公开(公告)号：EP0567063A2

公开(公告)日：1993-10-27

申请号：EP93106374.7

申请日：1993-04-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Summerfelt, Scott R. ,  Beratan, Howard R.

IPC: H01L21/311 ,  H01L41/24 ,  H01L39/24 ,  C04B41/53

CPC classification number: G03F7/2041 ,  C04B41/5353 ,  C04B41/91 ,  H01L21/31111 ,  H01L28/55

Abstract: A metal oxide substrate (e.g. barium strontium titanate 34 ) is immersed in a liquid ambient (e.g. 12 molar concentration hydrochloric acid 30 ) and illuminated with radiation (e.g. collimated visible/ultraviolet radiation 24 ) produced by a radiation source (e.g. a 200 Watt mercury xenon arc lamp 20 ). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the metal oxide substrate 34 . An etch mask 32 may be positioned between the radiation source 20 and the substrate 34 . The metal oxide substrate 34 and liquid ambient 30 are maintained at a nominal temperature (e.g. 25 °C). Without illumination, the metal oxide is not appreciably etched by the liquid ambient. Upon illumination the etch rate is substantially increased.

Abstract translation: 将金属氧化物基底（例如钛酸钡锶34）浸入液体环境（例如12摩尔浓度的盐酸30）中，并用辐射源（例如200瓦汞柱）产生的辐射（例如准直的可见/紫外线辐射24）照射 氙弧灯20）。 对准直辐射24基本透明的窗口26允许辐射能量到达金属氧化物衬底34.蚀刻掩模32可以位于辐射源20和衬底34之间。金属氧化物衬底34和液体环境30 保持在标称温度（例如25℃）。 没有照明，金属氧化物不被液体环境明显腐蚀。 在照射时，蚀刻速率显着增加。

公开(公告)号：EP0525721A1

公开(公告)日：1993-02-03

申请号：EP92112858.3

申请日：1992-07-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A.

IPC: G03F7/36 ,  G03F7/38

CPC classification number: G03F7/38 ,  G03F7/36

Abstract: This is a method for forming patterned features. The method comprises: forming a single layer of resist 12 on a substrate 10, the layer 12 having a thickness; patterning the resist by selective exposure to a first energy source 16 to modify the developing properties of portions of the resist, leaving an amount of the thickness unexposed; and developing the resist. This is also a device which comprises: a substrate; a layer of resist over the substrate; and an energy absorbing dye in the resist. Other methods and structures are also disclosed.

Abstract translation: 这是形成图案特征的方法。 该方法包括：在衬底10上形成单层抗蚀剂12，层12具有厚度; 通过选择性地暴露于第一能量源16来图案化抗蚀剂，以改变抗蚀剂部分的显影性能，留下一定量的未曝光; 并开发抗蚀剂。 这也是一种装置，其包括：基板; 衬底上的抗蚀剂层; 和抗蚀剂中的能量吸收染料。 还公开了其它方法和结构。

公开(公告)号：EP0516142A2

公开(公告)日：1992-12-02

申请号：EP92109086.6

申请日：1992-05-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A.

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/31654

Abstract: Generally, and in one form of the invention, a method is presented for the photo-stimulated etching of a CaF₂ surface 12, comprising the steps of exposing the CaF₂ surface 12 to an ambient species 16, exciting the CaF₂ surface 12 and/or the ambient species 16 by photo-stimulation sufficiently to allow reaction of the CaF₂ surface 12 with the ambient species 16 to form CaF₂/ambient species products, and removing the ambient species 16 and the CaF₂/ambient species products from the CaF₂ surface 12.
Other devices, systems and methods are also disclosed.

Abstract translation: 通常，在本发明的一种形式中，提出了用于CaF2表面12的光刺激蚀刻的方法，包括以下步骤：将CaF 2表面12暴露于环境物质16，激发CaF 2表面12和/或 环境物质16通过光刺激足以允许CaF 2表面12与环境物质16反应以形成CaF 2 /环境物质产物，并从CaF 2表面12去除环境物质16和CaF 2 /环境物质产物。其它装置 ，还公开了系统和方法。

公开(公告)号：EP0433983A2

公开(公告)日：1991-06-26

申请号：EP90124588.6

申请日：1990-12-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A.

IPC: H05K3/06 ,  H05K3/02 ,  H01L21/321

CPC classification number: H01L21/32136 ,  C23F4/02 ,  H05K3/067

Abstract: An etch process for etching copper layers that is useable in integrated circuit fabrication is disclosed which utilizes halides to react with copper, preferrably using photoenergizing and photodirecting assistance of high intensity ultraviolet light, to produce a product which is either volatile or easily removed in solution. The process is anisotropic.

Abstract translation: 公开了一种用于蚀刻在集成电路制造中可用的铜层的蚀刻工艺，其利用卤化物与铜反应，优选地使用光强度和高强度紫外光的光电导引辅助，以产生挥发性或在溶液中容易除去的产物。 该过程是各向异性的。

公开(公告)号：EP0829312A3

公开(公告)日：1999-09-15

申请号：EP97305628.6

申请日：1997-07-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Templeton, Allen C.

IPC: B08B3/08 ,  H01L21/306

CPC classification number: H01L21/02052 ,  B08B3/08 ,  B08B7/0021 ,  C11D7/50 ,  C11D11/0047 ,  Y10S134/902 ,  Y10S438/902

Abstract: An embodiment of the instant invention is a method of removing inorganic contamination from substantially the surface of a semiconductor substrate, the method comprising the steps of: reacting the inorganic contamination with at least one conversion agent, thereby converting the inorganic contamination; removing the converted inorganic contamination by subjecting it to at least one solvent agent, the solvent agent is included in a first supercritical fluid (preferably supercritical CO 2 ); and wherein the converted inorganic contamination is more highly soluble in the solvent agent than the inorganic contamination.

Abstract translation: 本发明的一个实施方案是从基本上半导体衬底的表面去除无机污染物的方法，该方法包括以下步骤：使无机污染物与至少一种转化剂反应，从而转化无机污染物; 通过使其转化为至少一种溶剂来除去转化的无机污染物，溶剂包括在第一超临界流体（优选超临界CO 2）中; 并且其中转化的无机污染物比无机污染物更溶于溶剂。

公开(公告)号：EP0567063B1

公开(公告)日：1998-03-04

申请号：EP93106374.7

申请日：1993-04-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Summerfelt, Scott R. ,  Beratan, Howard R.

IPC: H01L21/311 ,  H01L41/24 ,  H01L39/24 ,  C04B41/53

CPC classification number: G03F7/2041 ,  C04B41/5353 ,  C04B41/91 ,  H01L21/31111 ,  H01L28/55

公开(公告)号：EP0822583A2

公开(公告)日：1998-02-04

申请号：EP97305822.5

申请日：1997-08-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Templeton, Allen C.

IPC: H01L21/306 ,  B08B3/10

CPC classification number: H01L21/02046 ,  B08B3/08 ,  B08B7/0021 ,  C11D7/50 ,  C11D11/0023 ,  Y10S134/902 ,  Y10S438/902

Abstract: An embodiment of the instant invention is a method of removing inorganic contamination (contamination 104 of FIGUREs 2a-2b) from a layer (layer 102) overlying a substrate (substrate 100), the method comprising the steps of: removing the layer overlying the substrate with at least one removal agent; reacting the inorganic contamination with at least one conversion agent, thereby converting the inorganic contamination; removing the converted inorganic contamination by subjecting it to at least one solvent agent, the solvent agent included in a first supercritical fluid; and wherein the converted inorganic contamination is more highly soluble in the solvent agent than the inorganic contamination.

Abstract translation: 基板的本发明的实施方式是从上覆（衬底100）的层（层102）除去无机污染（图2a-2b的污染104）的方法，该方法包括以下步骤：移除所述层覆盖衬底 与至少一种去除剂; 反应的无机污染与至少一种转换剂中，从而将无机污染; 通过对其进行至少一种溶剂剂去除所述转换后的无机污染，包括在第一超临界流体溶剂剂; 和worin转换后的无机污染在比无机污染溶剂剂更高度可溶。

公开(公告)号：EP0702400A2

公开(公告)日：1996-03-20

申请号：EP95118166.8

申请日：1993-05-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A.

IPC: H01L21/306 ,  B08B3/10

CPC classification number: H01L21/02052 ,  B08B3/10 ,  B08B7/0057 ,  C23F4/00 ,  H01L21/67057

Abstract: A method is presented for the electrically assisted removal of metal contamination (16) from a surface (11) of a semiconductor. The method comprises the steps of covering said surface (11) of said semiconductor with a liquid ambient (14), applying a bias to a further surface of said semiconductor opposite to said first mentioned surface to create a layer of charge on said first mentioned surface to allow reaction of said metal contamination (11) with said liquid ambient (14) to form metal products, and removing said liquid ambient (14) and said metal products from said first mentioned surface.

Abstract translation: 提出了一种用于从半导体的表面（11）电辅助去除金属污染物（16）的方法。 该方法包括以下步骤：用液体环境（14）覆盖所述半导体的所述表面（11），向所述半导体的与所述第一所述表面相对的另一表面施加偏压以在所述第一所述表面上产生电荷层 以允许所述金属污染物（11）与所述液体环境（14）反应以形成金属产品，并且从所述第一次提及的表面移除所述液态环境（14）和所述金属产品。

公开(公告)号：EP0595053A2

公开(公告)日：1994-05-04

申请号：EP93115796.0

申请日：1993-09-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A.

IPC: H01L21/321 ,  C23F1/02 ,  C23F1/18 ,  C23F4/00 ,  H05K3/06

CPC classification number: C23F1/02 ,  H01L21/30655 ,  H01L21/32134

Abstract: An anisotropic liquid phase photochemical etch is performed by a substrate 30 (e.g. copper) in a liquid 34 containing all etchant (e.g. hydrochloric acid) and a passivant (e.g. iodine), the passivant forming an insoluble passivation layer 36 (e.g. CuI) on the surface, preventing the etchant from etching the surface. The passivant and its concentration are chosen such that the passivation layer 36 has a solubility which is substantially increased when it is illuminated with radiation 38 (e.g. visible/ultraviolet light). Portions of the surface are then illuminated with radiation 88, whereby the passivation layer 36 is removed from these illuminated portions of the surface, allowing the etch to proceed there. Portions of the surface not illuminated are not etched, resulting in an anisotropic etch. Preferably, an etch mask 32 is used to create the inilluminated areas. This etch mask 32 may be formed on the surface or it may be interposed between the surface and the radiation source.

Abstract translation: 通过在包含所有蚀刻剂（例如盐酸）和钝化剂（例如碘）的液体34中的衬底30（例如铜）进行各向异性液相光化学蚀刻，钝化剂在其上形成不溶性钝化层36（例如CuI） 表面，防止蚀刻剂蚀刻表面。 选择钝化剂及其浓度，使得钝化层36具有当用辐射38（例如可见/紫外光）照射时基本上增加的溶解度。 然后用辐射88照射表面的部分，由此钝化层36从表面的这些照射部分移除，允许蚀刻在那里进行。 未被照射的表面的部分不被蚀刻，导致各向异性蚀刻。 优选地，使用蚀刻掩模32来产生未被照射的区域。 该蚀刻掩模32可以形成在表面上，或者它可以插入在表面和辐射源之间。

公开(公告)号：EP0571950A3

公开(公告)日：1993-12-15

申请号：EP93108425.5

申请日：1993-05-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A.

IPC: H01L21/306

CPC classification number: H01L21/02052 ,  B08B3/10 ,  B08B7/0057 ,  C23F4/00 ,  H01L21/67057

Abstract: Generally, and in one form of the invention, a method is presented for the photo-stimulated removal of reacted metal contamination 16 from a surface 11, comprising the steps of: covering the surface with a liquid ambient 14; exciting the reacted metal contamination 16 and/or the liquid ambient 14 by photo-stimulation sufficiently to allow reaction of the reacted metal contaminantion 16 with the liquid ambient 14 to form metal products; and removing the liquid ambient 14 and the metal products from the surface 11. Other methods are also disclosed.

Abstract translation: 通常，在本发明的一种形式中，提出了一种从表面11光激发除去反应的金属污染物16的方法，包括以下步骤：用液体环境14覆盖表面; 通过足够的光刺激激发反应的金属污染物16和/或液体环境14，以使反应的金属污染物16与液体环境14反应形成金属产物; 并且从表面11除去液体环境14和金属产品。还公开了其它方法。