公开(公告)号：US20180108806A1

公开(公告)日：2018-04-19

申请号：US15857853

申请日：2017-12-29

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Wenhong Sun ,  Jinwei Yang ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/06 ,  H01L21/02 ,  H01L29/778 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L29/0688 ,  H01L29/2003 ,  H01L29/518 ,  H01L29/7786 ,  H01L33/007 ,  H01L33/12 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0083 ,  H01L2933/0091

Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.

公开(公告)号：US09923117B2

公开(公告)日：2018-03-20

申请号：US14984156

申请日：2015-12-30

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Alexander Lunev ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/32 ,  H01L33/10 ,  H01L33/00 ,  H01L33/12 ,  H01L33/46

CPC classification number: H01L33/10 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  H01L33/46

Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.

公开(公告)号：US20180069151A1

公开(公告)日：2018-03-08

申请号：US15797282

申请日：2017-10-30

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Maxim S. Shatalov ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/04 ,  H01L33/46 ,  H01L33/40 ,  H01L33/38 ,  H01L33/14 ,  H01L33/10 ,  H01L33/22

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/10 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/405 ,  H01L33/46 ,  H01L2933/0058

Abstract: A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.

公开(公告)号：US20180053879A1

公开(公告)日：2018-02-22

申请号：US15784905

申请日：2017-10-16

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Lunev ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/38 ,  H01L33/14 ,  H01L31/0224 ,  H01L33/00 ,  H01L33/40 ,  H01L31/00 ,  H01L33/08 ,  H01L33/24

CPC classification number: H01L33/40 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L31/00 ,  H01L31/022408 ,  H01L31/03365 ,  H01L33/002 ,  H01L33/08 ,  H01L33/14 ,  H01L33/24 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405

Abstract: A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.

公开(公告)号：US20180036444A1

公开(公告)日：2018-02-08

申请号：US15785687

申请日：2017-10-17

Applicant: Sensor Electronic Technology, Inc.

Inventor： Timothy James Bettles ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: A61L2/10

CPC classification number: A61L2/10 ,  A61L2202/14 ,  A61L2202/16

Abstract: A solution for disinfecting flowable products, such as liquids, suspensions, creams, colloids, emulsions, powders, and/or the like, as well as accessories and products relating thereto, such as containers, caps, brushes, applicators, and/or the like, using ultraviolet radiation is provided. In an embodiment, an ultraviolet impermeable cap is configured to enclose a volume corresponding to a flowable product. At least one ultraviolet radiation source can be mounted on the cap and be configured to generate ultraviolet radiation for disinfecting the enclosed area. The ultraviolet radiation source can be configured to only generate ultraviolet radiation when the volume is enclosed by the ultraviolet impermeable cap.

公开(公告)号：US20180026157A1

公开(公告)日：2018-01-25

申请号：US15706990

申请日：2017-09-18

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Jinwei Yang ,  Michael Shur ,  Grigory Simin

IPC: H01L33/22 ,  H01L29/15 ,  H01L33/38 ,  H01L21/02 ,  H01L23/00 ,  H01L33/30

CPC classification number: H01L33/22 ,  H01L21/02496 ,  H01L24/05 ,  H01L24/14 ,  H01L29/151 ,  H01L33/30 ,  H01L33/32 ,  H01L33/38 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/1134 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.

公开(公告)号：US20170373224A1

公开(公告)日：2017-12-28

申请号：US15682031

申请日：2017-08-21

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/16 ,  H01L33/58 ,  H01L33/20 ,  H01L33/00 ,  C30B29/68 ,  H01S5/022 ,  C30B29/40

Abstract: An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.

公开(公告)号：US20170340761A1

公开(公告)日：2017-11-30

申请号：US15622004

申请日：2017-06-13

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Timothy James Bettles ,  Yuri Bilenko ,  Saulius Smetona ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: A61L2/10

CPC classification number: A61L2/10 ,  A61L9/20 ,  A61L2202/14 ,  F25D3/00 ,  F25D3/04 ,  G05D23/00

Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a virus destruction operating configuration and a bacteria disinfection operating configuration. Each configuration can include a unique combination of the target wavelength range and target intensity range.

公开(公告)号：US09806226B2

公开(公告)日：2017-10-31

申请号：US15257316

申请日：2016-09-06

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Maxim S. Shatalov ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/14 ,  H01L33/10 ,  H01L33/40 ,  H01L33/46 ,  H01L33/04 ,  H01L33/38 ,  H01L33/22

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/10 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/405 ,  H01L33/46 ,  H01L2933/0058

Abstract: A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.

公开(公告)号：US09799793B2

公开(公告)日：2017-10-24

申请号：US15391948

申请日：2016-12-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Daniel Billingsley ,  Robert M. Kennedy ,  Wenhong Sun ,  Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/06 ,  H01L33/00 ,  H01L33/32 ,  H01L33/12 ,  H01L29/778 ,  H01L29/66 ,  H01L33/20 ,  H01L33/24

CPC classification number: H01L33/0025 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/16225

Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.