中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

47 records (took 0.031 seconds)

    Integrated circuit with an embedded inductor or transformer
    27.
    发明授权
    Integrated circuit with an embedded inductor or transformer 有权

    公开(公告)号：US11538771B2

    公开(公告)日：2022-12-27

    申请号：US16985052

    申请日：2020-08-04

    Applicant: Texas Instruments Incorporated

    Inventor： Barry Jon Male ,  Rajarshi Mukhopadhyay

    IPC: H01L23/64 ,  H01F17/00 ,  H01F27/24 ,  H01F27/28 ,  H01F41/04 ,  H01L23/495 ,  H01L23/522 ,  H01L23/66 ,  H01L49/02

    Abstract: In a described example, an integrated circuit includes: a semiconductor substrate having a first surface and an opposite second surface; at least one dielectric layer overlying the first surface of the semiconductor substrate; at least one inductor coil in the at least one dielectric layer with a plurality of coil windings separated by coil spaces, the at least one inductor coil lying in a plane oriented in a first direction parallel to the first surface of the semiconductor substrate, the at least one inductor coil electrically isolated from the semiconductor substrate by a portion of the at least one dielectric layer; and trenches extending into the semiconductor substrate in a second direction at an angle with respect to the first direction, the trenches underlying the inductor coil and filled with dielectric replacement material.

    Thermal and stress isolation for precision circuit
    28.
    发明授权
    Thermal and stress isolation for precision circuit 有权

    公开(公告)号：US10727161B2

    公开(公告)日：2020-07-28

    申请号：US16055395

    申请日：2018-08-06

    Applicant: Texas Instruments Incorporated

    Inventor： Peter Smeys ,  Ting-Ta Yen ,  Barry Jon Male ,  Paul Merle Emerson

    IPC: H01L23/433 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00

    Abstract: Described examples include microelectronic devices and integrated circuits with an active first circuit in a first segment of a first wafer, a second circuit in a second segment of the first wafer, and second and third wafers bonded to different surfaces of the first wafer to provide first and second cavities with surfaces spaced from the first segment. An opening extends through the first wafer between the first and second cavities to separate portions of the first and second segments and to form a sealed cavity that surrounds the first segment. A bridge segment of the first wafer supports the first segment in the sealed cavity and includes one or more conductive structures to electrically connect the first and second circuits.

    Vertical thermoelectric structures
    29.
    发明授权
    Vertical thermoelectric structures 有权

    公开(公告)号：US10446734B2

    公开(公告)日：2019-10-15

    申请号：US15162033

    申请日：2016-05-23

    Applicant: Texas Instruments Incorporated

    Inventor： Barry Jon Male ,  Philip L. Hower

    IPC: H01L35/30 ,  H01L23/38 ,  H01L35/32 ,  H01L27/16 ,  H01L35/22

    Abstract: A thermoelectric device is disclosed which includes metal thermal terminals protruding from a top surface of an IC, connected to vertical thermally conductive conduits made of interconnect elements of the IC. Lateral thermoelectric elements are connected to the vertical conduits at one end and heatsinked to the IC substrate at the other end. The lateral thermoelectric elements are thermally isolated by interconnect dielectric materials on the top side and field oxide on the bottom side. When operated in a generator mode, the metal thermal terminals are connected to a heat source and the IC substrate is connected to a heat sink. Thermal power flows through the vertical conduits to the lateral thermoelectric elements, which generate an electrical potential. The electrical potential may be applied to a component or circuit in the IC. The thermoelectric device may be integrated into an IC without adding fabrication cost or complexity.

Patent Agency Ranking