公开(公告)号：JPH01122974A

公开(公告)日：1989-05-16

申请号：JP28176287

申请日：1987-11-06

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SATO KEIICHI ,  KUMAZAWA YOSHIAKI ,  URAKAWA NOBUO ,  SUMIYA HITOSHI

IPC: C04B37/00 ,  H01L23/36 ,  H01L23/373

Abstract: PURPOSE:To join firmly a sintered product of cubic BN to a shank material without cracking and reduction in properties, by forming a Ti film and a Ni film on the joining face of the cubic BN sintered product, placing pure Al foil or Al-Ni alloy foil on the joining face between the sintered product and the shank material. CONSTITUTION:A Ti film 0.01mu thick is formed on the joining face of a cubic BN sintered product to be joined, for example, by spattering, then another Ni film 0.01-5mu thick. An Al foil or an alloy thereof with Ni (of more than 90% Al and less than 10% Ni) is placed between the joining face of the sintered product and that of a shank material made of, e.g., W-10% Cu alloy and heated at a temperature from the melting point of Al or the Al-Ni alloy to 750 deg.C in a vacuum or inert gas atmosphere to join them firmly.

公开(公告)号：JP2000133752A

公开(公告)日：2000-05-12

申请号：JP30421398

申请日：1998-10-26

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NAGAI MASAKI ,  KUMAZAWA YOSHIAKI ,  TANABE KEIICHIRO

IPC: H01L23/373

Abstract: PROBLEM TO BE SOLVED: To improve the thermal conductivity of a diamond heat sink and facilitate its machining by forming the whole or a portion of its vapor-phase diamond, mechanically divided portions which are ranged over the entire outer periphery of the side surface of the diamond heat sink. SOLUTION: A diamond coating is applied to a substrate by a vapor-phase synthesis method (101), and the surface of the diamond is subjected to a grinding machining to concurrently machine the composite substrate so as to equalize its thickness to the one of the heat sink of a final product (102). Then, grooving is applied to the composite substrate (its bottom surface side), (103), and a process is inserted continuously into the manufacture of the heat sink, as necessary, wherein the composite substrate is supported directing its diamond side to upper side to apply a grooving by a laser to its diamond side (104). Subsequently, metallization processings are applied to the upper and lower sides of the composite substrate (105), and as a final process, the vapor-phase diamond composite substrate is divided in one breath into a plurality of partial portions by applying to it mechanical forces along its grooves machined through the diamond sawings, so as to manufacture (106) the heat sink of the final product.

公开(公告)号：JPH09235200A

公开(公告)日：1997-09-09

申请号：JP4316296

申请日：1996-02-29

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： OTA YUKIHIRO ,  KUMAZAWA YOSHIAKI

IPC: C30B29/02 ,  C23C18/31 ,  C30B33/00 ,  H01L21/288

Abstract: PROBLEM TO BE SOLVED: To obtain a metal film-formed inorganic crystal substance having a metal later stably formed in an inorganic crystal substance such as diamond, aluminum nitride or gallium arsenate in a high adhesion strength, and provide a method (metallizing method) for efficiently forming the metal layer at a low temperature. SOLUTION: This metal film-formed inorganic crystal substance in which the just overhead of the surface of a metal film-forming site of the group III-V element inorganic crystal substance or the group IV element inorganic crystal substance is covered with nitrogen atoms in the thickness of 0.5-1.0 atomic layer (monolayer) and in which a metal film layer is formed on the nitrogen atom layer. This method for producing the metal film-formed inorganic crystal substances comprises irradiating a part or the whole parts of the surface of the inorganic crystal substance with 10-260nm light in the atmosphere of the mixture of molecules containing one or both kinds of nitrogen atoms and hydrogen atoms or in an aqueous solution and subsequently subjecting the inorganic crystal substance to an electroless plating treatment to form a metal film layer on the irradiated surface.

公开(公告)号：JP2567442B2

公开(公告)日：1996-12-25

申请号：JP3750188

申请日：1988-02-22

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA KATSUYUKI ,  KUMAZAWA YOSHIAKI ,  URAKAWA NOBUO

IPC: H01L23/40 ,  H01L21/52

公开(公告)号：JPH0127141B2

公开(公告)日：1989-05-26

申请号：JP17624580

申请日：1980-12-12

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NAKAI TETSUO ,  YATSU SHUJI ,  HARA AKIO ,  KUMAZAWA YOSHIAKI

IPC: C22C1/05 ,  B21C3/02 ,  C04B35/52 ,  C22C26/00 ,  C22C29/00

公开(公告)号：JPH10244144A

公开(公告)日：1998-09-14

申请号：JP4908997

申请日：1997-03-04

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAMOTO YOSHIYUKI ,  SEKI YUICHIRO ,  TANABE KEIICHIRO ,  KUMAZAWA YOSHIAKI

IPC: B01J3/00 ,  C30B29/04

Abstract: PROBLEM TO BE SOLVED: To produce a pressure partition wall superior in light transmission characteristics in a high yield and at a low cost by using diamond obtained by a gas phase synthetic method as a pressure partition wall raw material for partitioning two spaces different from pressures, and arranging the partition wall raw material such that a low pressure side is projectedly. SOLUTION: In the pressure partition wall used to a pressurizing device, etc., especially a window for ultra high vacuum device, etc., having light transmission property in a broad range and also having >= one atm pressure resistance, the diamond obtained by the gas phase synthetic method is used as the partition wall raw material 11. A thin diamond plate obtained by the gas phase synthetic method causes frequently to warp by stress induced at a time of the synthesis. The thin diamond plate is normally set such that the low pressure side is projectedly. At this time, a warp value |ΔH|between the peripheral part of the partition wall raw material 11 and the central part is made into 5μm

公开(公告)号：JPH1081586A

公开(公告)日：1998-03-31

申请号：JP25387396

申请日：1996-09-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAMOTO YOSHIYUKI ,  YOSHIDA KENTARO ,  IMAI TAKAHIRO ,  KUMAZAWA YOSHIAKI

IPC: C30B29/04 ,  C23C16/26 ,  C23C16/27 ,  C23C16/511 ,  C23C16/56

Abstract: PROBLEM TO BE SOLVED: To prepare a diamond film having a high thermal conductivity suitable as a heat sink, etc., and to provide a method for producing the diamond film at a low cost. SOLUTION: Diamond is vapor synthesized on a substrate initially at a low speed to nucleate crystals having a large grain diameter and then vapor synthesized at a high speed to increase the grain diameter of columnar crystals in the thickness direction. The substrate is further removed to thereby prepare a self-supporting film of the diamond. The side of the substrate is more preferably ground to remove a part of a small grain diameter on the side of the substrate. As a result, a diamond as an aggregate of the columnar crystals having the large grain diameter is obtained. Since the resultant diamond is the columnar crystals and has the large grain diameter and slight grain boundaries in the thickness direction, the thermal conductivity κt in the thickness direction is >=13W/cmK. Since the growth rate in the second stage is high, the growth rate is considerably high and the cost for the synthesis can be reduced. Since the thermal conductivity is increased without relying on a method for reducing the growth rate as in a conventional method, the diamond having a high thermal conductivity in the thickness direction can be prepared at a low cost. The diamond having a high thermal conductivity of >=13W/cmK is obtained even when the half-width of the peak at 1332cm wave number in the Raman scattering spectroscopy is >=4cm .

公开(公告)号：JPH0349834A

公开(公告)日：1991-03-04

申请号：JP18055089

申请日：1989-07-14

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA KATSUYUKI ,  KUMAZAWA YOSHIAKI ,  URAKAWA NOBUO

IPC: B23B27/14 ,  B23K20/00 ,  B23P15/28 ,  C04B37/02

Abstract: PURPOSE:To perform the joining of a blank at low temperature and to use it at high temperature by forming a joining layer composed of gold by a heat adhesion between a blank and shank in a tool consisting of the blank and shank. CONSTITUTION:An adhesion reinforcing layer 3 consisting of the metal easy to make a blank and compound is provided on a blank 1, a diffusion preventing layer 4 for preventing the metal elements of the adhesion reinforcing layer 3 from being alloyed with the diffusion to the layer of the gold of a joining member is then provided and a diffusion preventing layer 5 is provided on a shank 2 as well. Gold layers 6, 7 are respectively coated on the surface of the diffusion preventing layer 4 of the blank 1 and the surface of the diffusion preventing layer 5 of the shank 2 and a gold thin piece 8 is inserted between the both. The blank 1 and shank 2 are heated in this state, the gold layers 6, 7, 8 are plastically deformed, the gold is joined on an atomic level and the blank 1 and thank 2 are joined.

公开(公告)号：JPH01214053A

公开(公告)日：1989-08-28

申请号：JP3750188

申请日：1988-02-22

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA KATSUYUKI ,  KUMAZAWA YOSHIAKI ,  URAKAWA NOBUO

IPC: H01L23/40 ,  H01L21/52

Abstract: PURPOSE:To obtain a semiconductor device which can be used at a high temperature, whose thermal conduction at a bonded part is good, can be obtained by bonding a heat sink to a carrier and is composed of a chip, the heat sink and the carrier by a method wherein the heat sink and the carrier are bonded by a thermal pressure bonding method using gold as a bonding material. CONSTITUTION:In a semiconductor device where a chip is united with a carrier 2 via a heat sink 1, the heat sink 1 and the carrier 2 are bonded by a thermal pressure bonding operation using gold as a bonding material. For example, a three-layer coating composed of a titanium layer 3 (600Angstrom thick), a platinum layer 4 (800Angstrom thick) and a gold layer 6 (1mum thick) is formed on the surface of a diamond heat sink 10.55mm square by an evaporation method under conditions of a pressure of 5X10 Torr, at a substrate temperature of 200 deg.C and at a speed of 10Angstrom /sec. A two-layer coating composed of a nickel layer 5 (3mum) and a gold layer 7 (3mum) is formed on the surface of oxygen-free copper of a carrier 2 by an electrolytic plating operation. After that, a thin gold piece 8 with a thickness of 50mum is inserted between the heat sink 1 and the carrier 2; both are heated to 270 deg.C; after that, they are pressurized by a force of 1000gf and a thermal pressure-bonding operation is executed.

公开(公告)号：JPH01129961A

公开(公告)日：1989-05-23

申请号：JP29031287

申请日：1987-11-16

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： IGUCHI TAKEHISA ,  KUMAZAWA YOSHIAKI ,  URAKAWA NOBUO

IPC: C23C14/14 ,  C23C14/18 ,  C23C14/24 ,  H01L23/373

Abstract: PURPOSE:To carry out the physical vapor deposition of an alloy film of the desired composition accurately, easily, and economically by simultaneously evaporating an alloy of the desired composition and an easily evaporable component among the constituent elements, as simple substances, of the alloy from separate evaporation sources. CONSTITUTION:An alloy, such as Au-Sn alloy, of the desired composition is used for an evaporation source 1 in a vapor deposition apparatus and an easily evaporable metal, such as Sn, among the constituent elements of this alloy is used for an evaporation source 2, and then, a shutter 3 is opened and vapor deposition onto an object 4 to be subjected to vapor deposition is carried out. Both of the above evaporation sources 1, 2 are simultaneously evaporated, and respective evaporation velocities of the sources 1, 2 are controlled by means of film-thickness monitors 5, 6, respectively. By this method, the easily evaporable metallic element dissipating from the alloy is supplied from the evaporation source 2 while properly controlling the amount of evaporation, and the alloy film of the desired composition can be uniformly vapor-deposited onto the surface of the object 4 to be subjected to vapor deposition.