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公开(公告)号:ITTO20101050A1
公开(公告)日:2012-06-24
申请号:ITTO20101050
申请日:2010-12-23
Applicant: ST MICROELECTRONICS SRL
Inventor: MORELLI MARCO , PACI DARIO , RIVA CATERINA
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公开(公告)号:DE60019274D1
公开(公告)日:2005-05-12
申请号:DE60019274
申请日:2000-11-29
Applicant: ST MICROELECTRONICS SRL
Inventor: MAGGIONI GIAMPIETRO , GALLINARI MAURIZIO , SERRATONI CLAUDIO , MORELLI MARCO
Abstract: The invention relates to a loop-type voltage regulating device (10), particularly for regulating a voltage of an automotive electric system, being of a type which includes at least one thermal engine (15), a voltage regulator (13) and an alternator (11) operative to deliver a system regulated-voltage signal (A+) to and receive a regulation signal (DF) from the voltage regulator (13). Advantageously, according to the invention, the voltage regulating device further includes a control unit (14) within the regulating loop, which unit is connected between the thermal engine (15) and the voltage regulator (13) and is adapted to supply the latter with a signal related to the engine operation.
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公开(公告)号:IT1318017B1
公开(公告)日:2003-07-21
申请号:ITMI20001321
申请日:2000-06-13
Applicant: ST MICROELECTRONICS SRL
Inventor: MAGGIONI GIAMPIETRO , GALLINARI MAURIZIO , SERRATONI CLAUDIO , MORELLI MARCO
Abstract: The invention relates to a loop-type voltage regulating device (10), particularly for regulating a voltage of an automotive electric system, being of a type which includes at least one thermal engine (15), a voltage regulator (13) and an alternator (11) operative to deliver a system regulated-voltage signal (A+) to and receive a regulation signal (DF) from the voltage regulator (13). Advantageously, according to the invention, the voltage regulating device further includes a control unit (14) within the regulating loop, which unit is connected between the thermal engine (15) and the voltage regulator (13) and is adapted to supply the latter with a signal related to the engine operation.
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公开(公告)号:ITUB20155176A1
公开(公告)日:2017-04-28
申请号:ITUB20155176
申请日:2015-10-28
Applicant: ST MICROELECTRONICS SRL
Inventor: SCURATI MARIO GIOVANNI , MORELLI MARCO
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公开(公告)号:ITTO20100083A1
公开(公告)日:2011-08-06
申请号:ITTO20100083
申请日:2010-02-05
Applicant: ST MICROELECTRONICS SRL
Inventor: MORELLI MARCO , PACI DARIO , RIVA CATERINA
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公开(公告)号:ES2194091T3
公开(公告)日:2003-11-16
申请号:ES96830610
申请日:1996-12-05
Applicant: ST MICROELECTRONICS SRL , MAGNETI MARELLI POWERTRAIN SPA
Inventor: MILANESI ANDREA , POLETTO VANNI , POMA ALBERTO , MORELLI MARCO
IPC: G05F1/575
Abstract: A voltage-regulator circuit with a low voltage drop using a DMOS power transistor (PT) driven by a charge pump (CP) comprises two feedback loops: a first feedback loop having high gain and accuracy but low response speed, and a second feedback loop having a wide passband and fast response speed but low gain.
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公开(公告)号:DE69626991D1
公开(公告)日:2003-04-30
申请号:DE69626991
申请日:1996-12-05
Applicant: ST MICROELECTRONICS SRL , MAGNETI MARELLI POWERTRAIN SPA
Inventor: MILANESI ANDREA , POLETTO VANNI , POMA ALBERTO , MORELLI MARCO
IPC: G05F1/575
Abstract: A voltage-regulator circuit with a low voltage drop using a DMOS power transistor (PT) driven by a charge pump (CP) comprises two feedback loops: a first feedback loop having high gain and accuracy but low response speed, and a second feedback loop having a wide passband and fast response speed but low gain.
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公开(公告)号:DE69227244T2
公开(公告)日:1999-03-04
申请号:DE69227244
申请日:1992-07-28
Applicant: ST MICROELECTRONICS SRL
Inventor: POLETTO VANNI , MORELLI MARCO
IPC: H01L29/73 , G05F1/569 , H01L21/331 , H03K17/0422 , G05F1/56 , H03K17/04
Abstract: Saturation of a bipolar power transistor is controlled by sensing the current which is eventually injected into the substrate of the integrated circuit by the saturating transistor and using this signal for exerting a limiting action on the current which is driven to the base of the power transistor by a dedicated driving circuit. Differently from the prior art antisaturation systems, it is no longer necessary to precisely monitor the operating voltages across the terminals of the bipolar power transistor. A suitable sensing resistance may be integrated conveniently at a distance from the often complex integrated structure of the bipolar transistor. The system of the invention offers numerous advantages and ensures intervention of the antisaturation circuit only when the power transistor has positively reached a state of saturation, but well before any unwanted consequence.
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公开(公告)号:ES2120974T3
公开(公告)日:1998-11-16
申请号:ES92112639
申请日:1992-07-23
Applicant: ST MICROELECTRONICS SRL , MAGNETI MARELLI SPA
Inventor: MAZZUCCO MICHELANGELO , POLETTO VANNI , MORELLI MARCO
IPC: G01N27/409 , H03F3/45
Abstract: In order to achieve a high input dynamic range as well as high CMRR and PSRR values and input impedance with the use of a single supply voltage (Vcc), the amplifier includes an input stage with two transistors (Q1, Q2) which are biased by a constant current (IP3, IP4), preferably of less than 1 microampere, and the collectors of the transistors (Q1, Q2) are kept at fixed reference voltages (VR1, VR2). The input signal (VIN) applied between the emitters (IN(-), IN(+)) of the transistors (Q1, Q2) is transferred to the terminals of a first resistor (R1) which is supplied with current (IR1) from a circuit (M7, A5, R3; M10, Q6, R4; M9, Q7, R5) which mirrors the current (IR1) into a second resistor (R6), from the terminals of which the output signal (VOUT) is taken. The preferred application is for forming interfaces for lambda probes fitted to catalytic converters for motor vehicles.
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公开(公告)号:DE69227244D1
公开(公告)日:1998-11-12
申请号:DE69227244
申请日:1992-07-28
Applicant: ST MICROELECTRONICS SRL
Inventor: POLETTO VANNI , MORELLI MARCO
IPC: H01L29/73 , G05F1/569 , H01L21/331 , H03K17/0422 , G05F1/56 , H03K17/04
Abstract: Saturation of a bipolar power transistor is controlled by sensing the current which is eventually injected into the substrate of the integrated circuit by the saturating transistor and using this signal for exerting a limiting action on the current which is driven to the base of the power transistor by a dedicated driving circuit. Differently from the prior art antisaturation systems, it is no longer necessary to precisely monitor the operating voltages across the terminals of the bipolar power transistor. A suitable sensing resistance may be integrated conveniently at a distance from the often complex integrated structure of the bipolar transistor. The system of the invention offers numerous advantages and ensures intervention of the antisaturation circuit only when the power transistor has positively reached a state of saturation, but well before any unwanted consequence.
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