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公开(公告)号:US12217164B2
公开(公告)日:2025-02-04
申请号:US16964435
申请日:2018-02-24
Applicant: Tsinghua University
Inventor: Xinyi Li , Huaqiang Wu , He Qian , Bin Gao , Sen Song , Qingtian Zhang
Abstract: A neural network and its information processing method, information processing system. The neural network includes N layers of neuron layers connected to each other one by one, except for a first layer of neuron layer, each of the neurons of the other neuron layers includes m dendritic units and one hippocampal unit; the dendritic unit includes a resistance value graded device, the hippocampal unit includes a resistance value mutation device, and the m dendritic units can be provided with different threshold voltage or current, respectively; and the neurons on the nth layer neuron layer are connected to the m dendritic units of the neurons on the n+1th layer neuron layer; wherein N is an integer larger than 3, m is an integer larger than 1, n is an integer larger than 1 and less than N.
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公开(公告)号:US12170155B2
公开(公告)日:2024-12-17
申请号:US17747906
申请日:2022-05-18
Inventor: Jianshi Tang , Zhenxuan Zhao , Yuan Dai , Wangwei Lee , Zhengyou Zhang , Jian Yuan , Huaqiang Wu , He Qian , Bin Gao
Abstract: This application discloses a conductive paste, a preparation method thereof, and a preparation method of a conductive film using the conductive paste. The conductive paste comprises: a thermoplastic polyurethane, conductive particles, and an organic solvent, the thermoplastic polyurethane and the conductive particles being proportionally mixed in the organic solvent, and the thermoplastic polyurethane being dispersed in the form of particles among the conductive particles. A thermoplastic polyurethane elastomer is used as a binder, and the conductive particles are mixed in the organic solvent containing the thermoplastic polyurethane elastomer. The conductive particles ensure the conductivity of the conductive film prepared using the conductive paste. The thermoplastic polyurethane has strong adhesion ability, and is suitable for use on the surface of most substrates, to form a conductive film with good adhesion and no cracking.
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公开(公告)号:US12079708B2
公开(公告)日:2024-09-03
申请号:US17049348
申请日:2020-01-10
Applicant: TSINGHUA UNIVERSITY
Inventor: Huaqiang Wu , Peng Yao , Bin Gao , He Qian
CPC classification number: G06N3/063 , G06F9/30036 , G06F9/345 , G06F9/3877
Abstract: Disclosed are a parallel acceleration method for a memristor-based neural network, a parallel acceleration processor based on a memristor-based neural network and a parallel acceleration device based on a memristor-based neural network. The neural network includes a plurality of functional layers sequentially provided, wherein the plurality of functional layers include a first functional layer and a second functional layer following the first functional layer, the first functional layer includes a plurality of first memristor arrays in parallel, and the plurality of first memristor arrays are configured to execute an operation of the first functional layer in parallel and to output a result of the operation to the second functional layer. The parallel acceleration method includes: executing the operation of the first functional layer in parallel via the plurality of first memristor arrays and outputting the result of the operation to the second functional layer.
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公开(公告)号:US11803360B2
公开(公告)日:2023-10-31
申请号:US17517096
申请日:2021-11-02
Applicant: TSINGHUA UNIVERSITY
Inventor: Huaqiang Wu , Ruihua Yu , Yilong Guo , Jianshi Tang , Bin Gao , He Qian
Abstract: A compilation method, a compilation apparatus suitable for an In-Memory Computing apparatus, a computing device and a storage medium. The compilation method includes: acquiring calculation information of an algorithm to be compiled; converting the algorithm to be compiled into the first intermediate representation according to the calculation information; mapping the first intermediate representation to the second intermediate representation; and compiling the algorithm to be compiled into instruction information recognized by the In-Memory Computing apparatus according to the hardware information, to make the In-Memory Computing apparatus execute the instruction information. The compilation method may compile the calculation information into instructions that may be directly executed by the In-Memory Computing apparatus, so as to realize the effect of accelerating the operations of various algorithms by using the In-Memory Computing apparatus.
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公开(公告)号:US11574199B2
公开(公告)日:2023-02-07
申请号:US16699727
申请日:2019-12-01
Applicant: Tsinghua University
Inventor: Huaqiang Wu , Bin Gao , Yudeng Lin , He Qian
Abstract: A generative adversarial network device and a training method thereof. The generative adversarial network device includes a generator and a discriminator. The generator is configured to generate a first sample according to an input data; the discriminator is coupled to the generator, and is configured to receive the first sample and be trained based on the first sample; the generator includes a first memristor array serving as a first weight array. The generative adversarial network device can omit a process of adding noise to fake samples generated by the generator, thereby saving training time, reducing resource consumption and improving training speed of the generative adversarial network.
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公开(公告)号:US09659733B2
公开(公告)日:2017-05-23
申请号:US14740359
申请日:2015-06-16
Applicant: Tsinghua University
Inventor: Huaqiang Wu , Shuoguo Yuan , Han Li , He Qian
IPC: C23C16/30 , H01J1/304 , H01J9/02 , C23C16/448 , C23C16/455
CPC classification number: H01J1/304 , C23C16/305 , C23C16/4488 , C23C16/45523 , H01J9/025 , H01J2201/30449
Abstract: Method for preparing a molybdenum disulfide film used in a field emission device, including: providing a sulfur vapor; blowing the sulfur vapor into a reaction chamber having a substrate and MoO3 powder to generate a gaseous MoOx; feeding the sulfur vapor into the reaction chamber sequentially, heating the reaction chamber to a predetermined reaction temperature and maintaining for a predetermined reaction time, and then cooling the reaction chamber to a room temperature and maintaining for a second reaction time to form a molybdenum disulfide film on the surface of the substrate, in which the molybdenum disulfide film grows horizontally and then grows vertically. The method according to the present disclosure is simple and easy, and the field emission property of the MoS2 film obtained is good.
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