METHOD FOR REDUCING LEACHING IN METAL-COATED MEMS
    21.
    发明申请
    METHOD FOR REDUCING LEACHING IN METAL-COATED MEMS 审中-公开
    用于减少金属涂层MEMS中浸出的方法

    公开(公告)号:WO2005035144A1

    公开(公告)日:2005-04-21

    申请号:PCT/US2003/028505

    申请日:2003-09-09

    CPC classification number: B81C1/00476 B81B2201/042 B81C2201/117

    Abstract: A method is provided for preventing dopant leaching from a doped structural film during fabrication of a microelectromechanical system. A microstructure that includes the doped structural film, sacrificial material, and metallic material is produced with a combination of deposition, patterning, and etching techniques. The sacrificial material is dissolved with a release solution that has a substance destructive to the sacrificial material. This substance also acts as an electrolyte, forming a galvanic cell with the doped structural film and metallic material acting as electrodes. The effects of the galvanic cell are suppressed by including a nonionic detergent mixed in the release solution.

    Abstract translation: 提供了一种在微电子机械系统的制造期间防止掺杂的结构膜的掺杂剂浸出的方法。 包括掺杂的结构膜,牺牲材料和金属材料的微结构通过沉积,图案化和蚀刻技术的组合来生产。 牺牲材料用具有对牺牲材料具有破坏性的物质的释放溶液溶解。 该物质还用作电解质,形成具有掺杂结构膜和金属材料作为电极的原电池。 通过包括混合在脱模溶液中的非离子洗涤剂来抑制原电池的影响。

    表面処理方法、半導体装置、半導体装置の製造方法、および処理装置
    22.
    发明申请
    表面処理方法、半導体装置、半導体装置の製造方法、および処理装置 审中-公开
    表面处理方法,半导体器件,制造半导体器件的方法和处理装置

    公开(公告)号:WO2003065434A1

    公开(公告)日:2003-08-07

    申请号:PCT/JP2003/000938

    申请日:2003-01-30

    Inventor: 嵯峨 幸一郎

    Abstract: A method of surface treatment in which a surface having a structure formed thereon is treated with a supercritical fluid (4), characterized by adding ammonium hydroxide, an alkanolamine, a fluoroamine, hydrofluoric acid, or the like as a dissolution aid (5) to the supercritical fluid (4). A surface-active substance (6) may be added to the supercritical fluid (4) together with the dissolution aid (5). The surface-active substance (6) may comprise a polar solvent. The method enables residues to be removed without fail by treatment with the supercritical fluid as the only treatment.

    Abstract translation: 一种表面处理方法,其中形成有结构的表面的表面用超临界流体(4)处理,其特征在于将氢氧化铵,链烷醇胺,氟胺,氢氟酸等作为溶解助剂(5)加入到 超临界流体(4)。 表面活性物质(6)可与溶解助剂(5)一起加入到超临界流体(4)中。 表面活性物质(6)可以包含极性溶剂。 该方法通过用超临界流体处理作为唯一的处理使残留物不经故障地除去。

    Process for producing structural body and etchant for silicon oxide film
    23.
    发明授权
    Process for producing structural body and etchant for silicon oxide film 有权
    用于生产氧化硅膜结构体和蚀刻剂的方法

    公开(公告)号:US07670496B2

    公开(公告)日:2010-03-02

    申请号:US11011111

    申请日:2004-12-15

    CPC classification number: B81C1/00849 B81C2201/117

    Abstract: A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.

    Abstract translation: 一种结构体,包括通过空气间隙形成在基底上的结构层,其中结构层用作微型可移动元件,是通过包括依次形成由硅制成的牺牲层的成膜步骤的方法制造的 氧化膜和基板上的结构层,气隙形成步骤,通过用处理流体蚀刻去除牺牲层,以在基板和结构层之间形成气隙,以及清洁步骤。 通过使用含有氟化合物,水溶性有机溶剂和水作为处理液的超临界二氧化碳流体,在短时间内用少量的处理流体去除牺牲层,而不会对结构造成任何损害 身体。

    Method for Depositing an Anti-Adhesion Layer
    24.
    发明申请
    Method for Depositing an Anti-Adhesion Layer 审中-公开
    沉积抗粘附层的方法

    公开(公告)号:US20090004388A1

    公开(公告)日:2009-01-01

    申请号:US11659563

    申请日:2005-06-21

    CPC classification number: B81C1/0096 B81B3/0005 B81C2201/112 B81C2201/117

    Abstract: A method for depositing an anti-adhesion layer onto a surface of micromechanical structures on a substrate. The material or precursor material to be deposited being delivered to the structures in a dissolution and transport medium. A supercritical CO2 fluid is present as the dissolution and transport medium. Deposition of the material or precursor material is brought about by a change in the physical state of the CO2 fluid or by a surface reaction between the surface and the precursor material. The method makes possible subsequent coating of the micromechanical structures in a cavity after encapsulation thereof, the material to be deposited being delivered via access channels or perforation holes.

    Abstract translation: 一种在衬底上的微机械结构的表面上沉积抗粘附层的方法。 要沉积的材料或前体材料被输送到溶解和运输介质中的结构。 存在超临界CO2流体作为溶解和运输介质。 材料或前体材料的沉积是通过CO 2流体的物理状态的变化或表面与前体材料之间的表面反应引起的。 该方法使得随后在其封装之后在空腔中涂覆微机械结构,待沉积的材料经由接入通道或穿孔而被输送。

    Method for stripping sacrificial layer in MEMS assembly
    25.
    发明申请
    Method for stripping sacrificial layer in MEMS assembly 有权
    MEMS组装中剥离牺牲层的方法

    公开(公告)号:US20040248417A1

    公开(公告)日:2004-12-09

    申请号:US10454198

    申请日:2003-06-04

    Inventor: Joshua J. Malone

    Abstract: The present invention provides methods of manufacturing a MEMS assembly. In one embodiment, the method includes mounting a MEMS device, such as a MEMS mirror array, on an assembly substrate, where the MEMS device has a sacrificial layer over components formed therein. The method also includes coupling an assembly lid to the assembly substrate and over the MEMS device to create an interior of the MEMS assembly housing the MEMS device, whereby the coupling maintains an opening to the interior of the MEMS assembly. Furthermore, the method includes removing the sacrificial layer through the opening. A MEMS assembly constructed according to a process of the present invention is also disclosed.

    Abstract translation: 本发明提供了制造MEMS组件的方法。 在一个实施例中,该方法包括将MEMS器件(例如MEMS反射镜阵列)安装在组装衬底上,其中MEMS器件在其中形成的部件上具有牺牲层。 该方法还包括将组装盖耦合到组装衬底和MEMS器件上以形成容纳MEMS器件的MEMS组件的内部,由此耦合保持到MEMS组件的内部的开口。 此外,该方法包括通过开口去除牺牲层。 还公开了根据本发明的方法构造的MEMS组件。

    Method of undercutting micro-mechanical device with super-critical carbon dioxide
    26.
    发明授权
    Method of undercutting micro-mechanical device with super-critical carbon dioxide 有权
    用超临界二氧化碳切割微机械装置的方法

    公开(公告)号:US06737225B2

    公开(公告)日:2004-05-18

    申请号:US10034647

    申请日:2001-12-28

    Abstract: A method for removing sacrificial layers during the process of fabricating micro-mechanical devices with a solution of super-critical carbon dioxide. A mixture of super-critical carbon dioxide with other solvents, co-solvents and surfactants is used during the process to remove sacrificial layers. The disclosed method has many advantages over the prior art, including a reduction of capillary forces that can damage the free-standing micro-mechanical superstructures, an absence of plasma induced damage caused by ashing operations, and a reduction in the use of environmentally sensitive chemicals. Another advantage of the disclosed process is that the swelling of the photoresist layers is minimized. The disclosed method may be used to remove sacrificial layers that were deposited during the process of fabricating micro-mechanical devices. The method is also effective to remove a protective recoat layer that is deposited over a micro-mechanical device after it has been fabricated.

    Abstract translation: 在用超临界二氧化碳溶液制造微机械装置的过程中去除牺牲层的方法。 在该过程中,使用超临界二氧化碳与其它溶剂,共溶剂和表面活性剂的混合物来除去牺牲层。 所公开的方法与现有技术相比具有许多优点,包括可以减少可能损害自立微机械上层建筑的毛细管力的减少,灰化作用引起的等离子体引起的损伤的缺乏以及对环境敏感化学品的使用的减少 。 所公开的方法的另一个优点是光致抗蚀剂层的溶胀最小化。 所公开的方法可用于去除在制造微机械装置的过程中沉积的牺牲层。 该方法也有效地去除了在其被制造之后在微机械装置上沉积的保护性覆层。

    Method for reducing leaching in metal-coated MEMS
    27.
    发明申请
    Method for reducing leaching in metal-coated MEMS 失效
    金属涂层MEMS中减少浸出的方法

    公开(公告)号:US20040022931A1

    公开(公告)日:2004-02-05

    申请号:US10632698

    申请日:2003-08-01

    CPC classification number: B81C1/00476 B81B2201/042 B81C2201/117

    Abstract: A method is provided for preventing dopant leaching from a doped structural film during fabrication of a microelectromechanical system. A microstructure that includes the doped structural film, sacrificial material, and metallic material is produced with a combination of deposition, patterning, and etching techniques. The sacrificial material is dissolved with a release solution that has a substance destructive to the sacrificial material. This substance also acts as an electrolyte, forming a galvanic cell with the doped structural film and metallic material acting as electrodes. The effects of the galvanic cell are suppressed by including a nonionic detergent mixed in the release solution.

    Abstract translation: 提供了一种在微电子机械系统的制造期间防止掺杂的结构膜的掺杂剂浸出的方法。 包括掺杂的结构膜,牺牲材料和金属材料的微结构通过沉积,图案化和蚀刻技术的组合来生产。 牺牲材料用具有对牺牲材料具有破坏性的物质的释放溶液溶解。 该物质还用作电解质,形成具有掺杂结构膜和金属材料作为电极的原电池。 通过包括混合在脱模溶液中的非离子洗涤剂来抑制原电池的影响。

    Method for removing a sacrificial material with a compressed fluid
    28.
    发明申请
    Method for removing a sacrificial material with a compressed fluid 有权
    用压缩流体去除牺牲材料的方法

    公开(公告)号:US20030047533A1

    公开(公告)日:2003-03-13

    申请号:US10167272

    申请日:2002-06-10

    Abstract: A method comprises depositing an organic material on a substrate; depositing additional material different from the organic material after depositing the organic material; and removing the organic material with a compressed fluid. Also disclosed is a method comprising: providing an organic layer on a substrate; after providing the organic layer, providing one or more layers of a material different than the organic material of the organic layer; removing the organic layer with a compressed fluid; and providing an anti-stiction agent with a compressed fluid to material remaining after removal of the organic layer.

    Abstract translation: 一种方法包括在衬底上沉积有机材料; 在沉积有机材料之后沉积与有机材料不同的附加材料; 并用压缩流体除去有机材料。 还公开了一种方法,包括:在衬底上提供有机层; 在提供有机层之后,提供与有机层的有机材料不同的一层或多层材料; 用压缩流体去除有机层; 并且在去除有机层之后向剩余的材料提供具有压缩流体的抗静电剂。

    Method of cleaning and treating a semiconductor device including a
micromechanical device
    29.
    发明授权
    Method of cleaning and treating a semiconductor device including a micromechanical device 失效
    清洁和处理包括微机械装置的半导体器件的方法

    公开(公告)号:US6024801A

    公开(公告)日:2000-02-15

    申请号:US761579

    申请日:1996-12-09

    Abstract: A method of cleaning and treating a device, including those of the micromechanical (10) and semiconductor type. The surface of a device, such as the landing electrode (22) of a digital micromirror device (10), is first cleaned with a supercritical fluid (SCF) in a chamber (50) to remove soluble chemical compounds, and then maintained in the SCF chamber until and during the subsequent passivation step. Passivants including PFDA and PFPE are suitable for the present invention. By maintaining the device in the SCF chamber, and without exposing the device to, for instance, the ambient of a clean room, organic and inorganic contaminants cannot be deposited upon the cleaned surface prior to the passivation step. The present invention derives technical advantages by providing an improved passivated surface that is suited to extend the useful operation life of devices, including those of the micromechanical type, reducing stiction forces between contacting elements such as a mirror and its landing electrode. The present invention is also suitable for cleaning and passivating other surfaces including a surface of semiconductor wafers, and the surface of a hard disk memory drive.

    Abstract translation: 一种清洁和处理包括微机械(10)和半导体类型的装置的方法。 首先在室(50)中用超临界流体(SCF)清洁诸如数字微镜装置(10)的着陆电极(22)的装置的表面以除去可溶性化合物,然后保持在 SCF室直到和之后的钝化步骤。 包括PFDA和PFPE的钝化剂适用于本发明。 通过将装置保持在SCF室中,并且在不将装置暴露于例如洁净室的环境的情况下,在钝化步骤之前,有机和无机污染物不能沉积在清洁的表面上。 本发明通过提供一种改进的钝化表面来提供技术优点,所述钝化表面适于延长包括微机械型的装置的有用使用寿命,从而降低诸如反射镜和其着陆电极的接触元件之间的静摩擦力。 本发明也适用于清洁和钝化包括半导体晶片的表面的其它表面以及硬盘存储器驱动器的表面。

    Method for reducing leaching in metal-coated MEMS
    30.
    发明授权
    Method for reducing leaching in metal-coated MEMS 失效
    金属涂层MEMS中减少浸出的方法

    公开(公告)号:US06939574B2

    公开(公告)日:2005-09-06

    申请号:US10632698

    申请日:2003-08-01

    CPC classification number: B81C1/00476 B81B2201/042 B81C2201/117

    Abstract: A method is provided for preventing dopant leaching from a doped structural film during fabrication of a microelectromechanical system. A microstructure that includes the doped structural film, sacrificial material, and metallic material is produced with a combination of deposition, patterning, and etching techniques. The sacrificial material is dissolved with a release solution that has a substance destructive to the sacrificial material. This substance also acts as an electrolyte, forming a galvanic cell with the doped structural film and metallic material acting as electrodes. The effects of the galvanic cell are suppressed by including a nonionic detergent mixed in the release solution.

    Abstract translation: 提供了一种在微电子机械系统的制造期间防止掺杂的结构膜的掺杂剂浸出的方法。 包括掺杂的结构膜,牺牲材料和金属材料的微结构通过沉积,图案化和蚀刻技术的组合来生产。 牺牲材料用具有对牺牲材料具有破坏性的物质的释放溶液溶解。 该物质还用作电解质,形成具有掺杂结构膜和金属材料作为电极的原电池。 通过包括混合在脱模溶液中的非离子洗涤剂来抑制原电池的影响。

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