公开(公告)号：JPH10229124A

公开(公告)日：1998-08-25

申请号：JP3364997

申请日：1997-02-18

Applicant: TOSHIBA CORP

Inventor： INOUE SOICHI ,  KANEKO HISAFUMI ,  HASUNUMA MASAHIKO ,  USUI TAKAKIMI ,  AOKI MASAMI ,  YAMAMOTO KAZUKO ,  MIYAMA SACHIKO

IPC: G03F9/00 ,  G03F1/36 ,  G03F1/68 ,  G03F7/00 ,  G03F7/20 ,  H01L21/027 ,  H01L21/768 ,  H01L21/82 ,  H01L21/822 ,  H01L27/04

Abstract: PROBLEM TO BE SOLVED: To reduce displacement between transferred patterns, even when the patterns are not transferred faithfully due to a proximity effect of light. SOLUTION: A method of manufacturing semiconductor device includes at least a process for forming a first transfer pattern 23, corresponding to a first mask pattern 21 by radiating electromagnetic waves or charged particles through a first mask plate carrying the mask pattern 21 and another process for forming the second transfer pattern 24, corresponding to a second mask pattern 22 by radiating electromagnetic waves or charged particles through a second mask plate, carrying the second mask pattern 22. The position of the second mask pattern 22 is corrected, in advance, in a certain stage between the designing process of the semiconductor device and the second mask pattern 22 forming process correspondingly to the transfer error of the first transfer pattern 23 to the first mask pattern 21.

公开(公告)号：JPH1022206A

公开(公告)日：1998-01-23

申请号：JP17643596

申请日：1996-07-05

Applicant: TOSHIBA CORP

Inventor： AOKI MASAMI ,  INOUE SOICHI

IPC: G03F7/004 ,  G03F7/11 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To form the highest-density pattern without misalignment by forming a resist on a substructure having a light emitting layer, emitting an electromagnetic wave thereto, and sensitizing the resist through a luminescent light generating from the light emitting layer. SOLUTION: An insulation layer 12 and a wiring layer 13 are formed on a base substrate 11, and a light emitting layer 14 containing a phosphor is formed on the wiring layer 13 at the same pattern as the wiring layer 13. Then an interlayer insulation layer 15 is formed of a material having a high transmittance against an emitted light A and a luminescent light B, on the light emitting layer 14, and a positive resist 16 which is sensitized only by the light B is formed thereon. The light A is allowed to arrive at the layer 14 through the resist 16 and layer 15, and the light B whose wavelength is longer than that of the light A is excited and radiated from the layer 14, so that only the resist just beneath the layer 14 is sensitized selectively and it is developed so as to remove a resist in an area which is sensitized by the light B. Thus a resist pattern can be formed in a self-aligning manner against the layer 14.

公开(公告)号：JPH09258428A

公开(公告)日：1997-10-03

申请号：JP6146196

申请日：1996-03-18

Applicant: TOSHIBA CORP

Inventor： ARAKI AKIKO ,  INOUE SOICHI ,  SANHONGI SHOJI

IPC: G03F1/68 ,  G03F1/70 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To enable to design a mask for exposure effective for formation of a transfer pattern of an as-desired area and exposure conditions by updating a design pattern and exposure conditions until an evaluation parameter and threshold value satisfy prescribed conditions. SOLUTION: The difference between the areas S1 and S2 of the desired pattern 1 and the transfer pattern 12 is defined as the evaluation parameter Δ. The exposure plane of a photosensitive film is selected as a two-dimensional plane and the two-dimensional coordinates defining an arbitrary point on this plane is defined as (x, y), the function indicating the presence or absence of the photosensitive film corresponding to the transfer pattern on the two-dimensional plane for the given design pattern and exposure conditions as f (x, y), the function indicating the presence or absence of the photosensitive film corresponding to the desired transfer pattern on the two-dimensional plane as g(x, y) and an arbitrary region of the exposure plane of the photosensitive film as D. The design pattern and exposure conditions are then updated until the evaluation parameter Δ defined by Δ=∫Df(x, y)dxdy-∫∫Dg(x, y)dxdy and the threshold value satisfy the prescribed relation.

公开(公告)号：JPH08136236A

公开(公告)日：1996-05-31

申请号：JP27353494

申请日：1994-11-08

Applicant: TOSHIBA CORP

Inventor： SANHONGI SHOJI ,  INOUE SOICHI

IPC: G01B11/24 ,  G03F7/26 ,  G06F17/50 ,  G06F19/00 ,  G06T11/20 ,  H01L21/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G06F17/00

Abstract: PURPOSE: To provide a method for simulating shape by which the two- and three-dimensional shapes of a resist after development can be calculated with accuracy in a short time. CONSTITUTION: In a method for simulating shape by which the developed surface shape of a resist which is formed on a substrate and exposed in a desired pattern is predicted, a plurality of points on the surface of the undeveloped resist is used as starting points and the points are moved in the vertical direction 12 which is perpendicular to the surface of the substrate from the surface of the resist. The moving directions of the points are switched from the vertical direction 12 to horizontal directions 13 and 14 which are parallel to the surface of the substrate at every point in the direction 12 and the moving loci of the points in both the vertical and horizontal directions are found as the routes of the points. Then the developed shape of the resist is obtained by calculating the envelopes of all routes.

公开(公告)号：JPH07263315A

公开(公告)日：1995-10-13

申请号：JP5429794

申请日：1994-03-25

Applicant: TOSHIBA CORP

Inventor： TANAKA SATOSHI ,  INOUE SOICHI ,  FUJISAWA TADAHITO

IPC: G03F7/20 ,  H01L21/027 ,  G03B27/32

Abstract: PURPOSE:To always obtain the optimum oblique-incident lighting position and polarizing direction by controlling the refractive index, transmittance, and polarization of a filter so that the angle and direction of polarization of diffracted light can become equivalent to the optimum oblique-incident lighting position in accordance with the periodic direction and pitch of a mask pattern. CONSTITUTION:A reticle 5 is formed on a transparent substrate and composed of a light shielding section 10 which is made of such a light shielding material as chromium, etc., and does not transmit exposing light and an opening 11 which transmits the exposing light. The refractive index of a filter 9 electrically or optically changes in a cycle of 2D. The angle theta of diffraction of primary diffracted light can be decided from 2Dsintheta=lambda when the variation DELTAn of the refractive index and film thickness (t) of the filter 9 are adjusted. When a mask is irradiated with the diffracted light, two-flux interference is obtained on a wafer.

公开(公告)号：JPH06347997A

公开(公告)日：1994-12-22

申请号：JP27449193

申请日：1993-11-02

Applicant: TOSHIBA CORP

Inventor： NAKAMURA HIROKO ,  KOMANO HARUKI ,  KARIYA MITSUYO ,  INOUE SOICHI ,  SUGIHARA KAZUYOSHI ,  MORI ICHIRO ,  HORIOKA KEIJI ,  MIYOSHI MOTOSUKE ,  WATANABE TORU ,  OKANO HARUO ,  OKUMURA KATSUYA ,  TAKIGAWA TADAHIRO ,  YAMAZAKI YUICHIRO

IPC: B23K15/00 ,  G03F1/29 ,  G03F1/30 ,  G03F1/72 ,  G03F1/74 ,  H01J37/305 ,  H01L21/027 ,  H01L21/30 ,  G03F1/08

Abstract: PURPOSE:To provide the method for correcting a structural body by flatly correcting either of a projecting defect or recessed defect flush with a substrate surface. CONSTITUTION:This method for correcting the defect of the structural body which corrects the projecting defect 102 generated in the structural body formed with desired patterns on a substrate 101 includes a stage for forming a first thin film 104 consisting of a material different from the substrate 101 on the substrate 101 around the projecting defect 102 or so as to be approximate to the projecting defect 102, a stage for forming a second thin film 105 on the projecting defect 102 and the first thin film 104 and flattening the front surface thereof, a stage for simultaneously removing the projecting defect 102 and the respective thin films in the upper part thereof and the peripheries thereof by using charged particle ray and a stage for removing the respective thin films remaining in this removing stage.

公开(公告)号：JPH0684761A

公开(公告)日：1994-03-25

申请号：JP25355792

申请日：1992-08-31

Applicant: TOSHIBA CORP

Inventor： SHIBATA TAKESHI ,  INOUE SOICHI

IPC: G03F7/20 ,  H01L21/027

Abstract: PURPOSE:To simultaneously realize high resolution and the design of a complicated optical system or a large numerical aperture of a lens by making the wavelength of exposing light at the point of time when the exposing light is made incident to a resist film shorter than that when the exposing light irradiates a mask pattern. CONSTITUTION:Exposing light 2 (wavelength: lambda1) emitted from a light source 1 is made uniform through a fly-eye lens 3 and irradiates a mask 5 through a condenser lens 4. The light 2 transmitted through the mask 5 forms an image on a resist film 10 on a wafer 9 through a projection lens 8 after passing through a diaphragm 7 positioned to the location of a pupil and wavelength conversion filter 6 composed of a nonlinear optical material. At this time, the wavelength (lambda2) of the light 2 after passing through the filter 6 is shortened as compared with that (lambda1) before passing through the filter 6. Therefore, the exposing light 2 which actually forms the image on the film 10 through the lens 8 has the wavelength 2. Consequently, the difficulty encountered during the course of manufacturing an exposing device due to the shortening of wavelength of the exposing light can be reduced.

公开(公告)号：JPH05326370A

公开(公告)日：1993-12-10

申请号：JP18667392

申请日：1992-07-14

Applicant: TOSHIBA CORP

Inventor： INOUE SOICHI ,  FUJISAWA TADAHITO ,  SATO TAKASHI ,  TAMAMUSHI SHUICHI ,  HORIOKA KEIJI

IPC: H01L21/30 ,  G03F7/20 ,  H01L21/027

Abstract: PURPOSE:To sufficiently increase the depth of focus of the title aligner even when the size of an L/S pattern is large and to enhance the exposure accuracy of the title aligner. CONSTITUTION:In a projection aligner, a pattern on a mask is projected and exposed onto a wafer via a projection optical system. In the projection aligner, a special disphragm 9' (a four port filter) by means of which the distribution of the intensity inside a radiation face of a light source is symmeteric, four times, with respect to an optical axis and which makes the intensity large in four regions outside the optical axis is installed as a secondary light source with which the mask R is irradiated, and a pattern by using a semitransparent film is formed on a lighttransmitting substrate. Then, the following halftone mask is used: the phase difference between light transmitted through the semitransparent film and light transmitted through the light-transmitting substrate satisfies the relationship of 180X(2n+1)+ or -30 deg. [where (n) is an integer]; and the amplitude transmission factor of the semitransparent film satisfies the relationship of 0.01XT0

公开(公告)号：JPH05158219A

公开(公告)日：1993-06-25

申请号：JP32573791

申请日：1991-12-10

Applicant: TOSHIBA CORP

Inventor： INOUE SOICHI

IPC: G03F1/30 ,  G03F1/32 ,  G03F1/68 ,  H01L21/027

Abstract: PURPOSE:To provide a photomask capable of having the resolution of each pattern in a desired dimension, even when a normal arrangement pattern and an abnormal arrangement pattern are mixed. CONSTITUTION:In a photomask for manufacturing a semiconductor 1, having the mixture of a normal arrangement part 2 having a transparent region pattern on a part of an opaque region, and provided with a phase shifter for inverting the phase of transmitted light, on one of a pair of adjacent patterns, and an abnormal arrangement part 3 except the part 2, a translucent layer 14 for attenuating the quantity of the transmitted light of the pattern of the normal arrangement part 2, is provided.

公开(公告)号：JPH0293403A

公开(公告)日：1990-04-04

申请号：JP24382488

申请日：1988-09-30

Applicant: TOSHIBA CORP

Inventor： INOUE SOICHI ,  HORIOKA KEIJI

IPC: G02B5/18

Abstract: PURPOSE:To obtain the zone plate which is high in accuracy by alternately laminating material s of the large coefft. of absorption to the wavelengths to be used at the time of imaging and the materials of the small coefft. of absorption to a cylindrical inside wall surface. CONSTITUTION:An Si substrate 201 is provided on a lower SiO2 layer 203 and after a resist 204 is applied thereon, the resist is exposed to a circular shape by photoexposing and is then developed. A circular hole is bored to the substrate 201 by RIE anisotropic etching of an SiO2 layer 202 and the resist 204 is peeled. A circular hole of the diameter larger than the diameter of the circular hole of the SiO2 202 is provided by anisotropic etching of the substrate 201; thereafter, selective CVD of W is executed by a gaseous mixture composed of WF6 and H2 to deposit 205 only the W on the substrate 201. Further, Si 206 is deposited by selective CVD of Si only on the deposited layer 205 by using a gaseous mixture composed of SiH2CL2 and H2. The central part of the zone plate is embedded with the projecting part 207 of the Si by repeating the above-mentioned stage. The layer 202 is then etched by NH4F and a resist 208 is applied on the surface; thereafter, the resist 208 and the layer 207 are etched by a mixture composed of CF4 and O2. The layer 203 is then etched away by a liquid mixture composed of hydrofluoric acid and acetic acid.