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    METHOD OF FABRICATING SUSPENDED BEAM IN A MEMS PROCESS
    26.
    发明申请
    METHOD OF FABRICATING SUSPENDED BEAM IN A MEMS PROCESS 审中-公开
    在MEMS工艺中制造悬挂梁的方法

    公开(公告)号：WO2007041748A1

    公开(公告)日：2007-04-19

    申请号：PCT/AU2005/001565

    申请日：2005-10-10

    Applicant: SILVERBROOK RESEARCH PTY LTD ,  SILVERBROOK, Kia

    Inventor： SILVERBROOK, Kia

    IPC: B81C1/00 ,  B41J2/05 ,  B41J2/16

    CPC classification number: B41J2/1404 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14403 ,  B41J2002/14475 ,  B41J2202/11 ,  B81B2201/032 ,  B81B2201/052 ,  B81B2203/0109 ,  B81C1/00611 ,  B81C2201/0108 ,  B81C2201/0126

    Abstract: A method of forming a suspended beam in a MEMS process is disclosed. In the process a pit (8) is etched into a substrate (5). Sacrificial material (10) is deposited in the pit (8) and on the surrounding substrate surface. The sacrificial material (10) is then removed from the surrounding substrate surface and from the periphery of the pit (8) so that there is a gap between the sacrificial material and at least two sidewalls of the pit. The sacrificial material is then heated so that it reftows such that the remaining sacrificial material contacts the sidewalls of the pit. Material for the beam (12), which is typically a metal, is then deposited on the substrate surface and the reflowed sacrificial material, and the sacrificial material is then removed to form the suspended beam. The beam could be used as the heating element in an inkjet printer.

    Abstract translation: 公开了一种在MEMS工艺中形成悬挂梁的方法。 在该过程中，凹坑（8）被蚀刻到衬底（5）中。 牺牲材料（10）沉积在凹坑（8）中和周围的基底表面上。 然后将牺牲材料（10）从周围的衬底表面和凹坑（8）的周边移除，使得在牺牲材料和凹坑的至少两个侧壁之间存在间隙。 然后将牺牲材料加热，使得其牺牲使得剩余的牺牲材料接触凹坑的侧壁。 然后将通常为金属的梁（12）的材料沉积在衬底表面和回流牺牲材料上，然后去除牺牲材料以形成悬挂梁。 该光束可用作喷墨打印机中的加热元件。

    Fabrication of silicon structures by single side, multiple step etching process
    29.
    发明公开
    Fabrication of silicon structures by single side, multiple step etching process 失效
    Herstellung von Siliciumstrukturen durch einseitigen Mehrschritt-Ätzprozess。

    公开(公告)号：EP0359417A2

    公开(公告)日：1990-03-21

    申请号：EP89308476.4

    申请日：1989-08-22

    Applicant: XEROX CORPORATION

    Inventor： Hawkins, William G.

    IPC: H01L21/308 ,  B41J3/04

    CPC classification number: B81C1/00126 ,  B41J2/1601 ,  B41J2/1626 ,  B41J2/1631 ,  B81B2201/052 ,  B81B2203/0338 ,  G02B6/3644 ,  G02B6/3692 ,  H01L21/30608 ,  H01L21/3081 ,  H01L21/3085

    Abstract: Three dimensional silicon structures are fabricated from {100} silicon wafers by a single side, multiple step ODE etching process. All etching masks (26, 28) are formed one on top of the other prior to the initiation of etching, with the coarsest mask (28) formed last and used first. Once the coarse anisotropic etching is completed, the coarse mask is removed and the finer anisotropic etching is done. The three dimensional structure may be a thermal ink jet channel plate, in which case the etching process is a two-step process in which the coarse etching step provides the ink reservoir (30) and the fine etching step provides the ink channels (32).

    Abstract translation: 通过单面，多步ODE蚀刻工艺由{100}硅晶片制造三维硅结构。 所有蚀刻掩模（26,28）在蚀刻开始之前一个在另一个之上形成，最粗糙的掩模（28）最后形成并首先被使用。 一旦粗大的各向异性蚀刻完成，粗糙掩模被去除，并且进行更精细的各向异性蚀刻。 三维结构可以是热喷墨通道板，在这种情况下，蚀刻工艺是两步法，其中粗蚀刻步骤提供墨储存器（30），并且精细蚀刻步骤提供墨通道（32） 。

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