公开(公告)号：DE69030709D1

公开(公告)日：1997-06-19

申请号：DE69030709

申请日：1990-10-24

Applicant: SONY CORP

Inventor： SATO JUNICHI ,  GOCHO TETSUO ,  MORITA YASUSHI

IPC: H01L21/76 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/762 ,  H01L21/316 ,  H01L21/00

Abstract: A semiconductor device manufacturing process and a bias ECRCVD apparatus for carrying out the same. The semiconductor device manufacturing process comprises steps of forming trenches in the surface of a substrate, forming an insulating film by bias ECRCVD over the surface of the substrate, etching the insulating film by lateral leveling etching to expand the width of grooves formed in portions of the insulating film formed in regions other than those corresponding to the trenches, masking the portions of the insulating film filling up the trenches and removing the portions of the insulating film formed in the regions other than those corresponding to the trenches. An etching stop layer is formed over the surface of the substrate before forming the trenches and the insulating film, and the etching stop layer is removed by etching after removing the portions of the insulating film formed in the regions other than those corresponding to the trenches by etching with the portions of the insulating film filling up the trenches masked. The surfaces of the portions of the insulating film filling up the trenches are finished flush with the surface of the substrate. Desirably, the etching stop layer is annealed to make the grains grow making the surface of the etching stop layer smooth to enable the complete removal of the portions of the insulating film formed in the regions other than those corresponding to the trenches.

公开(公告)号：FR2573325A1

公开(公告)日：1986-05-23

申请号：FR8516907

申请日：1985-11-15

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  MORITA YASUSHI ,  NODA MITSUNARI

IPC: C23C16/46 ,  B01J16/00

Abstract: A method and apparatus for depositing a film on a wafer type substrate by vapor deposition. A planar, plate-like susceptor is positioned in a reaction chamber at an angle which is inclined with respect to the horizontal. The wafer is heated to a deposition temperature by means of a radio frequency induction coil which is positioned in close proximity to the susceptor, on the opposite side thereof. A gas inlet means is provided to introduce a decomposable compound of the film to be deposited. The gas inlet means is preferably angularly adjustable relative to the susceptor and is also rotatable on its own axis. Large diameter wafers can be effectively processed with this system in a compact apparatus.

公开(公告)号：DE3540628C2

公开(公告)日：1994-09-29

申请号：DE3540628

申请日：1985-11-15

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  MORITA YASUSHI ,  NODA MITSUNARI

IPC: C23C16/46

Abstract: A method and apparatus for depositing a film on a wafer type substrate by vapor deposition. A planar, plate-like susceptor is positioned in a reaction chamber at an angle which is inclined with respect to the horizontal. The wafer is heated to a deposition temperature by means of a radio frequency induction coil which is positioned in close proximity to the susceptor, on the opposite side thereof. A gas inlet means is provided to introduce a decomposable compound of the film to be deposited. The gas inlet means is preferably angularly adjustable relative to the susceptor and is also rotatable on its own axis. Large diameter wafers can be effectively processed with this system in a compact apparatus.

公开(公告)号：FR2573325B1

公开(公告)日：1993-08-20

申请号：FR8516907

申请日：1985-11-15

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  MORITA YASUSHI ,  NODA MITSUNARI

IPC: C23C16/46 ,  B01J16/00

Abstract: A method and apparatus for depositing a film on a wafer type substrate by vapor deposition. A planar, plate-like susceptor is positioned in a reaction chamber at an angle which is inclined with respect to the horizontal. The wafer is heated to a deposition temperature by means of a radio frequency induction coil which is positioned in close proximity to the susceptor, on the opposite side thereof. A gas inlet means is provided to introduce a decomposable compound of the film to be deposited. The gas inlet means is preferably angularly adjustable relative to the susceptor and is also rotatable on its own axis. Large diameter wafers can be effectively processed with this system in a compact apparatus.

公开(公告)号：DE69030709T2

公开(公告)日：1997-12-18

申请号：DE69030709

申请日：1990-10-24

Applicant: SONY CORP

Inventor： SATO JUNICHI ,  GOCHO TETSUO ,  MORITA YASUSHI

IPC: H01L21/76 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/762 ,  H01L21/316 ,  H01L21/00

Abstract: A semiconductor device manufacturing process and a bias ECRCVD apparatus for carrying out the same. The semiconductor device manufacturing process comprises steps of forming trenches in the surface of a substrate, forming an insulating film by bias ECRCVD over the surface of the substrate, etching the insulating film by lateral leveling etching to expand the width of grooves formed in portions of the insulating film formed in regions other than those corresponding to the trenches, masking the portions of the insulating film filling up the trenches and removing the portions of the insulating film formed in the regions other than those corresponding to the trenches. An etching stop layer is formed over the surface of the substrate before forming the trenches and the insulating film, and the etching stop layer is removed by etching after removing the portions of the insulating film formed in the regions other than those corresponding to the trenches by etching with the portions of the insulating film filling up the trenches masked. The surfaces of the portions of the insulating film filling up the trenches are finished flush with the surface of the substrate. Desirably, the etching stop layer is annealed to make the grains grow making the surface of the etching stop layer smooth to enable the complete removal of the portions of the insulating film formed in the regions other than those corresponding to the trenches.

公开(公告)号：GB2169003B

公开(公告)日：1987-12-31

申请号：GB8528217

申请日：1985-11-15

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  MORITA YASUSHI ,  NODA MITSUNARI

IPC: C23C16/46 ,  C23C16/00

Abstract: A method and apparatus for depositing a film on a wafer type substrate by vapor deposition. A planar, plate-like susceptor is positioned in a reaction chamber at an angle which is inclined with respect to the horizontal. The wafer is heated to a deposition temperature by means of a radio frequency induction coil which is positioned in close proximity to the susceptor, on the opposite side thereof. A gas inlet means is provided to introduce a decomposable compound of the film to be deposited. The gas inlet means is preferably angularly adjustable relative to the susceptor and is also rotatable on its own axis. Large diameter wafers can be effectively processed with this system in a compact apparatus.

公开(公告)号：DE3540628A1

公开(公告)日：1986-07-03

申请号：DE3540628

申请日：1985-11-15

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  MORITA YASUSHI ,  NODA MITSUNARI

IPC: C23C16/46 ,  C23C16/50

Abstract: A method and apparatus for depositing a film on a wafer type substrate by vapor deposition. A planar, plate-like susceptor is positioned in a reaction chamber at an angle which is inclined with respect to the horizontal. The wafer is heated to a deposition temperature by means of a radio frequency induction coil which is positioned in close proximity to the susceptor, on the opposite side thereof. A gas inlet means is provided to introduce a decomposable compound of the film to be deposited. The gas inlet means is preferably angularly adjustable relative to the susceptor and is also rotatable on its own axis. Large diameter wafers can be effectively processed with this system in a compact apparatus.

公开(公告)号：GB2169003A

公开(公告)日：1986-07-02

申请号：GB8528217

申请日：1985-11-15

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  MORITA YASUSHI ,  NODA MITSUNARI

IPC: C23C16/46 ,  C23C16/00

Abstract: A method and apparatus for depositing a film on a wafer type substrate by vapor deposition. A planar, plate-like susceptor is positioned in a reaction chamber at an angle which is inclined with respect to the horizontal. The wafer is heated to a deposition temperature by means of a radio frequency induction coil which is positioned in close proximity to the susceptor, on the opposite side thereof. A gas inlet means is provided to introduce a decomposable compound of the film to be deposited. The gas inlet means is preferably angularly adjustable relative to the susceptor and is also rotatable on its own axis. Large diameter wafers can be effectively processed with this system in a compact apparatus.

公开(公告)号：JP2000307001A

公开(公告)日：2000-11-02

申请号：JP11486699

申请日：1999-04-22

Applicant: SONY CORP

Inventor： MORITA YASUSHI

IPC: H01L21/302 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To obtain a manufacturing method which makes it possible to form a minute contact hole with good reproducibility by stably removing the etching stopper film, which covers the contact region, with good controllability without causing etching of the layer insulation film, when forming the contact hole by using the SAC technology which provides an etching stopper film under an interlayer insulation film. SOLUTION: Over a conductive region 22 which is sandwiched between two SiO2 side walls 24 of gate electrodes 20, an SiN etching stopper film 26, a BPSG interlayer insulation film 28, a TiN cover film 30 are formed in the described order. After forming a hole by selectively etching the TiN cover film 30 and BPSG interlayer insulation film 28, the SiN etching stopper film 26 of the bottom of the bore is selectively etched while using the TiN cover film 30 as a mask so as to form a contact hole 40 which reaches the conductive region 22.

公开(公告)号：JP2550998B2

公开(公告)日：1996-11-06

申请号：JP13552287

申请日：1987-05-29

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  MORITA YASUSHI

IPC: H01L21/20 ,  H01L21/263 ,  H01L21/84