公开(公告)号：US20190055121A1

公开(公告)日：2019-02-21

申请号：US16106649

申请日：2018-08-21

Applicant: SiTime Corporation

Inventor： Aaron Partridge ,  Markus Lutz ,  Pavan Gupta

IPC: B81C1/00 ,  B81B7/00 ,  H01L41/113 ,  H01L23/051

CPC classification number: B81C1/00277 ,  B81B7/0035 ,  B81B7/0058 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/0171 ,  B81C2203/031 ,  B81C2203/036 ,  B81C2203/037 ,  B81C2203/038 ,  H01L23/051 ,  H01L41/1136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

公开(公告)号：US20180044176A1

公开(公告)日：2018-02-15

申请号：US15686480

申请日：2017-08-25

Applicant: SiTime Corporation

Inventor： Aaron Partridge ,  Markus Lutz ,  Pavan Gupta

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00277 ,  B81B7/0035 ,  B81B7/0058 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/0171 ,  B81C2203/031 ,  B81C2203/036 ,  B81C2203/037 ,  B81C2203/038 ,  H01L23/051 ,  H01L41/1136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

公开(公告)号：US09821998B2

公开(公告)日：2017-11-21

申请号：US15187748

申请日：2016-06-20

Applicant: SiTime Corporation

Inventor： Pavan Gupta ,  Aaron Partridge ,  Markus Lutz

IPC: B81B7/00 ,  H01L23/34 ,  B81C1/00 ,  H01L23/498 ,  H01L23/31

CPC classification number: B81B7/0083 ,  B81B7/007 ,  B81B7/0077 ,  B81B2201/0271 ,  B81B2207/07 ,  B81B2207/094 ,  B81C1/0023 ,  B81C1/00301 ,  B81C1/00333 ,  B81C1/00341 ,  B81C2201/016 ,  B81C2203/0118 ,  B81C2203/0154 ,  H01L23/3107 ,  H01L23/34 ,  H01L23/498 ,  H01L2224/48091 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/01019 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: In a microelectromechanical system (MEMS) device, a CMOS die is affixed to a die-mounting surface and wire-bonded to electrically conductive leads, and a MEMS die is stacked on and electrically coupled to the CMOS die in a flip-chip configuration. A package enclosure envelopes the MEMS die, CMOS die and wire bonds, and exposes respective regions of the electrically conductive leads.

公开(公告)号：US20170101310A1

公开(公告)日：2017-04-13

申请号：US15242437

申请日：2016-08-19

Applicant: SiTime Corporation

Inventor： Aaron Partridge ,  Markus Lutz ,  Pavan Gupta

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00277 ,  B81B7/0035 ,  B81B7/0058 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/0171 ,  B81C2203/031 ,  B81C2203/036 ,  B81C2203/037 ,  B81C2203/038 ,  H01L23/051 ,  H01L41/1136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: After forming a microelectromechanical-system (MEMS) resonator within a silicon-on-insulator (SOI) wafer, a complementary metal oxide semiconductor (CMOS) cover wafer is bonded to the SOI wafer via one or more eutectic solder bonds that implement respective paths of electrical conductivity between the two wafers and hermetically seal the MEMS resonator within a chamber.

公开(公告)号：US09440845B2

公开(公告)日：2016-09-13

申请号：US14961760

申请日：2015-12-07

Applicant: SiTime Corporation

Inventor： Aaron Partridge ,  Markus Lutz ,  Pavan Gupta

IPC: H01L23/488 ,  H01L23/051 ,  B81B7/00 ,  B81C1/00 ,  H01L41/113

CPC classification number: B81C1/00277 ,  B81B7/0035 ,  B81B7/0058 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/0171 ,  B81C2203/031 ,  B81C2203/036 ,  B81C2203/037 ,  B81C2203/038 ,  H01L23/051 ,  H01L41/1136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

Abstract translation: 具有开口的半导体层和形成在开口中的MEMS谐振器设置在第一和第二基板之间以封装MEMS谐振器。 至少部分地在半导体层内并且至少部分地在第一衬底内形成从MEMS器件的开口延伸到外部的电接触。

公开(公告)号：US20240186947A1

公开(公告)日：2024-06-06

申请号：US18527212

申请日：2023-12-01

Applicant: SiTime Corporation

Inventor： Carl Martin Arft ,  Sassan Tabatabaei Zavareh ,  Aaron Partridge ,  Yushu Ma ,  Markus Rudolf Lutz ,  Li Ko Chiu

IPC: H03B5/04 ,  H03B5/30

CPC classification number: H03B5/04 ,  H03B5/30

Abstract: A microelectromechanical system (MEMS) device is provided with partitioning for thermal management. In one illustrative embodiment, the device may include: a heated section including a first die and a second die, wherein: the first die includes a heater, and the second die is coupled to the first die and includes a temperature sensor and a MEMS resonator; and a non-heated section communicatively coupled to the heated section and including a third die. The third die may receive a first signal associated with the temperature sensor and provides a second signal to the first die associated with the heater based on the first signal.

公开(公告)号：US11731869B1

公开(公告)日：2023-08-22

申请号：US17561850

申请日：2021-12-24

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Paul M. Hagelin ,  Michael Julian Daneman ,  Ginel C. Hill ,  Aaron Partridge

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0038 ,  B81C1/00285

Abstract: A MEMS element within a semiconductor device is enclosed within a cavity bounded at least in part by hydrogen-permeable material. A hydrogen barrier is formed within the semiconductor device to block propagation of hydrogen into the cavity via the hydrogen-permeable material.

公开(公告)号：US11718518B1

公开(公告)日：2023-08-08

申请号：US17016099

申请日：2020-09-09

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Paul M. Hagelin ,  Michael Julian Daneman ,  Ginel C. Hill ,  Aaron Partridge

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0038 ,  B81C1/00285

Abstract: A MEMS element within a semiconductor device is enclosed within a cavity bounded at least in part by hydrogen-permeable material. A hydrogen barrier is formed within the semiconductor device to block propagation of hydrogen into the cavity via the hydrogen-permeable material.

公开(公告)号：US11685650B2

公开(公告)日：2023-06-27

申请号：US16983141

申请日：2020-08-03

Applicant: SiTime Corporation

Inventor： Aaron Partridge ,  Markus Lutz ,  Pavan Gupta

IPC: H01L23/051 ,  B81C1/00 ,  H01L41/113 ,  B81B7/00

CPC classification number: B81C1/00277 ,  B81B7/007 ,  B81B7/0035 ,  B81B7/0058 ,  B81C1/00269 ,  B81C1/00301 ,  H01L23/051 ,  H01L41/1136 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C2201/0171 ,  B81C2203/031 ,  B81C2203/036 ,  B81C2203/037 ,  B81C2203/038 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

公开(公告)号：US11370656B2

公开(公告)日：2022-06-28

申请号：US17143119

申请日：2021-01-06

Applicant: SiTime Corporation

Inventor： Pavan Gupta ,  Aaron Partridge ,  Markus Lutz

IPC: B81B7/00 ,  B81C1/00 ,  H01L41/113 ,  H01L23/34 ,  H01L23/498 ,  H01L23/31

Abstract: A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure.