atmosphere and a conductive material 25 is filled continuously by selective vapor deposit method to form a multilayer wiring. Accordingly, it is possible to reduce a contact resistance value and to form a multilayer wiring of good ohmic characteristics, thereby improving and stabilizing device characteristics of a semiconductor device.

公开(公告)号：JPH02244712A

公开(公告)日：1990-09-28

申请号：JP6567089

申请日：1989-03-17

Applicant: SONY CORP

Inventor： SATO JUNICHI ,  WATANABE TETSUO ,  MORITA YASUSHI

IPC: H01L21/302 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

Abstract: PURPOSE:To make an average plasma flow density distribution uniform within a processing time by rotating a supporting member around its own axis so that plasma flow distributions on the surfaces of parts on a sample are always variable. CONSTITUTION:A susceptor 11 contains a sample base 8 in a planetary gear mechanism rotating around its own axis. The base 8 is coupled at its center to a planetary gear 13 through a rotational shaft 12. When a motor 16 is rotated, the gear 13 rotates around a sum gear 14 while rotating around its own shaft. Thus, a semiconductor wafer 9 supported to the base 8 is also rotated around its own axis. Accordingly, even if the density itself of a plasma flow 10 is irregular, plasma flow density to be poured thereto as seen from the parts of the water 9 is always variable, and average plasma flow density observed for a period of time longer than a predetermined degree or more is made uniform. That is, the uniformity of the distribution in the radial direction of the wafer of the average plasma flow density becomes high. Therefore, the growing speed of a CVD film to be formed is made uniform, and the uniformity of the thickness of the film becomes high.

公开(公告)号：JPH02142127A

公开(公告)日：1990-05-31

申请号：JP29524788

申请日：1988-11-22

Applicant: SONY CORP

Inventor： MORITA YASUSHI

IPC: H01L21/302

Abstract: PURPOSE:To conduct annealing for a change into a polycrystal and etching simultaneously in the same chamber, and to simplify a process by selectively irradiating an amorphous high melting-point metallic silicide film with laser beams in a halogen gas atmosphere and choicely photo-etching the amorphous high melting-point silicide film irradiated. CONSTITUTION:A tungsten silicide layer 2 as a high melting-point metallic silicide film is formed onto the surface of a semiconductor substrate 1 through low-temperature CVD, the layer 2 is brought to an amorphous state through ion implantation, and the mask 3 of a photo-resist is shaped onto the layer 2. The semiconductor substrate 1 is irradiated vertically with laser beams while using an excimer laser as a light source, and a section not hidden by the mask 3 is changed into a polycrystal and a polycrystalline layer 2a is formed onto the surface of the tungsten silicide layer. Reactive chlorine gas is excited by laser beams and turned into chlorine radicals Cl* at that time, only the polycrystalline layer 2a is etched, and the tungsten silicide layer 2 is formed to an anisotropic shape.

公开(公告)号：JPS6321818A

公开(公告)日：1988-01-29

申请号：JP16610586

申请日：1986-07-15

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  MORITA YASUSHI

IPC: H01L21/20 ,  H01L21/324

Abstract: PURPOSE:To make it possible to obtain rapidly a polycrystalline semiconductor thin film having crystal particles of a large particle size, by applying heat treatment to an amorphous semiconductor thin film in a heating furnace after energy beams are applied thereto. CONSTITUTION:Silicon ions Si are implanted into a semiconductor thin film formed on a substrate, so as to make it amorphous. Next, excimer laser is applied to said semiconductor thin film. Thereafter, it is annealed by a heating furnace whose temperature is 600 deg.C or below, for instance. By applying the excimer laser to the semiconductor thin film before annealing, in this way, the amorphous semiconductor thin film can be put in an amorphous state which is found just before polycrystallization. Thus, a time required for generation is made to be zero substantially, and the size of a crystal particle which can be made to grow in the same annealing time can be made larger than usual.