公开(公告)号：JP2007273560A

公开(公告)日：2007-10-18

申请号：JP2006094847

申请日：2006-03-30

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： TANAKA SATOSHI ,  SANHONGI SHOJI ,  SATO TAKASHI ,  INOUE SOICHI

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G06F17/5009

Abstract: PROBLEM TO BE SOLVED: To provide a light intensity distribution simulation method easily reflecting the effect of the thickness of a pattern film of a photomask on a calculation result. SOLUTION: The light intensity distribution simulation method includes a step of extracting a plurality of point light sources (SX, SY); a step of causing light ψ emitted from each of the point light sources (SX, SY) to fall to a pattern film 100 having openings 101a, 101b, and 101c; a step of calculating effective shapes of the openings 101a, 101b, and 101c by subtractors, on which the light ψ is not directly incident due to the side wall of the pattern film 100 from the designed shapes of the openings 101a, 101b, and 101c; and a step of calculating the light intensity distribution of diffracted light that is generated by the light ψ at the openings 101a, 101b, and 101c and is weakened due to an area difference between the designed shape and the effective shape. Calculation is made on the assumption that the pattern film 100 has no thickness. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决的问题：为了提供容易地反映光掩模图案膜的厚度对计算结果的影响的光强度分布模拟方法。 光强分布模拟方法包括提取多个点光源（SX，SY）的步骤; 使从每个点光源（SX，SY）发射的光ψ落到具有开口101a，101b和101c的图案膜100上的步骤; 通过减法器计算开口101a，101b和101c的有效形状的步骤，其中光ψ由于开口101a，101b和101c的设计形状而不由于图案膜100的侧壁而直接入射 ; 以及计算由开口101a，101b和101c处的光ψ产生的衍射光的光强度分布的步骤，并且由于设计形状和有效形状之间的面积差而变弱。 假设图案膜100没有厚度进行计算。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006210856A

公开(公告)日：2006-08-10

申请号：JP2005024553

申请日：2005-01-31

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： KIYOU SUIGEN ,  INOUE SOICHI

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To suppress microscopic deviation of distribution of light quantity, in bridging exposure using a filter. SOLUTION: An exposure device comprising a filter which includes a transmitting region almost uniform in the quantity of transmitting light and shielding regions so formed as to sandwich the transmitting region, an original plate for bridging exposure, a stage on which a substrate is mounted, and light quantity varying means for varying the light quantity on the substrate by a specified width, is prepared. When an optical positional relationship between the original plate and the substrate is a first condition, and a pattern formed in a first original plate region is transferred to a first substrate region. A pattern formed in a second original plate region under the first condition is transferred to a second substrate region. When the optical positional relationship between the original plate and the substrate is a second condition, a pattern formed in a third original plate region is transferred to a third substrate region overlapping with the first substrate region by the specified width. A pattern formed in a fourth original plate region under the second condition is transferred to a fourth substrate region overlapping with the second substrate region by the specified width. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：在使用过滤器的桥接曝光中，抑制光量分布的微观偏差。 解决方案：一种曝光装置，包括滤光器，该滤光器包括透射光量几乎均匀的透射区域和形成为夹着透射区域的屏蔽区域，用于桥接曝光的原版板，基板上的基板 并且准备用于将基板上的光量改变指定宽度的光量变化装置。 当原版和基板之间的光学位置关系是第一条件时，在第一原版区域中形成的图案被转印到第一基板区域。 在第一条件下在第二原版区域中形成的图案被转印到第二基板区域。 当原版和基板之间的光学位置关系为第二条件时，形成在第三原版区域中的图案被转印到与第一基板区域重叠指定宽度的第三基板区域。 在第二条件下形成在第四原版区域中的图案被转移到与第二基板区域重叠指定宽度的第四基板区域。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005338650A

公开(公告)日：2005-12-08

申请号：JP2004160127

申请日：2004-05-28

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： NOJIMA SHIGEKI ,  TANAKA SATOSHI ,  KOTANI TOSHIYA ,  DEWA KYOKO ,  INOUE SOICHI

IPC: G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G03F7/20 ,  G06F17/50 ,  G21K5/10 ,  H01L21/027 ,  G03F1/08

CPC classification number: G03F1/36

Abstract: PROBLEM TO BE SOLVED: To provide a data generation method for a pattern by which a specified pattern can be formed even when various fluctuations are present in the process. SOLUTION: The method includes steps of: preparing an integrated circuit design pattern including a design pattern; setting the range of allowable fluctuation in a first pattern formed on a substrate by transferring the design pattern and in a second pattern formed by processing the substrate by using the first pattern as a mask; generating a target pattern within the determined allowable fluctuation range; and correcting the target pattern under specified conditions considering influences of transferring and/or forming the design pattern on the substrate to generate a first corrected pattern. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供即使在该过程中存在各种波动的情况下也可以形成指定图案的图案的数据生成方法。 解决方案：该方法包括以下步骤：制备包括设计图案的集成电路设计图案; 通过转印设计图案和通过使用第一图案作为掩模将基板加工形成的第二图案设置在形成在基板上的第一图案中的允许波动的范围; 在确定的容许波动范围内产生目标图案; 并且考虑在衬底上转移和/或形成设计图案以产生第一校正图案的影响的规定条件下校正目标图案。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005284272A

公开(公告)日：2005-10-13

申请号：JP2005057805

申请日：2005-03-02

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： KOTANI TOSHIYA ,  TANAKA SATOSHI ,  NOJIMA SHIGEKI ,  HASHIMOTO KOJI ,  INOUE SOICHI

IPC: G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G03F7/20 ,  G06F17/50 ,  H01L21/027 ,  H01L21/336 ,  H01L21/82 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To improve correction efficiency for correcting deviation in a pattern dimension and to reduce the process time for correcting a mask pattern. SOLUTION: The method for correcting a pattern for correcting a design pattern so as to form a desired pattern on a wafer includes steps of: specifying a allowable dimensional deviation in each design pattern; specifying conditions for pattern correction for each design pattern based on the above allowable dimensional deviation specified to each pattern; and correcting each design pattern based on the conditions for pattern correction specified for each design pattern. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提高用于校正图案尺寸的偏差的校正效率并且减少用于校正掩模图案的处理时间。 解决方案：用于校正用于校正设计图案以在晶片上形成期望图案的图案的方法包括以下步骤：指定每种设计图案中的允许尺寸偏差; 基于针对每个图案指定的上述允许尺寸偏差来指定每个设计图案的图案校正条件; 并且基于针对每个设计图案指定的图案校正的条件来校正每个设计图案。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004117728A

公开(公告)日：2004-04-15

申请号：JP2002279742

申请日：2002-09-25

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： DEWA KYOKO ,  KANAI HIDEKI ,  INOUE SOICHI ,  KANEMITSU SHINGO ,  ITO SHINICHI

IPC: G03F1/26 ,  G03F1/38 ,  G03F7/20 ,  G03F9/00 ,  G03F9/02 ,  H01L21/027 ,  G03F1/08

CPC classification number: G03F1/30 ,  G03F1/32 ,  G03F7/70641 ,  G03F7/70683

Abstract: PROBLEM TO BE SOLVED: To provide a mask and a manufacturing method of the same for suppressing increase of manufacturing processes, etc. SOLUTION: The mask comprises a first area 10 including a first peripheral part at which a halftone film 102 or a laminated film of the halftone film 102 and a light shield film 103 is formed on a translucent substrate 101 and a first opening part surrounded by the first peripheral part; and a second area 20 including a second peripheral part at which the halftone film 102 is formed on the translucent substrate 101 and a second opening part surrounded by the second peripheral part, and is configured to form a translucent film 106 on at least a portion of the second opening part and generate a prescribed phase difference between an exposure light passing through an area corresponding to a portion at which a translucent film of the second opening part and an exposure light passing through the second peripheral part. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004108820A

公开(公告)日：2004-04-08

申请号：JP2002268659

申请日：2002-09-13

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： YAMAGUCHI SHINJI ,  INOUE SOICHI ,  INOUE MARI

IPC: G01N21/956 ,  G03F1/68 ,  G03F1/70 ,  H01L21/027 ,  H01L21/66 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To achieve a practical yield prediction method of photomasks by using a critical area analysis.
SOLUTION: Defect inspection information used for inspecting defects on photomasks is reflected on design data in mask patterns and a critical area is calculated to the design data (step S1). A defect density distribution to the number of defects per unit area on the photomasks to the size of defects on the photomasks is estimated (step S2). The critical area and the defect density distribution are estimated and the number of killer defects on the photomasks is acquired (steps S3, S4). The yield of the photomasks is predicted based on the number of killer defects (step S5).
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004039860A

公开(公告)日：2004-02-05

申请号：JP2002194927

申请日：2002-07-03

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： FUJISAWA TADAHITO ,  INOUE SOICHI ,  SATO TAKASHI ,  ASANO MASASHI

IPC: H01L21/027 ,  G03F7/20 ,  G03F7/207

CPC classification number: G03F7/70558

Abstract: PROBLEM TO BE SOLVED: To easily achieve a required exposure sensitivity level by relaxing light exposure monitoring pattern design conditions.
SOLUTION: In this exposure monitoring method, illuminating light is projected upon a mask with an exposure monitoring pattern formed thereon, only zero-order diffracted light out of the diffracted light in the exposure monitoring pattern is made to pass in the pupil plane 200 of the projection aligner, and the exposure monitoring pattern is transferred to a substrate. During the projection of illuminating light, the centroid of a zero-order optical figure 211 after passing the exposure monitoring pattern on the pupil plane 200 of the projection aligner is deviated from an optical axis OA.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2002318448A

公开(公告)日：2002-10-31

申请号：JP2001124683

申请日：2001-04-23

Applicant: TOSHIBA CORP

Inventor： HASHIMOTO KOJI ,  INOUE SOICHI ,  TANAKA SATOSHI ,  USUI SATOSHI

IPC: G03F1/36 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a pattern correcting method for a mask for exposure, by which a new OPC(operations planning and control) rule or the like can be created in a short time in case of any change in a unit process after an OPC rule or the like is determined. SOLUTION: In the case of any change in part of a plurality of unit processes (e.g. mass processes) constituting a unit process group, an OPC rule/model is newly set on the basis of proximity effect data before and after the change on the unit process subjected to the change and proximity effect correction of the pattern of a mask for exposure is carried out.

公开(公告)号：JP2002303968A

公开(公告)日：2002-10-18

申请号：JP2001110309

申请日：2001-04-09

Applicant: TOSHIBA CORP ,  DAINIPPON PRINTING CO LTD

Inventor： KIYOU SUIGEN ,  INOUE SOICHI

IPC: G03F1/68 ,  G03F1/70 ,  G03F1/76 ,  G03F7/20 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a method of making original plates which is capable of reducing the manufacturing cost of a reticle manufactured by plural times of exposure stages. SOLUTION: The patterns of the reticle 2 are divided to dicing regions where the repetitive characteristic is low and regions of function elements A where the repetitive characteristic is high. The patterns of the dicing regions 4 are drawn to the original plates for the dicing regions and the patterns of the function elements A are drawn to the original plates 1-1 to 1-4 for the function elements A. The original plates 1-1 to 1-4 are respectively commonly used in plural times of exposure.

公开(公告)号：JP2002289503A

公开(公告)日：2002-10-04

申请号：JP2001090774

申请日：2001-03-27

Applicant: TOSHIBA CORP

Inventor： SUTANI TAKUJI ,  FUJISAWA TADAHITO ,  INOUE SOICHI

IPC: G01B11/00 ,  G01B15/00 ,  G03F1/44 ,  G03F7/20 ,  G03F7/207 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To measure a focus by a projection optical system with high sensitivity and superior precision without using a special mask for focus monitoring. SOLUTION: In a focus monitor method, a focus monitoring pattern on a mask illuminated by electron beams is transferred on an exposing substrate by a projection optical system, and the pattern on the substrate is measured, thereby monitoring a practical focus. The focus monitoring pattern is constituted by two types of pattern groups A, B and the pattern group A is illuminated with illumination beams in a state of a center of the gravity of an illumination light source being misaligned, and the pattern group B is illuminated with the illumination beams in a normal illumination state that a center of the gravity of the illumination light source exists on an axis. A position of the pattern group A relative to the pattern group B transferred onto the substrate is measured to monitor a focus.