公开(公告)号：FR2809227B1

公开(公告)日：2002-08-16

申请号：FR0006300

申请日：2000-05-17

Applicant: ST MICROELECTRONICS SA

Inventor： ROY MATHIEU

IPC: H01L21/331 ,  H01L23/31 ,  H01L29/06 ,  H01L29/417 ,  H01L29/732 ,  H01L29/74 ,  H01L21/30

Abstract: A power component formed in an N-type silicon substrate, the lower and upper surfaces of which respectively include a first and a second P-type region that do not extend to the component periphery, a high voltage being capable of existing between the first and second regions and having to be withstood by the junctions between the first and second regions and the substrate. A deep insulating region that does not join the first region is provided at the lower periphery of the component, the lower surface of the substrate between said deep insulating region and the first region being coated with an insulating layer, the height of the deep insulating region being greater than that of a possible soldering upward extension formed during the soldering of the lower surface on a heat sink.

公开(公告)号：FR2788166B1

公开(公告)日：2001-03-09

申请号：FR9816771

申请日：1998-12-31

Applicant: ST MICROELECTRONICS SA

Inventor： JALADE JEAN ,  SANCHEZ JEAN LOUIS ,  LAUR JEAN PIERRE ,  BREIL MARIE ,  AUSTIN PATRICK ,  BERNIER ERIC ,  ROY MATHIEU

IPC: H01L29/74 ,  H01L21/822 ,  H01L27/04 ,  H01L27/06 ,  H01L29/739 ,  H01L29/78 ,  H01L27/07 ,  H02M1/00 ,  H03K17/567