公开(公告)号：FR2779274B1

公开(公告)日：2000-08-18

申请号：FR9806687

申请日：1998-05-27

Applicant: ST MICROELECTRONICS SA

Inventor： GAYET PHILIPPE ,  GRANGER ERIC

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L21/28

Abstract: Precision selective etching is carried out such that when an offset channel (20) is produced, it extends to a stop zone, and the channel metallization touches the side as well as the base portion of the lower via.

公开(公告)号：DE69114595T2

公开(公告)日：1996-05-02

申请号：DE69114595

申请日：1991-07-16

Applicant: FRANCE TELECOM

Inventor： GALVIER JEAN ,  GAYET PHILIPPE ,  TISSIER ANNIE

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/66 ,  H01L21/768 ,  G01B11/06 ,  H01L21/321

Abstract: The present invention relates to a process for determining the complete removal of a thin layer (3) deposited on a substrate (1). This process comprises the steps consisting in providing on a zone of the substrate (1) an optical diffraction grating (2, 2'), the thin layer deposited on the substrate also overlapping this diffraction grating, and the etching of the thin layer also being done in the region of this diffraction grating; in illuminating the grating (2, 2') with a monochromatic light beam; and in observing the change in the diffracted light during the operation of etching the thin layer, so as to determine the instant at which the material of the thin layer is wholly eliminated. … …

公开(公告)号：DE69114595D1

公开(公告)日：1995-12-21

申请号：DE69114595

申请日：1991-07-16

Applicant: FRANCE TELECOM

Inventor： GALVIER JEAN ,  GAYET PHILIPPE ,  TISSIER ANNIE

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/66 ,  H01L21/768 ,  G01B11/06 ,  H01L21/321

Abstract: The present invention relates to a process for determining the complete removal of a thin layer (3) deposited on a substrate (1). This process comprises the steps consisting in providing on a zone of the substrate (1) an optical diffraction grating (2, 2'), the thin layer deposited on the substrate also overlapping this diffraction grating, and the etching of the thin layer also being done in the region of this diffraction grating; in illuminating the grating (2, 2') with a monochromatic light beam; and in observing the change in the diffracted light during the operation of etching the thin layer, so as to determine the instant at which the material of the thin layer is wholly eliminated. … …